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Class Information
Number: 257/E29.005
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo)
Description: This subclass is indented under subclass E29.002. This subclass is substantially the same in scope as ECLA classification H01L29/06.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.006 Characterized by particular design considerations to control electrical field effect within device (epo) 46
257/E29.022 Characterized by shape of semiconductor body (epo) 335
257/E29.024 Characterized by shape, relative sizes or dispositions of semiconductor regions or junctions between regions (epo) 79
257/E29.029 With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) 20
257/E29.043 With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) 33

Patents under this class:
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Patent Number Title Of Patent Date Issued
8685774 Method for fabricating three-dimensional gallium nitride structures with planar surfaces Apr. 1, 2014
8680581 Method for producing group III nitride semiconductor and template substrate Mar. 25, 2014
8669544 High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign catalysis Mar. 11, 2014
8648328 Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces Feb. 11, 2014
8633570 Method for manufacturing SOI substrate and SOI substrate Jan. 21, 2014
8633561 Termination for a superjunction device Jan. 21, 2014
8618606 Semiconductor device Dec. 31, 2013
8618608 Lateral silicon controlled rectifier structure Dec. 31, 2013
8610125 Nanotube array light emitting diodes Dec. 17, 2013
8610104 Nanotube array injection lasers Dec. 17, 2013
8610105 Semiconductor electroluminescent device with a multiple-quantum well layer formed therein Dec. 17, 2013
8569098 Method for manufacturing photoelectric conversion device Oct. 29, 2013
8569836 Semiconductor device Oct. 29, 2013
8552525 Semiconductor structures and devices and methods of forming the same Oct. 8, 2013
8541766 Nonvolatile memory device and nonvolatile memory apparatus Sep. 24, 2013
8536647 Semiconductor device Sep. 17, 2013
8530338 Structures of and methods for forming vertically aligned Si wire arrays Sep. 10, 2013
8531007 Semiconductor device and the method for manufacturing the same Sep. 10, 2013
8513642 Patterned doping of semiconductor substrates using photosensitive monolayers Aug. 20, 2013
8486798 Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof Jul. 16, 2013
8455982 Overlay mark enhancement feature Jun. 4, 2013
8440994 Nanotube array electronic and opto-electronic devices May. 14, 2013
8426926 Semiconductor devices having field effect transistors with epitaxial patterns in recessed regions Apr. 23, 2013
8421196 Semiconductor device and manufacturing method Apr. 16, 2013
8373156 Biological component detection device Feb. 12, 2013
8362575 Controlling the shape of source/drain regions in FinFETs Jan. 29, 2013
8357926 Gain-clamped semiconductor optical amplifiers Jan. 22, 2013
8354333 Patterned doping of semiconductor substrates using photosensitive monolayers Jan. 15, 2013
8350272 Semiconductor device Jan. 8, 2013
8324687 Semiconductor device Dec. 4, 2012
8324071 Method for forming silicon film, method for forming pn junction and pn junction formed using the same Dec. 4, 2012
8283653 Non-planar germanium quantum well devices Oct. 9, 2012
8247794 Nitride semiconductor device Aug. 21, 2012
8212235 Nanowire-based opto-electronic device Jul. 3, 2012
8193525 Method for producing planar transporting resonance heterostructures Jun. 5, 2012
8188521 Power semiconductor device May. 29, 2012
8148774 Method of fabricating semiconductor device with a high breakdown voltage between neighboring wells Apr. 3, 2012
8138582 Impurity introducing apparatus having feedback mechanism using optical characteristics of impurity introducing region Mar. 20, 2012
8124950 Concentric phase change memory element Feb. 28, 2012
8110898 Polymer-embedded semiconductor rod arrays Feb. 7, 2012
8110897 Semiconductor device with carbon-containing region Feb. 7, 2012
8102001 Initial-on SCR device for on-chip ESD protection Jan. 24, 2012
8092594 Carbon ribbon to be covered with a thin layer made of semiconductor material and method for depositing a layer of this type Jan. 10, 2012
8093676 Semiconductor component including an edge termination having a trench and method for producing Jan. 10, 2012
8026567 Thermoelectric cooler for semiconductor devices with TSV Sep. 27, 2011
8022392 Semiconductor layer structure with superlattice Sep. 20, 2011
8014636 Electrical contacts on top of waveguide structures for efficient optical modulation in silicon photonic devices Sep. 6, 2011
8008717 Semiconductor device Aug. 30, 2011
7973301 Low power phase change memory cell with large read signal Jul. 5, 2011
7973389 Isolated tri-gate transistor fabricated on bulk substrate Jul. 5, 2011

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