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Class Information
Number: 257/E27.099
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of individual components in a repetitive configuration (epo) > Including field-effect component (epo) > Static random access memory, sram, structure (epo) > Load element being a mosfet transistor (epo)
Description: OLE_LINK1This subclass is indented under subclass E27.098. This subclass is substantially the same in scope as ECLA classification OLE_LINK1 H01L27/11F.

Sub-classes under this class:

Class Number Class Name Patents
257/E27.1 Load element being a thin film transistor (epo) 392

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
5939762 SRAM cell using thin gate oxide pulldown transistors Aug. 17, 1999
5936286 Differential poly-edge oxidation for stable SRAM cells Aug. 10, 1999
5930163 Semiconductor memory device having two P-well layout structure Jul. 27, 1999
5920097 Compact, dual-transistor integrated circuit Jul. 6, 1999
5917212 Memory cell with capacitance for single event upset protection Jun. 29, 1999
5909047 Semiconductor memory device Jun. 1, 1999
5907502 SRAM cell and method of manufacturing the same May. 25, 1999
5902121 Semiconductor device and method for manufacturing semiconductor device May. 11, 1999
5892261 SRAM bitline pull-up MOSFET structure for internal circuit electro-static discharge immunity Apr. 6, 1999
5889329 Tri-directional interconnect architecture for SRAM Mar. 30, 1999
5886382 Trench transistor structure comprising at least two vertical transistors Mar. 23, 1999
5886388 Static semiconductor memory device and manufacturing method thereof Mar. 23, 1999
5880503 Semiconductor integrated circuit device having static memory cell with CMOS structure Mar. 9, 1999
5879980 Method of making static random access memory cell having a trench field plate for increased capacitance Mar. 9, 1999
5872380 Hexagonal sense cell architecture Feb. 16, 1999
5864165 Triangular semiconductor NAND gate Jan. 26, 1999
5856216 Method of manufacturing a semiconductor integrated circuit device including an SRAM Jan. 5, 1999
5854497 Semiconductor memory device Dec. 29, 1998
5843816 Integrated self-aligned butt contact process flow and structure for six transistor full complementary metal oxide semiconductor static random access memory cell Dec. 1, 1998
5844836 Memory cell having increased capacitance via a local interconnect to gate capacitor and a method for making such a cell Dec. 1, 1998
5844837 Static memory device including supplemental gate capacitance Dec. 1, 1998
5840618 Method of manufacturing semiconductor device using an amorphous material Nov. 24, 1998
5834851 SRAM having load transistor formed above driver transistor Nov. 10, 1998
5834821 Triangular semiconductor "AND" gate device Nov. 10, 1998
5834798 Semiconductor device containing semiconductor region formed in active layer on sidewall of contact opening Nov. 10, 1998
5831898 Static random access memory semiconductor layout Nov. 3, 1998
5831326 Semiconductor device with resistive load element Nov. 3, 1998
5821136 Inverted field-effect device with polycrystalline silicon/germanium channel Oct. 13, 1998
5822214 CAD for hexagonal architecture Oct. 13, 1998
5818080 Semiconductor memory device including a memory cell region of six transistors Oct. 6, 1998
5814886 Semiconductor device having local connections formed by conductive plugs and method of making the same Sep. 29, 1998
5811863 Transistors having dynamically adjustable characteristics Sep. 22, 1998
5808330 Polydirectional non-orthoginal three layer interconnect architecture Sep. 15, 1998
5804477 Method of making a 6-transistor compact static ram cell Sep. 8, 1998
5805494 Trench capacitor structures Sep. 8, 1998
5801396 Inverted field-effect device with polycrystalline silicon/germanium channel Sep. 1, 1998
5801422 Hexagonal SRAM architecture Sep. 1, 1998
5798551 Semiconductor integrated circuit device and method of manufacturing the same Aug. 25, 1998
5789770 Hexagonal architecture with triangular shaped cells Aug. 4, 1998
5780328 Process for producing semiconductor integrated circuit Jul. 14, 1998
5780910 SRAM with stacked capacitor spaced from gate electrodes Jul. 14, 1998
5777360 Hexagonal field programmable gate array architecture Jul. 7, 1998
5770892 Field effect device with polycrystalline silicon channel Jun. 23, 1998
5767554 Semiconductor integrated circuit device and process for fabricating the same Jun. 16, 1998
5754467 Semiconductor integrated circuit device and process for manufacturing the same May. 19, 1998
5754468 Compact multiport static random access memory cell May. 19, 1998
5751640 Semiconductor memory device and method thereof May. 12, 1998
5744844 CMOS SRAM cell Apr. 28, 1998
5741735 Local ground and V.sub.CC connection in an SRAM cell Apr. 21, 1998
5742078 Integrated circuit SRAM cell layouts Apr. 21, 1998

1 2 3 4 5 6 7 8 9 10 11 12 13

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