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Class Information
Number: 257/E29.009
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo) > With field relief electrode (field plate) (epo)
Description: This subclass is indented under subclass E29.008. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B2.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.01 With at least two field relief electrodes used in combination and not electrically interconnected (epo) 158


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
6388286 Power semiconductor devices having trench-based gate electrodes and field plates May. 14, 2002
6384453 High withstand voltage diode and method for manufacturing same May. 7, 2002
6376890 High-voltage edge termination for planar structures Apr. 23, 2002
6362505 MOS field-effect transistor with auxiliary electrode Mar. 26, 2002
6359308 Cellular trench-gate field-effect transistors Mar. 19, 2002
6346451 Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode Feb. 12, 2002
6313489 Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a device Nov. 6, 2001
6309929 Method of forming trench MOS device and termination structure Oct. 30, 2001
6310378 High voltage thin film transistor with improved on-state characteristics and method for making same Oct. 30, 2001
6306711 Method of fabricating a high-voltage lateral double diffused metal oxide semiconductor Oct. 23, 2001
6281547 Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask Aug. 28, 2001
6258674 High voltage field effect transistor and method of fabricating the same Jul. 10, 2001
6252279 DMOS transistor having a high reliability and a method for fabricating the same Jun. 26, 2001
6249023 Gated semiconductor device Jun. 19, 2001
6246101 Isolation structure and semiconductor device including the isolation structure Jun. 12, 2001
6239475 Vertical bipolar transistor having a field shield between the metallic interconnecting layer and the insulation oxide May. 29, 2001
6236100 Semiconductor with high-voltage components and low-voltage components on a shared die May. 22, 2001
6218712 Semiconductor device and method of manufacturing same Apr. 17, 2001
6218217 Semiconductor device having high breakdown voltage and method of manufacturing the same Apr. 17, 2001
6215152 MOSFET having self-aligned gate and buried shield and method of making same Apr. 10, 2001
6215167 Power semiconductor device employing field plate and manufacturing method thereof Apr. 10, 2001
6197640 Semiconductor component and method of manufacture Mar. 6, 2001
6180981 Termination structure for semiconductor devices and process for manufacture thereof Jan. 30, 2001
6172400 MOS transistor with shield coplanar with gate electrode Jan. 9, 2001
6160290 Reduced surface field device having an extended field plate and method for forming the same Dec. 12, 2000
6150675 Semiconductor component with a control electrode for modulating the conductivity of a channel area by means of a magnetoresistor structure Nov. 21, 2000
6150694 Silicon-on-insulator insulated gate bipolar transistor Nov. 21, 2000
6150697 Semiconductor apparatus having high withstand voltage Nov. 21, 2000
6144070 High breakdown-voltage transistor with electrostatic discharge protection Nov. 7, 2000
6118152 Semiconductor device and method of manufacturing the same Sep. 12, 2000
6111290 Semiconductor device having high breakdown voltage and method of manufacturing the same Aug. 29, 2000
6100571 Fet having non-overlapping field control electrode between gate and drain Aug. 8, 2000
6093588 Process for fabricating a high voltage MOSFET Jul. 25, 2000
6077753 Method for manufacturing vertical bipolar transistor having a field shield between an interconnecting layer and the field oxide Jun. 20, 2000
6069386 Semiconductor device May. 30, 2000
6069043 Method of making punch-through field effect transistor May. 30, 2000
6049109 Silicon on Insulator semiconductor device with increased withstand voltage Apr. 11, 2000
6033948 Method of making high voltage metal oxide silicon field effect transistor Mar. 7, 2000
6028337 Lateral thin-film silicon-on-insulator (SOI) device having lateral depletion means for depleting a portion of drift region Feb. 22, 2000
6025230 High speed MOSFET power device with enhanced ruggedness fabricated by simplified processes Feb. 15, 2000
6020617 Lateral MOS transistor with weakly doped drain extension Feb. 1, 2000
5998833 Power semiconductor devices having improved high frequency switching and breakdown characteristics Dec. 7, 1999
5977606 Dielectric isolated high voltage semiconductor device Nov. 2, 1999
5976942 Method of manufacturing a high-voltage semiconductor device Nov. 2, 1999
5973360 Field effect-controllable semiconductor component Oct. 26, 1999
5969387 Lateral thin-film SOI devices with graded top oxide and graded drift region Oct. 19, 1999
5959342 Semiconductor device having a high voltage termination improvement Sep. 28, 1999
5952705 Monolithically integrated planar semi-conductor arrangement with temperature compensation Sep. 14, 1999
5930630 Method for device ruggedness improvement and on-resistance reduction for power MOSFET achieved by novel source contact structure Jul. 27, 1999
5923979 Planar DMOS transistor fabricated by a three mask process Jul. 13, 1999

1 2 3 4 5 6 7 8










 
 
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