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Class Information
Number: 257/E29.009
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo) > With field relief electrode (field plate) (epo)
Description: This subclass is indented under subclass E29.008. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B2.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.01 With at least two field relief electrodes used in combination and not electrically interconnected (epo) 158

Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8669639 Semiconductor element, manufacturing method thereof and operating method thereof Mar. 11, 2014
8648439 Semiconductor device and manufacturing method of semiconductor device Feb. 11, 2014
8629513 HV interconnection solution using floating conductors Jan. 14, 2014
8629505 Semiconductor device Jan. 14, 2014
8592867 Wide bandgap HEMTS with source connected field plates Nov. 26, 2013
8581341 Power MOSFET with embedded recessed field plate and methods of fabrication Nov. 12, 2013
8558342 Semiconductor device Oct. 15, 2013
8552496 High-voltage vertical transistor with edge termination structure Oct. 8, 2013
8482095 High-voltage transistor having shielding gate Jul. 9, 2013
8466492 Semiconductor device with edge termination structure Jun. 18, 2013
8432018 Semiconductor device and manufacturing method of semiconductor device Apr. 30, 2013
8357985 Bipolar transistor with guard region Jan. 22, 2013
8314471 Trench devices having improved breakdown voltages and method for manufacturing same Nov. 20, 2012
8268693 Method for fabricating a radiation hardened device Sep. 18, 2012
8269282 Semiconductor component and method for producing a semiconductor component Sep. 18, 2012
8258573 Power semiconductor component with plate capacitor structure and edge termination Sep. 4, 2012
8227868 Semiconductor device having a plurality of spaced-apart field plates formed on a field insulating film Jul. 24, 2012
8169005 High voltage GaN transistors May. 1, 2012
8143679 Termination structure for power devices Mar. 27, 2012
8110888 Edge termination for high voltage semiconductor device Feb. 7, 2012
8004022 Field effect transistor Aug. 23, 2011
7994006 Manufacturing method of semiconductor device Aug. 9, 2011
7915644 Wide bandgap HEMTs with source connected field plates Mar. 29, 2011
7893500 High voltage GaN transistors Feb. 22, 2011
7872300 Power semiconductor component with plate capacitor structure Jan. 18, 2011
7868418 Semiconductor device Jan. 11, 2011
7851886 Semiconductor device and manufacturing method of semiconductor device Dec. 14, 2010
7825466 Super-junction semiconductor element and method of fabricating the same Nov. 2, 2010
7800176 Electronic circuit for controlling a power field effect transistor Sep. 21, 2010
7791132 High-voltage vertical transistor with a multi-gradient drain doping profile Sep. 7, 2010
7786533 High-voltage vertical transistor with edge termination structure Aug. 31, 2010
7777292 Semiconductor device Aug. 17, 2010
7772675 Semiconductor device and manufacturing method of semiconductor device Aug. 10, 2010
7772669 Semiconductor device having an improved structure for high withstand voltage Aug. 10, 2010
7737524 Lateral thin-film SOI device having a field plate with isolated metallic regions Jun. 15, 2010
7696535 Gallium nitride high electron mobility transistor having inner field-plate for high power applications Apr. 13, 2010
7692263 High voltage GaN transistors Apr. 6, 2010
7560787 Trench field plate termination for power devices Jul. 14, 2009
7501669 Wide bandgap transistor devices with field plates Mar. 10, 2009
7473623 Providing stress uniformity in a semiconductor device Jan. 6, 2009
7397083 Trench fet with self aligned source and contact Jul. 8, 2008
7372103 MOS field plate trench transistor device May. 13, 2008
7335944 High-voltage vertical transistor with a multi-gradient drain doping profile Feb. 26, 2008
7327007 Semiconductor device with high breakdown voltage Feb. 5, 2008
7304331 Nitride semiconductor device such as transverse power FET for high frequency signal amplification or power control Dec. 4, 2007
7304363 Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device Dec. 4, 2007
7221011 High-voltage vertical transistor with a multi-gradient drain doping profile May. 22, 2007
7122875 Semiconductor device Oct. 17, 2006
7119415 Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof Oct. 10, 2006
7109562 High voltage laterally double-diffused metal oxide semiconductor Sep. 19, 2006

1 2 3 4 5 6 7 8

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