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Class Information
Number: 257/E27.087
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of individual components in a repetitive configuration (epo) > Including field-effect component (epo) > Dynamic random access memory, dram, structure (epo) > One-transistor memory cell structure, i.e., each memory cell containing only one transistor (epo) > Storage electrode stacked over the transistor > With bit line higher than capacitor (epo)
Description: This subclass is indented under subclass E27.086. This subclass is substantially the same in scope as ECLA classification H01L27/108F2B.

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8674421 Semiconductor device Mar. 18, 2014
8618605 Semiconductor device and method of manufacturing the same Dec. 31, 2013
8470665 Low leakage MIM capacitor Jun. 25, 2013
8436408 Semiconductor device with decoupling capacitor design May. 7, 2013
8368175 Capacitor, semiconductor device having the same, and method of producing them Feb. 5, 2013
8354317 Relaxed-pitch method of aligning active area to digit line Jan. 15, 2013
8212298 Semiconductor storage device and methods of producing it Jul. 3, 2012
8178404 Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same May. 15, 2012
8168538 Buried silicide structure and method for making May. 1, 2012
8049258 Disposable pillars for contact formation Nov. 1, 2011
8013377 Method for producing an integrated circuit and arrangement comprising a substrate Sep. 6, 2011
8004030 Semiconductor device and method for manufacturing the same Aug. 23, 2011
7999294 Semiconductor device which may prevent electrical failures of contacts Aug. 16, 2011
7989362 Hafnium lanthanide oxynitride films Aug. 2, 2011
7977724 Capacitor and method of manufacturing the same comprising a stabilizing member Jul. 12, 2011
7915116 Relaxed-pitch method of aligning active area to digit line Mar. 29, 2011
7795662 Semiconductor memory device and method for fabricating same Sep. 14, 2010
7763542 Semiconductor memory device and method of fabricating the same Jul. 27, 2010
7575992 Method of forming micro patterns in semiconductor devices Aug. 18, 2009
7563730 Hafnium lanthanide oxynitride films Jul. 21, 2009
7544604 Tantalum lanthanide oxynitride films Jun. 9, 2009
7541632 Relaxed-pitch method of aligning active area to digit line Jun. 2, 2009
7517753 Methods of forming pluralities of capacitors Apr. 14, 2009
7485913 Semiconductor memory device and method for fabricating the same Feb. 3, 2009
7476584 Method of fabricating a semiconductor device with a bit line contact plug Jan. 13, 2009
7445990 Methods of forming a plurality of capacitors Nov. 4, 2008
7381613 Self-aligned MIM capacitor process for embedded DRAM Jun. 3, 2008
7345333 Double sided container process used during the manufacture of a semiconductor device Mar. 18, 2008
7304341 Semiconductor device and method for fabricating the same Dec. 4, 2007
7202519 Memory cells having an access transistor with a source/drain region coupled to a capacitor through an extension Apr. 10, 2007
7151291 Capacitor structures, DRAM cell structures, and integrated circuitry, and methods of forming capacitor structures, integrated circuitry and DRAM cell structures Dec. 19, 2006
7145193 Semiconductor integrated circuit device and process for manufacturing the same Dec. 5, 2006
7057225 Semiconductor memory circuitry Jun. 6, 2006
7057285 Aluminum interconnects with metal silicide diffusion barriers Jun. 6, 2006
7042040 Semiconductor device and method for manufacturing the same May. 9, 2006
7037730 Capacitor with high dielectric constant materials and method of making May. 2, 2006
7015528 Reduced aspect ratio digit line contact process flow used during the formation of a semiconductor device Mar. 21, 2006
7009232 Semiconductor memory circuitry including die sites sized for 256M to 275M memory cells in an 8-inch wafer Mar. 7, 2006
6998667 Scalable gate and storage dielectric Feb. 14, 2006
6972223 Use of atomic oxygen process for improved barrier layer Dec. 6, 2005
6967369 Semiconductor memory circuitry Nov. 22, 2005
6963101 Films doped with carbon for use in integrated circuit technology Nov. 8, 2005
6943400 Semiconductor device and its manufacturing method Sep. 13, 2005
6943073 Process for low temperature atomic layer deposition of RH Sep. 13, 2005
6924190 Use of gate electrode workfunction to improve DRAM refresh Aug. 2, 2005
6903398 Semiconductor device and method for manufacturing same Jun. 7, 2005
6900493 Semiconductor memory circuitry May. 31, 2005
6881622 Aqueous ammonium hydroxide amorphous silicon etch method for forming microelectronic capacitor structure Apr. 19, 2005
6878587 Method and structure for reducing contact aspect ratios Apr. 12, 2005
6875667 Method for forming capacitor Apr. 5, 2005

1 2 3 4 5

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