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Class Information
Number: 257/E27.099
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of individual components in a repetitive configuration (epo) > Including field-effect component (epo) > Static random access memory, sram, structure (epo) > Load element being a mosfet transistor (epo)
Description: OLE_LINK1This subclass is indented under subclass E27.098. This subclass is substantially the same in scope as ECLA classification OLE_LINK1 H01L27/11F.










Sub-classes under this class:

Class Number Class Name Patents
257/E27.1 Load element being a thin film transistor (epo) 392


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
8648426 Tunneling transistors Feb. 11, 2014
8604557 Semiconductor memory device and method for manufacturing Dec. 10, 2013
8476717 Semiconductor transistors having reduced distances between gate electrode regions Jul. 2, 2013
8450778 Method and apparatus for memory cell layout May. 28, 2013
8441076 SRAM May. 14, 2013
8436400 Semiconductor device with gate level including gate electrode conductors for transistors of first type and transistors of second type with some gate electrode conductors of different length May. 7, 2013
8378430 Transistors having argon gate implants and methods of forming the same Feb. 19, 2013
8378425 Semiconductor storage device Feb. 19, 2013
8283701 Semiconductor device with dynamic array sections defined and placed according to manufacturing assurance halos Oct. 9, 2012
8264009 Semiconductor device with linearly restricted gate level region including four transistors of first type and four transistors of second type with gate defining shapes of different length Sep. 11, 2012
8258549 Semiconductor device including two transistors of first type having gates formed by conductors of different length respectively aligned with two transistors of second type having gates formed Sep. 4, 2012
8258548 Semiconductor device with gate level including four transistors of first type and four transistors of second type separated by non-diffusion region with restricted gate contact placement over Sep. 4, 2012
8258547 Semiconductor device with linearly restricted gate level region including two transistors of first type and two transistors of second type with offset gate contacts Sep. 4, 2012
8253173 Semiconductor device with gate level including four transistors of first type and four transistors of second type separated by non-diffusion region and having at least two gate contacts positi Aug. 28, 2012
8217428 Integrated circuit including gate electrode level region including at least three linear-shaped conductive structures of equal length having aligned ends and positioned at equal pitch and form Jul. 10, 2012
8198656 Integrated circuit including gate electrode level region including at least four linear-shaped conductive structures of equal length having aligned ends and positioned at equal pitch and formi Jun. 12, 2012
8173532 Semiconductor transistors having reduced distances between gate electrode regions May. 8, 2012
8138525 Integrated circuit including at least three linear-shaped conductive structures of different length each forming gate of different transistor Mar. 20, 2012
8134186 Integrated circuit including at least three linear-shaped conductive structures at equal pitch including linear-shaped conductive structure having non-gate portion length greater than gate por Mar. 13, 2012
8134185 Integrated circuit having gate electrode level region including at least seven linear-shaped conductive structures at equal pitch including linear-shaped conductive structure forming transisto Mar. 13, 2012
8134184 Integrated circuit having gate electrode level region including at least four linear-shaped conductive structures with some outer-contacted linear-shaped conductive structures having larger ou Mar. 13, 2012
8134183 Integrated circuit including linear-shaped conductive structures that have gate portions and extending portions of different size Mar. 13, 2012
8129796 Semiconductor device Mar. 6, 2012
8129757 Integrated circuit including at least six linear-shaped conductive structive structures at equal pitch including at least two linear-shaped conductive structures having non-gate portions of di Mar. 6, 2012
8129756 Integrated circuit including at least six linear-shaped conductive structures forming gate electrodes of transistors with at least two different extension distances beyond conductive contactin Mar. 6, 2012
8129755 Integrated circuit with gate electrode level including at least four linear-shaped conductive structures of equal length and equal pitch with linear-shaped conductive structure forming one tra Mar. 6, 2012
8129754 Integrated circuit with gate electrode level including at least six linear-shaped conductive structures forming gate electrodes of transisters with at least one pair of linear-shaped conductiv Mar. 6, 2012
8129753 Integrated circuit including gate electrode level region including at least seven linear-shaped conductive structures of equal length positioned at equal pitch with at least two linear-shaped Mar. 6, 2012
8129752 Integrated circuit including a linear-shaped conductive structure forming one gate electrode and having length greater than or equal to one-half the length of linear-shaped conductive structur Mar. 6, 2012
8129751 Integrated circuit including at least six linear-shaped conductive structures forming gate electrodes and including four conductive contacting structures having at least two different connecti Mar. 6, 2012
8129750 Integrated circuit including at least six linear-shaped conductive structures forming gate electrodes of transistors with at least two linear-shaped conductive structures of different length Mar. 6, 2012
8110854 Integrated circuit device with linearly defined gate electrode level region and shared diffusion region of first type connected to shared diffusion region of second type through at least two i Feb. 7, 2012
8101975 Integrated circuit device with gate level region including non-gate linear conductive segment positioned within 965 nanometers of four transistors of first type and four transistors of second Jan. 24, 2012
8097518 Semiconductor device and manufacturing method therefor Jan. 17, 2012
8089104 Integrated circuit with gate electrode level region including multiple linear-shaped conductive structures forming gate electrodes of transistors and including uniformity extending portions of Jan. 3, 2012
8089103 Integrated circuit device with gate level region including at least three linear-shaped conductive segments having offset line ends and forming three transistors of first type and one transist Jan. 3, 2012
8089102 Method for fabricating integrated circuit having three or more linear-shaped gate electrode level conductive segments of both equal length and equal pitch Jan. 3, 2012
8089101 Integrated circuit device with gate electrode level region including two side-by-side ones of at least three linear-shaped conductive structures electrically connected to each other through no Jan. 3, 2012
8089098 Integrated circuit device and associated layout including linear gate electrodes of different transistor types next to linear-shaped non-gate conductive segment Jan. 3, 2012
8089099 Integrated circuit device and associated layout including gate electrode level region of 965 NM radius with linear-shaped conductive segments on fixed pitch Jan. 3, 2012
8089100 Integrated circuit with gate electrode level region including at least four linear-shaped conductive structures forming gate electrodes of transistors and including extending portions of at le Jan. 3, 2012
8072003 Integrated circuit device and associated layout including two pairs of co-aligned complementary gate electrodes with offset gate contact structures Dec. 6, 2011
8058671 Semiconductor device having at least three linear-shaped electrode level conductive features of equal length positioned side-by-side at equal pitch Nov. 15, 2011
8059452 Cell structure for dual port SRAM Nov. 15, 2011
8035133 Semiconductor device having two pairs of transistors of different types formed from shared linear-shaped conductive features with intervening transistors of common type on equal pitch Oct. 11, 2011
8035169 Semiconductor device with suppressed crystal defects in active areas Oct. 11, 2011
8030689 Integrated circuit device and associated layout including separated diffusion regions of different type each having four gate electrodes with each of two complementary gate electrode pairs for Oct. 4, 2011
8022441 Semiconductor device and associated layouts having transistors formed from six linear conductive segments with gate electrode-to-gate electrode connection through single interconnect level and Sep. 20, 2011
8013399 SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustable Sep. 6, 2011
8004010 Semiconductor device and a method of manufacturing the same Aug. 23, 2011

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