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Class Information
Number: 257/E29.006
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo)
Description: This subclass is indented under subclass E29.005. This subclass is substantially the same in scope as ECLA classification H01L29/06B.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.018 Comprising internal isolation within devices or components (epo) 66
257/E29.007 For controlling surface leakage or electric field concentration (epo) 35


Patents under this class:

Patent Number Title Of Patent Date Issued
8673754 Method of forming gate dielectric layer and method of fabricating semiconductor device Mar. 18, 2014
8633573 Strained semiconductor materials, devices and methods therefore Jan. 21, 2014
8624217 Planar phase-change memory cell with parallel electrical paths Jan. 7, 2014
8614478 Method for protecting a semiconductor device against degradation, a semiconductor device protected against hot charge carriers and a manufacturing method therefor Dec. 24, 2013
8531007 Semiconductor device and the method for manufacturing the same Sep. 10, 2013
8502191 Semiconductor device, manufacturing method therefor, and solar cell Aug. 6, 2013
8487355 Structure and method for compact long-channel FETs Jul. 16, 2013
8487413 Passivation film for electronic device and method of manufacturing the same Jul. 16, 2013
8435840 Fuse box guard rings including protrusions and methods of forming same May. 7, 2013
8426837 Resistive memory device and method of manufacturing the same Apr. 23, 2013
8357990 Semiconductor device Jan. 22, 2013
8343881 Silicon dioxide layer deposited with BDEAS Jan. 1, 2013
8247884 Semiconductor structure for fabricating a handle wafer contact in a trench insulated SOI disc Aug. 21, 2012
8237225 Semiconductor device for electrostatic discharge protection Aug. 7, 2012
8232593 Power semiconductor device Jul. 31, 2012
8143679 Termination structure for power devices Mar. 27, 2012
8093676 Semiconductor component including an edge termination having a trench and method for producing Jan. 10, 2012
7989029 Reduced porosity copper deposition Aug. 2, 2011
7968950 Semiconductor device having improved gate electrode placement and decreased area design Jun. 28, 2011
7948062 Semiconductor device and method for manufacturing semiconductor device May. 24, 2011
7923723 Thin-film transistor and display device using oxide semiconductor Apr. 12, 2011
7915705 SiC semiconductor device having outer periphery structure Mar. 29, 2011
7880201 Optical modulator using a serpentine dielectric layer between silicon layers Feb. 1, 2011
7863621 Thin film transistor Jan. 4, 2011
7859076 Edge termination for semiconductor device Dec. 28, 2010
RE41866 Semiconductor device and method of fabricating same Oct. 26, 2010
7772677 Semiconductor device and method of forming the same having a junction termination structure with a beveled sidewall Aug. 10, 2010
7745908 Semiconductor component containing compound of aluminum, gallium, indium, arsenic, and antimony has mesa structure whose sides have passivation layer of compound of aluminum, gallium, arsenic, Jun. 29, 2010
7714407 Semiconductor device and method of forming a semiconductor device May. 11, 2010
7582899 Semiconductor device having overlay measurement mark and method of fabricating the same Sep. 1, 2009
7560787 Trench field plate termination for power devices Jul. 14, 2009
7557394 High-voltage transistor fabrication with trench etching technique Jul. 7, 2009
7521759 Semiconductor device, method for manufacturing the same, and gate electrode structure Apr. 21, 2009
7459751 Insulated gate semiconductor device with small feedback capacitance and manufacturing method thereof Dec. 2, 2008
7420260 Power semiconductor device for suppressing substrate recirculation current and method of fabricating power semiconductor device Sep. 2, 2008
7375398 High voltage FET gate structure May. 20, 2008
7339210 Compound semiconductor switching circuit device Mar. 4, 2008
7064364 Thin film transistor and method for manufacturing the same Jun. 20, 2006
6762462 Structure of protection against noise Jul. 13, 2004
5801836 Depletion region stopper for PN junction in silicon carbide Sep. 1, 1998
5170229 Junction field effect transistors with injector region Dec. 8, 1992
4951100 Hot electron collector for a LDD transistor Aug. 21, 1990
4906921 Structure and process for testing integrated circuits permitting determination of the properties of layers Mar. 6, 1990
4117507 Diode formed in integrated-circuit structure Sep. 26, 1978
4054897 Semiconductor device with high frequency, high power output Oct. 18, 1977
3995301 Novel integratable Schottky Barrier structure and a method for the fabrication thereof Nov. 30, 1976











 
 
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