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Class Information
Number: 257/E27.074
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of individual components in a repetitive configuration (epo) > Including bipolar component (epo) > Including bipolar transistor (epo)
Description: This subclass is indented under subclass E27.072. This subclass is substantially the same in scope as ECLA classification H01L27/102T.










Sub-classes under this class:

Class Number Class Name Patents
257/E27.076 Array of single bipolar transistors only, e.g. read only memory structure (epo) 22
257/E27.075 Bipolar dynamic random access memory structure (epo) 40
257/E27.078 Bipolar electrically programmable memory structure (epo) 88
257/E27.077 Static bipolar memory cell structure (epo) 86


Patents under this class:

Patent Number Title Of Patent Date Issued
RE44140 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns Apr. 9, 2013
8389969 Semiconductor memory using IGBT, insulated gate bipolar transistor, as selective element Mar. 5, 2013
8344481 Bipolar transistors with hump regions Jan. 1, 2013
RE43042 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns Dec. 27, 2011
7982282 High efficiency amplifier with reduced parasitic capacitance Jul. 19, 2011
7719087 Semiconductor device May. 18, 2010
7629628 Bipolar transistor including a base layer containing carbon atoms and having three distinct layers being doped with a trivalent substance Dec. 8, 2009
7605446 Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation Oct. 20, 2009
7473983 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns Jan. 6, 2009
7420228 Bipolar transistor comprising carbon-doped semiconductor Sep. 2, 2008
7265434 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology Sep. 4, 2007
6218722 Antifuse based on silicided polysilicon bipolar transistor Apr. 17, 2001
5920771 Method of making antifuse based on silicided single polysilicon bipolar transistor Jul. 6, 1999
5661681 Semiconductor memory and method of writing, reading, and sustaining data thereof Aug. 26, 1997
5311465 Semiconductor memory device that uses a negative differential resistance May. 10, 1994
4466178 Method of making extremely small area PNP lateral transistor by angled implant of deep trenches followed by refilling the same with dielectrics Aug. 21, 1984
4429326 I.sup.2 L Memory with nonvolatile storage Jan. 31, 1984
4143421 Tetrode transistor memory logic cell Mar. 6, 1979
4130826 Monolithic integrated semiconductor circuit Dec. 19, 1978
4125855 Integrated semiconductor crosspoint arrangement Nov. 14, 1978
4122542 Memory array Oct. 24, 1978











 
 
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