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Class Information
Number: 257/E27.094
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of individual components in a repetitive configuration (epo) > Including field-effect component (epo) > Dynamic random access memory, dram, structure (epo) > One-transistor memory cell structure, i.e., each memory cell containing only one transistor (epo) > Capacitor in trench (epo) > Having storage electrode extension stacked over the transistor (epo)
Description: This subclass is indented under subclass E27.092. This subclass is substantially the same in scope as ECLA classification H01L27/108F8S.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8203204 Stacked semiconductor package Jun. 19, 2012
7951682 Method for fabricating capacitor in semiconductor device May. 31, 2011
7952129 Semiconductor devices having a vertical channel transistor May. 31, 2011
7847384 Semiconductor package and manufacturing method thereof Dec. 7, 2010
7741670 Semiconductor decoupling capacitor Jun. 22, 2010
7667258 Double-sided container capacitors using a sacrificial layer Feb. 23, 2010
7655968 Semiconductor devices Feb. 2, 2010
7646053 Memory cell storage node length Jan. 12, 2010
7576383 Capacitor having tapered cylindrical storage node and method for manufacturing the same Aug. 18, 2009
7541635 Semiconductor fabrication using a collar Jun. 2, 2009
7535046 Dielectric memory and manufacturing method thereof May. 19, 2009
7301192 Dram cell pair and dram memory cell array Nov. 27, 2007
7202127 Methods of forming a plurality of capacitors Apr. 10, 2007
7180126 Multi-level memory cell array with lateral floating spacers Feb. 20, 2007
7126181 Capacitor constructions Oct. 24, 2006
7030441 Capacitor dielectric structure of a DRAM cell and method for forming thereof Apr. 18, 2006
6965148 Semiconductor memory device and manufacturing method of the same Nov. 15, 2005
6812093 Method for fabricating memory cell structure employing contiguous gate and capacitor dielectric layer Nov. 2, 2004
6790726 Method for producing an integrated semiconductor memory configuration Sep. 14, 2004
6784048 Method of fabricating a DRAM cell having a thin dielectric access transistor and a thick dielectric storage Aug. 31, 2004
6770924 Amorphous TiN films for an integrated capacitor dielectric/bottom plate using high dielectric constant materials Aug. 3, 2004
6744676 DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same Jun. 1, 2004
6654295 Reduced topography DRAM cell fabricated using a modified logic process and method for operating same Nov. 25, 2003
6642098 DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same Nov. 4, 2003
6613690 Approach for forming a buried stack capacitor structure featuring reduced polysilicon stringers Sep. 2, 2003
6573548 DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same Jun. 3, 2003
6569731 Method of forming a capacitor dielectric structure May. 27, 2003
6468887 Semiconductor device and a method of manufacturing the same Oct. 22, 2002
6468855 Reduced topography DRAM cell fabricated using a modified logic process and method for operating same Oct. 22, 2002
6399981 Integrated circuitry memory devices Jun. 4, 2002
6358812 Methods of forming storage capacitors Mar. 19, 2002
6303955 Dynamic random access memory with slanted active regions Oct. 16, 2001
6288431 Semiconductor device and a method of manufacturing the same Sep. 11, 2001
6271556 High density memory structure Aug. 7, 2001
6222215 DRAM circuitry Apr. 24, 2001
6150211 Methods of forming storage capacitors in integrated circuitry memory cells and integrated circuitry Nov. 21, 2000
6107105 Amorphous tin films for an integrated capacitor dielectric/bottom plate using high dielectric constant material Aug. 22, 2000
6081008 Composite trench-fin capacitors for DRAM Jun. 27, 2000
5989955 Method of forming stacked and trench type DRAM capacitor Nov. 23, 1999
5910667 Structure for a stacked dram capacitor Jun. 8, 1999
5903024 Stacked and trench type DRAM capacitor May. 11, 1999
5811283 Silicon on insulator (SOI) dram cell structure and process Sep. 22, 1998
5795804 Method of fabricating a stack/trench capacitor for a dynamic random access memory (DRAM) Aug. 18, 1998
5792686 Method of forming a bit-line and a capacitor structure in an integrated circuit Aug. 11, 1998
5753549 Method for fabricating capacitor of semiconductor device May. 19, 1998
5712813 Multi-level storage capacitor structure with improved memory density Jan. 27, 1998
5688709 Method for forming composite trench-fin capacitors for DRAMS Nov. 18, 1997
5665624 Method for fabricating trench/stacked capacitors on DRAM cells with increased capacitance Sep. 9, 1997
5640350 Multi-bit dynamic random access memory cell storage Jun. 17, 1997
5606189 Dynamic RAM trench capacitor device with contact strap Feb. 25, 1997

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