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Class Information
Number: 257/E29.002
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo)
Description: This subclass is indented under subclass E29.001. This subclass is substantially the same in scope as ECLA classification H01L29/02.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.105 Characterized by combinations of two or more features of crystalline structure, shape, materials, physical imperfections, and concentration/distribution of impurities in bulk material (epo) 30
257/E29.109 Characterized by concentration or distribution of impurities in bulk material (epo) 164
257/E29.068 Characterized by materials of semiconductor body (epo) 115
257/E29.106 Characterized by physical imperfections; having polished or roughened surface (epo) 12
257/E29.005 Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) 92
257/E29.003 Characterized by their crystalline structure (e.g., polycrystalline, cubic) particular orientation of crystalline planes (epo) 355


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8710478 Nonvolatile semiconductor storage device and a manufacturing method thereof Apr. 29, 2014
8710633 Semiconductor overlapped PN structure and manufacturing method thereof Apr. 29, 2014
8704203 Transition metal oxide bilayers Apr. 22, 2014
8692289 Fast turn on silicon controlled rectifiers for ESD protection Apr. 8, 2014
8686391 Pore phase change material cell fabricated from recessed pillar Apr. 1, 2014
8686389 Diffusion barrier layer for resistive random access memory cells Apr. 1, 2014
8685786 Method of manufacturing a semiconductor memory device having a resistance change memory layer Apr. 1, 2014
8680651 Nanopillar decoupling capacitor Mar. 25, 2014
8681530 Nonvolatile memory device having a current limiting element Mar. 25, 2014
8658999 Semiconductor device Feb. 25, 2014
8659120 Semiconductor device substrate and semiconductor device Feb. 25, 2014
8653518 Semiconductor device Feb. 18, 2014
8653493 Variable resistance memory devices and methods of manufacturing the same Feb. 18, 2014
8643078 Semiconductor structure and manufacturing method of the same Feb. 4, 2014
8629421 Memory cells Jan. 14, 2014
8630326 Method and system of heterogeneous substrate bonding for photonic integration Jan. 14, 2014
8624351 Package structure and method for making the same Jan. 7, 2014
8623697 Avoiding degradation of chalcogenide material during definition of multilayer stack structure Jan. 7, 2014
8618602 Semiconductor device and method of forming the same Dec. 31, 2013
8614117 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor Dec. 24, 2013
8610101 Nonvolatile variable resistance element having a variable resistive layer disposed between first and second electrodes Dec. 17, 2013
8610248 Capacitor structure and method of manufacture Dec. 17, 2013
8611388 Method and system for heterogeneous substrate bonding of waveguide receivers Dec. 17, 2013
8604457 Phase-change memory element Dec. 10, 2013
8598561 Nonvolatile memory device and method for manufacturing same Dec. 3, 2013
8592954 Semiconductor element and method of manufacturing the semiconductor element Nov. 26, 2013
8592798 Non-volatile storage device and method for manufacturing the same Nov. 26, 2013
8592250 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor Nov. 26, 2013
8586405 Semiconductor device manufacturing method Nov. 19, 2013
8586959 Memristive switch device Nov. 19, 2013
8575583 Memory storage device having a variable resistance memory storage element Nov. 5, 2013
8569104 Transition metal oxide bilayers Oct. 29, 2013
8557627 Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same Oct. 15, 2013
8558238 Semiconductor device and method for manufacturing semiconductor device Oct. 15, 2013
8558277 Semiconductor device and method of providing electrostatic discharge protection for integrated passive devices Oct. 15, 2013
8558208 Resistance random access memory including variable-resistance layers Oct. 15, 2013
8552476 Schottky barrier diode and MOSFET semiconductor device Oct. 8, 2013
8552413 Nonvolatile memory device using a tunnel nitride as a current limiter element Oct. 8, 2013
8551862 Method of manufacturing laminated wafer by high temperature laminating method Oct. 8, 2013
8541768 Semiconductor device having stacked structural bodies and method for manufacturing the same Sep. 24, 2013
8541766 Nonvolatile memory device and nonvolatile memory apparatus Sep. 24, 2013
8541767 Memory component having an electrical contact free of a metal layer Sep. 24, 2013
8536027 Method for making a semi-conducting substrate located on an insulation layer Sep. 17, 2013
8536035 Silicon-on-insulator substrate and method of forming Sep. 17, 2013
8536555 Voltage sensitive resistor (VSR) read only memory Sep. 17, 2013
8536557 Light emitting device and light emitting device package Sep. 17, 2013
8537605 Nonvolatile semiconductor memory device having coplanar surfaces at resistance variable layer and wiring layer and manufacturing method thereof Sep. 17, 2013
8530874 Insulated phase change memory Sep. 10, 2013
8530998 Substrate compositions and methods for forming semiconductor on insulator devices Sep. 10, 2013
8519374 Resistive memory device and method for fabricating the same Aug. 27, 2013

1 2 3 4 5










 
 
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