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Class Information
Number: 257/E27.095
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of individual components in a repetitive configuration (epo) > Including field-effect component (epo) > Dynamic random access memory, dram, structure (epo) > One-transistor memory cell structure, i.e., each memory cell containing only one transistor (epo) > Capacitor and transistor in common trench (epo)
Description: This subclass is indented under subclass E27.078. This subclass is substantially the same in scope as ECLA classification H01L27/108F10.










Sub-classes under this class:

Class Number Class Name Patents
257/E27.096 Vertical transistor (epo) 301


Patents under this class:

Patent Number Title Of Patent Date Issued
8552523 Semiconductor device and method for manufacturing Oct. 8, 2013
8492816 Deep trench decoupling capacitor Jul. 23, 2013
8482062 Semiconductor device having a floating semiconductor zone Jul. 9, 2013
8294189 Memory device and fabrication method thereof Oct. 23, 2012
8264033 Semiconductor device having a floating semiconductor zone Sep. 11, 2012
8253163 High voltage semiconductor device including a free wheel diode Aug. 28, 2012
8247305 Method and resulting structure for deep trench polysilicon hard mask removal Aug. 21, 2012
8164111 High voltage semiconductor device including a free wheel diode Apr. 24, 2012
8129789 Current control using thermally matched resistors Mar. 6, 2012
8026138 Method for manufacturing semiconductor apparatus having saddle-fin transistor and semiconductor apparatus fabricated thereby Sep. 27, 2011
7943474 EDRAM including metal plates May. 17, 2011
7910983 MOS transistor having an increased gate-drain capacitance Mar. 22, 2011
7884418 Semiconductor device and transistor Feb. 8, 2011
7863663 Hybrid electrical contact Jan. 4, 2011
7821047 Semiconductor apparatus and method for manufacturing the same Oct. 26, 2010
7800187 Trech-type vertical semiconductor device having gate electrode buried in rounded hump opening Sep. 21, 2010
7757393 Capacitive microaccelerometers and fabrication methods Jul. 20, 2010
7709323 Methods of forming nand-type nonvolatile memory devices May. 4, 2010
7704836 Method of fabricating super trench MOSFET including buried source electrode Apr. 27, 2010
7683416 Post STI trench capacitor Mar. 23, 2010
7679133 Vertical-type non-volatile memory devices Mar. 16, 2010
7670901 Method of fabricating a bottle trench and a bottle trench capacitor Mar. 2, 2010
7573120 Semiconductor device and method of manufacturing the same Aug. 11, 2009
7560773 Semiconductor device Jul. 14, 2009
7528035 Vertical trench memory cell with insulating ring May. 5, 2009
7494865 Fabrication method of metal oxide semiconductor transistor Feb. 24, 2009
7462901 Field effect transistor Dec. 9, 2008
7388274 Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errors Jun. 17, 2008
7262452 Method of forming DRAM device having capacitor and DRAM device so formed Aug. 28, 2007
7247905 Offset vertical device Jul. 24, 2007
7199416 Systems and methods for a memory and/or selection element formed within a recess in a metal line Apr. 3, 2007
7129130 Out of the box vertical transistor for eDRAM on SOI Oct. 31, 2006
7057223 Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor Jun. 6, 2006
6764901 Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor Jul. 20, 2004
6740920 Vertical MOSFET with horizontally graded channel doping May. 25, 2004
6066869 Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor May. 23, 2000
5502320 Dynamic random access memory (DRAM) semiconductor device Mar. 26, 1996
5164917 Vertical one-transistor DRAM with enhanced capacitance and process for fabricating Nov. 17, 1992
5021355 Method of fabricating cross-point lightly-doped drain-source trench transistor Jun. 4, 1991
4954854 Cross-point lightly-doped drain-source trench transistor and fabrication process therefor Sep. 4, 1990











 
 
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