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Class Information
Number: 257/E27.099
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of individual components in a repetitive configuration (epo) > Including field-effect component (epo) > Static random access memory, sram, structure (epo) > Load element being a mosfet transistor (epo)
Description: OLE_LINK1This subclass is indented under subclass E27.098. This subclass is substantially the same in scope as ECLA classification OLE_LINK1 H01L27/11F.










Sub-classes under this class:

Class Number Class Name Patents
257/E27.1 Load element being a thin film transistor (epo) 392


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
4997783 Static ram cell with trench pull-down transistors and buried-layer ground plate Mar. 5, 1991
4989061 Radiation hard memory cell structure with drain shielding Jan. 29, 1991
4987090 Static ram cell with trench pull-down transistors and buried-layer ground plate Jan. 22, 1991
4987092 Process for manufacturing stacked semiconductor devices Jan. 22, 1991
4954866 Semiconductor integrated circuit memory Sep. 4, 1990
4939567 Trench interconnect for CMOS diffusion regions Jul. 3, 1990
4922441 Gate array device having a memory cell/interconnection region May. 1, 1990
4903094 Memory cell structure having radiation hardness Feb. 20, 1990
4901279 MESFET sram with power saving current-limiting transistors Feb. 13, 1990
4890141 CMOS device with both p+ and n+ gates Dec. 26, 1989
4890144 Integrated circuit trench cell Dec. 26, 1989
4876215 Method of making a static ram cell with trench pull-down transistors and buried-layer ground plate Oct. 24, 1989
4845544 Semiconductor integrated device having a field-effect transistor type memory cell array and peripheral circuitry structure Jul. 4, 1989
4833644 Memory cell circuit having radiation hardness May. 23, 1989
4823314 Integrated circuit dual port static memory cell Apr. 18, 1989
4799101 Substrate bias through polysilicon line Jan. 17, 1989
4794561 Static ram cell with trench pull-down transistors and buried-layer ground plate Dec. 27, 1988
4780751 Semiconductor integrated circuit device Oct. 25, 1988
4772927 Thin film FET doped with diffusion inhibitor Sep. 20, 1988
4764480 Process for making high performance CMOS and bipolar integrated devices on one substrate with reduced cell size Aug. 16, 1988
4760557 Radiation hard memory cell circuit with high inverter impedance ratio Jul. 26, 1988
4740479 Method for the manufacture of cross-couplings between n-channel and p-channel CMOS field effect transistors of static write-read memories Apr. 26, 1988
4725875 Memory cell with diodes providing radiation hardness Feb. 16, 1988
4710897 Semiconductor memory device comprising six-transistor memory cells Dec. 1, 1987
4679171 MOS/CMOS memory cell Jul. 7, 1987
4670768 Complementary MOS integrated circuits having vertical channel FETs Jun. 2, 1987
4639758 Metal oxide semiconductor field-effect transistor with metal source making ohmic contact to channel-base region Jan. 27, 1987
4631563 Metal oxide semiconductor field-effect transistor with metal source region Dec. 23, 1986
4627153 Method of producing a semiconductor memory device Dec. 9, 1986
4613886 CMOS static memory cell Sep. 23, 1986
4609835 Semiconductor integrated circuit Sep. 2, 1986
4570237 Microprocessor Feb. 11, 1986
4566025 CMOS Structure incorporating vertical IGFETS Jan. 21, 1986
4554644 Static RAM cell Nov. 19, 1985
4554570 Vertically integrated IGFET device Nov. 19, 1985
4530149 Method for fabricating a self-aligned vertical IGFET Jul. 23, 1985
4525811 Semiconductor memory and method of producing the same Jun. 25, 1985
4524377 Integrated circuit Jun. 18, 1985
4499558 Five-transistor static memory cell implemental in CMOS/bulk Feb. 12, 1985
4484087 CMOS latch cell including five transistors, and static flip-flops employing the cell Nov. 20, 1984
4481524 Semiconductor memory device having stacked polycrystalline silicon layers Nov. 6, 1984
4435786 Self-refreshing memory cell Mar. 6, 1984
4423491 Self-refreshing memory cell Dec. 27, 1983
4349894 Semiconductor memory cell with synthesized load resistors Sep. 14, 1982
4348746 Semiconductor integrated circuit device having a plurality of insulated gate field effect transistors Sep. 7, 1982
4320312 Smaller memory cells and logic circuits Mar. 16, 1982
4262340 Semiconductor memory device Apr. 14, 1981
4247915 Punch-through load devices in high density static memory cell Jan. 27, 1981
4246592 High density static memory cell Jan. 20, 1981
4236229 Semiconductor memory cell with synthesized load resistors Nov. 25, 1980

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