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Class Information
Number: 257/E27.08
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of individual components in a repetitive configuration (epo) > Including bipolar component (epo) > Unijunction transistor, i.e., three terminal device with only one p-n junction having a negative resistance region in the i-v characteristic (epo)
Description: This subclass is indented under subclass E27.072. This subclass is substantially the same in scope as ECLA classification H01L27/102V.

Patents under this class:

Patent Number Title Of Patent Date Issued
7973344 Double gate JFET with reduced area consumption and fabrication method therefor Jul. 5, 2011
7763880 Multi-terminal electrically actuated switch Jul. 27, 2010
6777757 High density semiconductor memory cell and memory array using a single transistor Aug. 17, 2004
4427989 High density memory cell Jan. 24, 1984
4426655 Memory cell resistor device Jan. 17, 1984

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