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Class Information
Number: 257/E27.066
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all cmos (epo) > Including field-effect component only (epo) > Field-effect transistor with insulated gate (epo) > Complementary mis (epo) > Including a p-well only in the substrate (epo)
Description: This subclass is indented under subclass E27.062. This subclass is substantially the same in scope as ECLA classification H01L27/092P.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8704311 Semiconductor device having epitaxial semiconductor layer above impurity layer Apr. 22, 2014
8558297 MRAM cell structure Oct. 15, 2013
8114727 Disposable spacer integration with stress memorization technique and silicon-germanium Feb. 14, 2012
8102007 Apparatus for trimming high-resolution digital-to-analog converter Jan. 24, 2012
7682888 Methods of forming NMOS/PMOS transistors with source/drains including strained materials Mar. 23, 2010
7675055 Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof Mar. 9, 2010
7462543 Flash memory cell transistor with threshold adjust implant and source-drain implant formed using a single mask Dec. 9, 2008
7355218 Semiconductor component with a MOS transistor Apr. 8, 2008
7317223 Memory device and method of manufacturing the same Jan. 8, 2008
6583470 Radiation tolerant back biased CMOS VLSI Jun. 24, 2003
6451676 Method for setting the threshold voltage of a MOS transistor Sep. 17, 2002
6171895 Fabrication of buried channel devices with shallow junction depth Jan. 9, 2001
6160295 CMOS device Dec. 12, 2000
5894155 Metal gate high voltage integrated circuit/process Apr. 13, 1999
5864163 Fabrication of buried channel devices with shallow junction depth Jan. 26, 1999
5624858 Method of manufacturing a semiconductor device with increased breakdown voltage Apr. 29, 1997
5610435 Semiconductor device having an electrode which controls a surface state of the base area for minimizing a change of the D.C. amplification ratio Mar. 11, 1997
5498553 Method of making a metal gate high voltage integrated circuit Mar. 12, 1996
5495124 Semiconductor device with increased breakdown voltage Feb. 27, 1996
5446689 Semiconductor memory having a polycrystalline silicon load resistor and CMOS peripheral circuitry Aug. 29, 1995
5420062 Method of manufacturing an insulated gate FET having double-layered wells of low and high impurity concentrations May. 30, 1995
5382820 High voltage CMOS device to integrate low voltage controlling device Jan. 17, 1995
5359562 Semiconductor memory having polycrystalline silicon load resistors and CMOS peripheral circuitry Oct. 25, 1994
5342803 Method for isolating circuit elements for semiconductor device Aug. 30, 1994
5317175 CMOS device with perpendicular channel current directions May. 31, 1994
5268323 Semiconductor array and method for its manufacture Dec. 7, 1993
5260594 Semiconductor device reducing internal noises and integrated circuit employing the same Nov. 9, 1993
5220191 Semiconductor device having a well electrically insulated from the substrate Jun. 15, 1993
5124763 Insulated-gate type integrated circuit Jun. 23, 1992
5115297 Complementary type semiconductor integrated circuit device May. 19, 1992
5083179 CMOS semiconductor integrated circuit device Jan. 21, 1992
5028556 Process for fabricating radiation hard high voltage devices Jul. 2, 1991
4954871 Semiconductor device with composite electrode Sep. 4, 1990
4920399 Conductance-modulated integrated transistor structure Apr. 24, 1990
4920066 Process for fabricating a high-speed CMOS TTL semiconductor device Apr. 24, 1990
4872045 Input protection device for C-MOS device Oct. 3, 1989
4866002 Complementary insulated-gate field effect transistor integrated circuit and manufacturing method thereof Sep. 12, 1989
4857986 Short channel CMOS on 110 crystal plane Aug. 15, 1989
4829359 CMOS device having reduced spacing between N and P channel May. 9, 1989
4827325 Protective optical coating and method for use thereof May. 2, 1989
4812889 Semiconductor device FET with reduced energy level degeneration Mar. 14, 1989
4769686 Semiconductor device Sep. 6, 1988
4670672 C-MOS logic circuit supplied with narrow width pulses converted from input pulses Jun. 2, 1987
H64 Full-wave rectifier for CMOS IC chip May. 6, 1986
4549198 Semiconductor device Oct. 22, 1985
4533932 Semiconductor device with enlarged corners to provide enhanced punch through protection Aug. 6, 1985
4523216 CMOS device with high density wiring layout Jun. 11, 1985
4458262 CMOS Device with ion-implanted channel-stop region and fabrication method therefor Jul. 3, 1984
4373253 Integrated CMOS process with JFET Feb. 15, 1983
4366556 Semiconductor memory device Dec. 28, 1982

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