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Class Information
Number: 257/E29.001
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo)
Description: This main group provides for semiconductor devices which operate by the movement of charge carriers, i.e. electrons and holes, from one energy level to another within the semiconductor material and can modify an input voltage to achieve rectification, amplification, oscillation or switching action, or capacitors or resistors with at least one potential-jump barrier or surface barrier. This subclass is substantially the same in scope as ECLA classification H01L29/00.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.002 Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) 223
257/E29.111 Electrodes (epo) 48
257/E29.166 Types of semiconductor device (epo) 76


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8686536 Electrical fuse structure and method of formation Apr. 1, 2014
8647922 Method of forming an interconnect on a semiconductor substrate Feb. 11, 2014
8648442 Semiconductor device and method of manufacturing the same Feb. 11, 2014
8604562 Post CMP planarization by cluster ion beam etch Dec. 10, 2013
8604585 Fuse of semiconductor device and method for fabricating the same Dec. 10, 2013
8604618 Structure and method for reducing vertical crack propagation Dec. 10, 2013
8581342 Semiconductor device with field electrode and method Nov. 12, 2013
8575678 Semiconductor memory device with floating gate Nov. 5, 2013
8569864 Piezo-acoustic thin film resonator having a crystalline zinc oxide layer Oct. 29, 2013
8541775 Schottky diode, resistive memory device having schottky diode and method of manufacturing the same Sep. 24, 2013
8531007 Semiconductor device and the method for manufacturing the same Sep. 10, 2013
8502355 Overlay vernier mask pattern, formation method thereof, semiconductor device including overlay vernier pattern, and formation method thereof Aug. 6, 2013
8476688 Semiconductor device and method for manufacturing the same,which prevents leaning of a storage node when forming a capacitor having a plurality of storage nodes of "L" or "+" shape support pat Jul. 2, 2013
8466044 Memory cell that includes a carbon-based memory element and methods forming the same Jun. 18, 2013
8455985 Integrated circuit devices having selectively strengthened composite interlayer insulation layers and methods of fabricating the same Jun. 4, 2013
8436350 Semiconductor device using an oxide semiconductor with a plurality of metal clusters May. 7, 2013
8426842 Doped graphene electronic materials Apr. 23, 2013
8395243 Surface passivation by quantum exclusion using multiple layers Mar. 12, 2013
8362540 Integrated circuit package with reduced parasitic loop inductance Jan. 29, 2013
8338304 Methods to reduce the critical dimension of semiconductor devices and related semiconductor devices Dec. 25, 2012
8334573 Buried etch stop layer in trench isolation structures for superior surface planarity in densely packed semiconductor devices Dec. 18, 2012
8314472 Semiconductor structure comprising pillar Nov. 20, 2012
8314003 Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems Nov. 20, 2012
8294202 Metal gate structure of a semiconductor device Oct. 23, 2012
8294209 Semiconductor memory device and method of manufacturing the same Oct. 23, 2012
8283720 Power semiconductor device Oct. 9, 2012
8232595 Semiconductor device including a power MISFET and method of manufacturing the same Jul. 31, 2012
8222677 Semiconductor memory device and method of manufacturing the same Jul. 17, 2012
8216882 Method of producing a microelectromechanical (MEMS) sensor device Jul. 10, 2012
8203171 Defective graphene-based memristor Jun. 19, 2012
8198707 Establishing a uniformly thin dielectric layer on graphene in a semiconductor device without affecting the properties of graphene Jun. 12, 2012
8193596 Micro-electro-mechanical systems (MEMS) package Jun. 5, 2012
8183638 Dual triggered silicon controlled rectifier May. 22, 2012
8178396 Methods for forming three-dimensional memory devices, and related structures May. 15, 2012
8173510 Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric May. 8, 2012
8169050 BEOL wiring structures that include an on-chip inductor and an on-chip capacitor, and design structures for a radiofrequency integrated circuit May. 1, 2012
8159023 Semiconductor device Apr. 17, 2012
8148754 Low resistance integrated MOS structure Apr. 3, 2012
8138570 Isolated junction field-effect transistor Mar. 20, 2012
8134197 Nanowire transistor with surrounding gate Mar. 13, 2012
8134221 Inductor and filter Mar. 13, 2012
8125056 Double trench rectifier Feb. 28, 2012
8102021 RF devices Jan. 24, 2012
8093159 Manufacturing method of semiconductor device, and semiconductor device Jan. 10, 2012
8089127 Dual triggered silicon controlled rectifier Jan. 3, 2012
8084783 GaN-based device cascoded with an integrated FET/Schottky diode device Dec. 27, 2011
8072021 Nonvolatile semiconductor memory device Dec. 6, 2011
8058700 Surge overcurrent protection for solid state, smart, highside, high current, power switch Nov. 15, 2011
8053822 Capacitorless DRAM and methods of manufacturing and operating the same Nov. 8, 2011
8053838 Structures, fabrication methods, design structures for strained fin field effect transistors (FinFets) Nov. 8, 2011

1 2 3










 
 
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