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Class Information
Number: 257/E27.068
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all cmos (epo) > Including field-effect component only (epo) > Schottky barrier gate field-effect transistor (epo)
Description: This subclass is indented under subclass E27.059. This subclass is substantially the same in scope as ECLA classification H01L27/095.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8680587 Schottky diode Mar. 25, 2014
8618582 Edge termination structure employing recesses for edge termination elements Dec. 31, 2013
8604568 Multi-chip package Dec. 10, 2013
8450798 Semiconductor structure with a planar Schottky contact May. 28, 2013
8384181 Schottky diode structure with silicon mesa and junction barrier Schottky wells Feb. 26, 2013
8227867 Body contacted hybrid surface semiconductor-on-insulator devices Jul. 24, 2012
8183558 Compound semiconductor device with T-shaped gate electrode May. 22, 2012
8174048 III-nitride current control device and method of manufacture May. 8, 2012
8138033 Semiconductor component and method of manufacture Mar. 20, 2012
8125008 Schottky device and process of making the same comprising a geometry gap Feb. 28, 2012
8067788 Semiconductor device Nov. 29, 2011
8049223 Semiconductor device with large blocking voltage Nov. 1, 2011
7928480 Semiconductor device Apr. 19, 2011
7875950 Schottky diode structure with multi-portioned guard ring and method of manufacture Jan. 25, 2011
7855098 Method of forming, modifying, or repairing a semiconductor device using field-controlled diffusion Dec. 21, 2010
7851831 Transistor Dec. 14, 2010
7838330 Method of field-controlled diffusion and devices formed thereby Nov. 23, 2010
7821075 CMOS device with zero soft error rate Oct. 26, 2010
7759759 Integrated circuit including a high voltage bipolar device and low voltage devices Jul. 20, 2010
7754550 Process for forming thick oxides on Si or SiC for semiconductor devices Jul. 13, 2010
7692222 Atomic layer deposition in the formation of gate structures for III-V semiconductor Apr. 6, 2010
7655546 Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same Feb. 2, 2010
7651905 Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contacts Jan. 26, 2010
7633135 Bottom anode Schottky diode structure and method Dec. 15, 2009
7612426 Schottky barrier diode and diode array Nov. 3, 2009
7608907 LDMOS gate controlled schottky diode Oct. 27, 2009
7518208 Semiconductor device having power transistors and Schottky barrier diode Apr. 14, 2009
7510953 Integrated fet and schottky device Mar. 31, 2009
7402852 Charge coupled device having a back electrode Jul. 22, 2008
7195996 Method of manufacturing silicon carbide semiconductor device Mar. 27, 2007
7029965 Semiconductor device and manufacturing method thereof Apr. 18, 2006
6987292 Schottky junction transistors and complementary circuits including the same Jan. 17, 2006
6977208 Schottky with thick trench bottom and termination oxide and process for manufacture Dec. 20, 2005
6974737 Schottky barrier CMOS fabrication method Dec. 13, 2005
6887747 Method of forming a MISFET having a schottky junctioned silicide May. 3, 2005
6870232 Scalable MOS field effect transistor Mar. 22, 2005
6864131 Complementary Schottky junction transistors and methods of forming the same Mar. 8, 2005
6770548 Trench schottky rectifier Aug. 3, 2004
6764889 Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes Jul. 20, 2004
6670688 Semiconductor device including at least one schottky metal layer surrounding PN junction Dec. 30, 2003
6630382 Current controlled field effect transistor Oct. 7, 2003
6624493 Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems Sep. 23, 2003
6610999 Multiple stage high power diode Aug. 26, 2003
6580141 Trench schottky rectifier Jun. 17, 2003
6498367 Discrete integrated circuit rectifier device Dec. 24, 2002
6448160 Method of fabricating power rectifier device to vary operating parameters and resulting device Sep. 10, 2002
6440832 Hybrid MOS and schottky gate technology Aug. 27, 2002
6420225 Method of fabricating power rectifier device Jul. 16, 2002
6404033 Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication Jun. 11, 2002
6399996 Schottky diode having increased active surface area and method of fabrication Jun. 4, 2002

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