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Class Information
Number: 257/E27.09
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of individual components in a repetitive configuration (epo) > Including field-effect component (epo) > Dynamic random access memory, dram, structure (epo) > One-transistor memory cell structure, i.e., each memory cell containing only one transistor (epo) > Capacitor extending under the transistor (epo)
Description: This subclass is indented under subclass E27.078. This subclass is substantially the same in scope as ECLA classification H01L27/108F4.
Patents under this class:
Patent Number |
Title Of Patent |
Date Issued |
8659064 |
Semiconductor barrier layer constructions, and methods of forming semiconductor barrier layer constructions |
Feb. 25, 2014 |
8410534 |
Integrated circuit structures with silicon germanium film incorporated as local interconnect and/or contact |
Apr. 2, 2013 |
8258577 |
CMOS inverter device with fin structures |
Sep. 4, 2012 |
8129772 |
Integrated circuit structures with silicon germanium film incorporated as local interconnect and/or contact |
Mar. 6, 2012 |
7999330 |
Dynamic random access memory device and electronic systems |
Aug. 16, 2011 |
7989857 |
Electronic device including an insulating layer having different thicknesses and a conductive electrode and a process of forming the same |
Aug. 2, 2011 |
7791119 |
Electro-resistance element and electro-resistance memory using the same |
Sep. 7, 2010 |
7371645 |
Method of manufacturing a field effect transistor device with recessed channel and corner gate device |
May. 13, 2008 |
7235838 |
Semiconductor device substrate with embedded capacitor |
Jun. 26, 2007 |
7202518 |
Integrated dynamic random access memory element, array and process for fabricating such elements |
Apr. 10, 2007 |
7126177 |
Semiconductor memory device, semiconductor device, and method for production thereof |
Oct. 24, 2006 |
7049649 |
Semiconductor memory device and method for fabricating the same |
May. 23, 2006 |
6897531 |
Semiconductor memory device |
May. 24, 2005 |
6831322 |
Semiconductor memory device and method for fabricating the same |
Dec. 14, 2004 |
6790726 |
Method for producing an integrated semiconductor memory configuration |
Sep. 14, 2004 |
6777306 |
Memory cell capacitors having an over/under configuration |
Aug. 17, 2004 |
6774422 |
Memory cell capacitors having an over/under configuration |
Aug. 10, 2004 |
6734062 |
Methods of forming DRAM cells |
May. 11, 2004 |
6707090 |
DRAM cell constructions |
Mar. 16, 2004 |
6706608 |
Memory cell capacitors having an over/under configuration |
Mar. 16, 2004 |
6639243 |
DRAM cell constructions |
Oct. 28, 2003 |
6617651 |
Semiconductor memory device |
Sep. 9, 2003 |
6603164 |
Integrated semiconductor memory configuration |
Aug. 5, 2003 |
6569734 |
Method for two-sided fabrication of a memory array |
May. 27, 2003 |
6569733 |
Gate device with raised channel and method |
May. 27, 2003 |
6566182 |
DRAM memory cell for DRAM memory device and method for manufacturing it |
May. 20, 2003 |
6544833 |
Semiconductor memory device and manufacturing method thereof |
Apr. 8, 2003 |
6472703 |
Semiconductor memory device and method for fabricating the same |
Oct. 29, 2002 |
6458638 |
Method for fabricating a semiconductor memory device having silicon-on-insulator (SOI) structure |
Oct. 1, 2002 |
6429074 |
Semiconductor memory device and method for fabricating the same |
Aug. 6, 2002 |
6429070 |
DRAM cell constructions, and methods of forming DRAM cells |
Aug. 6, 2002 |
6410379 |
Method of forming a submerged semiconductor structure |
Jun. 25, 2002 |
6380028 |
Semiconductor device and a method of manufacturing thereof |
Apr. 30, 2002 |
6335896 |
Dynamic random access memory |
Jan. 1, 2002 |
6329239 |
Dram cell formed on an insulating layer having a vertical channel and a manufacturing method thereof |
Dec. 11, 2001 |
6330181 |
Method of forming a gate device with raised channel |
Dec. 11, 2001 |
6320227 |
Semiconductor memory device and method for fabricating the same |
Nov. 20, 2001 |
6306719 |
Method for manufacturing a semiconductor device |
Oct. 23, 2001 |
6297090 |
Method for fabricating a high-density semiconductor memory device |
Oct. 2, 2001 |
6294806 |
Semiconductor memory device having silicon-on-insulator (SOI) structure and method for fabricating thereof |
Sep. 25, 2001 |
6242298 |
Semiconductor memory device having epitaxial planar capacitor and method for manufacturing the same |
Jun. 5, 2001 |
6211531 |
Controllable conduction device |
Apr. 3, 2001 |
6169308 |
Semiconductor memory device and manufacturing method thereof |
Jan. 2, 2001 |
6111778 |
Body contacted dynamic memory |
Aug. 29, 2000 |
6077740 |
Method for forming a semiconductor device contact structure comprising a contour |
Jun. 20, 2000 |
6072208 |
Dynamic random access memory fabricated with SOI substrate |
Jun. 6, 2000 |
6060723 |
Controllable conduction device |
May. 9, 2000 |
6015990 |
Semiconductor memory device and method of manufacturing the same |
Jan. 18, 2000 |
5968840 |
Dynamic random access memory using silicon-on-insulator techniques |
Oct. 19, 1999 |
5959322 |
Isolated SOI memory structure with vertically formed transistor and storage capacitor in a substrate |
Sep. 28, 1999 |
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