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Class Information
Number: 257/E29.007
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo)
Description: This subclass is indented under subclass E29/006. This subclass is substantially the same in scope as ECLA classification H01L29/06B2.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.008 For controlling breakdown voltage of reverse biased devices (epo) 42
257/E29.016 For preventing surface leakage due to surface inversion layer (e.g., channel stop) (epo) 172

Patents under this class:

Patent Number Title Of Patent Date Issued
8691707 Voltage switchable dielectric for die-level electrostatic discharge (ESD) protection Apr. 8, 2014
8692324 Semiconductor devices having charge balanced structure Apr. 8, 2014
8633562 Voltage switchable dielectric for die-level electrostatic discharge (ESD) protection Jan. 21, 2014
8592901 Metal oxide semiconductor field transistor and method of fabricating the same Nov. 26, 2013
8492753 Directionally recrystallized graphene growth substrates Jul. 23, 2013
8487355 Structure and method for compact long-channel FETs Jul. 16, 2013
8471329 Tunnel FET and methods for forming the same Jun. 25, 2013
8432015 Semiconductor device and wire bonding method Apr. 30, 2013
8405146 Component arrangement including a MOS transistor having a field electrode Mar. 26, 2013
8349711 Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement Jan. 8, 2013
8330254 Semiconductor device Dec. 11, 2012
8114785 Electrical passivation of silicon-containing surfaces using organic layers Feb. 14, 2012
8093676 Semiconductor component including an edge termination having a trench and method for producing Jan. 10, 2012
8089138 Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device Jan. 3, 2012
7944021 Semiconductor device with suppressed hump characteristic May. 17, 2011
7915705 SiC semiconductor device having outer periphery structure Mar. 29, 2011
7898056 Seal ring for reducing noise coupling within a system-on-a-chip (SoC) Mar. 1, 2011
7772677 Semiconductor device and method of forming the same having a junction termination structure with a beveled sidewall Aug. 10, 2010
7750428 Semiconductor device and method for producing it Jul. 6, 2010
7745908 Semiconductor component containing compound of aluminum, gallium, indium, arsenic, and antimony has mesa structure whose sides have passivation layer of compound of aluminum, gallium, arsenic, Jun. 29, 2010
7622787 Process for high voltage superjunction termination Nov. 24, 2009
7564107 Power semiconductor device including a terminal structure Jul. 21, 2009
7399999 Semiconductor device Jul. 15, 2008
7307320 Differential mechanical stress-producing regions for integrated circuit field effect transistors Dec. 11, 2007
7129559 High voltage semiconductor device utilizing a deep trench structure Oct. 31, 2006
6617647 Insulated gate semiconductor device and method of manufacturing the same Sep. 9, 2003
6218714 Insulated gate semiconductor device and method of manufacturing the same Apr. 17, 2001
4706377 Passivation of gallium arsenide by nitrogen implantation Nov. 17, 1987
4130828 Triac structure having improved triggering sensitivity with single groove extending from gate region Dec. 19, 1978
4126931 Method of passivating high-voltage power semiconductor devices Nov. 28, 1978
4122483 Semiconductor device having reduced leakage current Oct. 24, 1978
4104786 Method of manufacture of a semiconductor device Aug. 8, 1978
4094733 Method of neutralizing local defects in charge couple device structures Jun. 13, 1978
4063272 Semiconductor device and method of manufacture thereof Dec. 13, 1977
4021837 Symmetrical semiconductor switch having carrier lifetime degrading structure May. 3, 1977

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