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Class Information
Number: 257/E27.103
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of individual components in a repetitive configuration (epo) > Including field-effect component (epo) > Read-only memory, rom, structure (epo) > Electrically programmable rom (epo)
Description: This subclass is indented under subclass E27.102. This subclass is substantially the same in scope as ECLA classification H01L27/115.

Sub-classes under this class:

Class Number Class Name Patents
257/E27.104 Ferroelectric non-volatile memory structure (epo) 926

Patents under this class:

Patent Number Title Of Patent Date Issued
8704289 Nonvolatile semiconductor memory device Apr. 22, 2014
8680605 Stacked memory devices and method of manufacturing the same Mar. 25, 2014
8658532 Method and material for forming a double exposure lithography pattern Feb. 25, 2014
8653585 Nonvolatile memory device including a channel pad having a channel extending portion and a spacer and method of manufacturing the same Feb. 18, 2014
8653581 HTO offset for long Leffective, better device performance Feb. 18, 2014
8648408 Semiconductor device Feb. 11, 2014
8648405 Nonvolatile semiconductor memory device including memory cells formed to have double-layered gate electrodes Feb. 11, 2014
8637915 Nonvolatile semiconductor memory Jan. 28, 2014
8633548 Non-volatile programmable memory cell and array for programmable logic array Jan. 21, 2014
8629009 Programmable high-k/metal gate memory device Jan. 14, 2014
8604538 Non-volatile semiconductor memory device with intrinsic charge trapping layer Dec. 10, 2013
8599616 Three-dimensional NAND memory with stacked mono-crystalline channels Dec. 3, 2013
8592885 Nonvolatile semiconductor memory device and method for manufacturing the same Nov. 26, 2013
8581317 SOI MuGFETs having single gate electrode level Nov. 12, 2013
8569829 Nonvolatile semiconductor memory device Oct. 29, 2013
8569133 Nonvolatile semiconductor memory device and method of manufacturing the same Oct. 29, 2013
8552537 Semiconductor device and method for fabricating the same Oct. 8, 2013
8546920 Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX) Oct. 1, 2013
8546867 Non-volatile memory semiconductor device Oct. 1, 2013
8536657 Non-volatile semiconductor memory device and process of manufacturing the same Sep. 17, 2013
8525263 Programmable high-k/metal gate memory device Sep. 3, 2013
8513072 Manufacturing method of semiconductor device with element isolation region formed within Aug. 20, 2013
8508047 Buried word line memory integrated circuit system Aug. 13, 2013
8507997 Mask read-only memory having a fake select transistor Aug. 13, 2013
8507340 Method of fabricating a nonvolatile memory Aug. 13, 2013
8501609 Method for generating a three-dimensional NAND memory with mono-crystalline channels using sacrificial material Aug. 6, 2013
8497547 Semiconductor device and a method of manufacturing the same Jul. 30, 2013
8492875 Nonvolatile memory element having a tantalum oxide variable resistance layer Jul. 23, 2013
8492831 Vertical non-volatile memory device and method of fabricating the same Jul. 23, 2013
8476691 High reliability-high voltage junction termination with charge dissipation layer Jul. 2, 2013
8471295 High density flash memory device, cell string and fabricating method thereof Jun. 25, 2013
8470704 Nonvolatile memory device and method of forming the nonvolatile memory device including giving an upper portion of an insulating layer an etching selectivity with respect to a lower portion Jun. 25, 2013
8455923 Embedded NOR flash memory process with NAND cell and true logic compatible low voltage device Jun. 4, 2013
8445347 3D vertical NAND and method of making thereof by front and back side processing May. 21, 2013
8436416 Nonvolatile semiconductor memory device and method for manufacturing same May. 7, 2013
8436415 Nonvolatile semiconductor memory device and method of manufacturing the same May. 7, 2013
8415734 Memory device protection layer Apr. 9, 2013
8415722 Memory devices and memory cells Apr. 9, 2013
8415218 Atomic layer deposition epitaxial silicon growth for TFT flash memory cell Apr. 9, 2013
8395203 Semiconductor device and a manufacturing method thereof Mar. 12, 2013
8390056 Non-volatile semiconductor memory device with intrinsic charge trapping layer Mar. 5, 2013
8383481 Semiconductor memory device and method of manufacturing the same Feb. 26, 2013
8378431 Semiconductor device and method for producing the semiconductor device Feb. 19, 2013
8372711 Methods of fabricating semiconductor devices with sidewall conductive patterns Feb. 12, 2013
8368137 Dual bit line metal layers for non-volatile memory Feb. 5, 2013
8354707 Electrically programmable device with embedded EEPROM and method for making thereof Jan. 15, 2013
8330206 Nonvolatile semiconductor memory device and manufacturing method thereof Dec. 11, 2012
8330201 Non-volatile semiconductor memory using charge-accumulation insulating film Dec. 11, 2012
8324679 Nonvolatile semiconductor memory Dec. 4, 2012
8319277 Semiconductor device, method of manufacturing same, and apparatus for designing same Nov. 27, 2012

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