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Class Information
Number: 257/E29.008
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo)
Description: This subclass is indented under subclass E29.007. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.012 By doping profile or shape or arrangement of the pn junction, or with supplementary regions (e.g., guard ring, ldd, drift region) (epo) 343
257/E29.009 With field relief electrode (field plate) (epo) 363
257/E29.015 With insulating layer characterized by dielectric or electrostatic property (e.g., including fixed charge or semi-insulating surface layer) (epo) 126


Patents under this class:

Patent Number Title Of Patent Date Issued
8691707 Voltage switchable dielectric for die-level electrostatic discharge (ESD) protection Apr. 8, 2014
8633562 Voltage switchable dielectric for die-level electrostatic discharge (ESD) protection Jan. 21, 2014
8618557 Wide-band-gap reverse-blocking MOS-type semiconductor device Dec. 31, 2013
8476698 Corner layout for superjunction device Jul. 2, 2013
8471337 Integrated circuit Jun. 25, 2013
8344457 Insulated-gate semiconductor device with protection diode Jan. 1, 2013
8188521 Power semiconductor device May. 29, 2012
8188539 Field-effect semiconductor device and method of forming the same May. 29, 2012
8188540 High breakdown voltage double-gate semiconductor device May. 29, 2012
8134210 Master, pixel array substrate, electro-optical device and methods of manufacturing the same Mar. 13, 2012
8124981 Rugged semiconductor device architecture Feb. 28, 2012
8093676 Semiconductor component including an edge termination having a trench and method for producing Jan. 10, 2012
8013393 Electrostatic discharge protection devices Sep. 6, 2011
7915676 Integrated circuit Mar. 29, 2011
7898035 Semiconductor device Mar. 1, 2011
7893497 Semiconductor device Feb. 22, 2011
7863645 High breakdown voltage double-gate semiconductor device Jan. 4, 2011
7833857 ESD protecting circuit and manufacturing method thereof Nov. 16, 2010
7825431 Reduced mask configuration for power MOSFETs with electrostatic discharge (ESD) circuit protection Nov. 2, 2010
7825474 Insulated-gate semiconductor device and PN junction diodes Nov. 2, 2010
7812333 Integrated circuit including resistivity changing material having a planarized surface Oct. 12, 2010
7795684 Active device array substrate Sep. 14, 2010
7750407 Strapping contact for charge protection Jul. 6, 2010
7709898 Semiconductor protection circuit, method for fabricating the same and method for operating semiconductor protection circuit May. 4, 2010
7696605 Semiconductor component comprising a temporary field stopping area, and method for the production thereof Apr. 13, 2010
7692240 Insulated gate semiconductor device Apr. 6, 2010
7667254 Semiconductor integrated circuit device Feb. 23, 2010
7327007 Semiconductor device with high breakdown voltage Feb. 5, 2008
6583487 Power component bearing interconnections Jun. 24, 2003
6326271 Asymmetric MOS technology power device Dec. 4, 2001
6222232 Asymmetric MOS technology power device Apr. 24, 2001
6084263 Power device having high breakdown voltage and method of manufacturing the same Jul. 4, 2000
6054752 Semiconductor device Apr. 25, 2000
5977606 Dielectric isolated high voltage semiconductor device Nov. 2, 1999
5900651 High-withstand-voltage semiconductor device May. 4, 1999
5543655 Transistor structure for improved base-collector junction characteristics Aug. 6, 1996
5463243 Dielectric isolated high voltage semiconductor device Oct. 31, 1995
4805004 Semiconductor device with a planar junction and self-passivating termination Feb. 14, 1989
4412242 Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions Oct. 25, 1983
4302763 Semiconductor device Nov. 24, 1981
3979629 Semiconductor with surface insulator having immobile charges Sep. 7, 1976
3956025 Semiconductor devices having surface state control and method of manufacture May. 11, 1976











 
 
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