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Class Information
Number: 257/E27.064
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all cmos (epo) > Including field-effect component only (epo) > Field-effect transistor with insulated gate (epo) > Complementary mis (epo) > Combination of complementary transistors having a different structure, e.g. stacked cmos, high-voltage and low-voltage cmos (epo)
Description: This subclass is indented under subclass E27.062. This subclass is substantially the same in scope as ECLA classification H01L27/092D.

Patents under this class:
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Patent Number Title Of Patent Date Issued
5747855 CMOS integrated circuitry with Halo and LDD regions May. 5, 1998
5747850 Extended drain resurf lateral DMOS devices May. 5, 1998
5736440 Semiconductor processing method of forming complementary NMOS and PMOS field effect transistors on a substrate Apr. 7, 1998
5736439 Method for forming a semiconductor device in which the insulating layer is heated to contract after crystallization of the semiconductor layer Apr. 7, 1998
5731233 Semiconductor device having MOS transistor and method of manufacturing the same Mar. 24, 1998
5731628 Semiconductor device having element with high breakdown voltage Mar. 24, 1998
5712173 Method of making semiconductor device with self-aligned insulator Jan. 27, 1998
5698457 Method for manufacturing high voltage semiconductor device Dec. 16, 1997
5696008 Semiconductor device and method of manufacturing the same Dec. 9, 1997
5688722 CMOS integrated circuit with reduced susceptibility to PMOS punchthrough Nov. 18, 1997
5684320 Semiconductor device having transistor pair Nov. 4, 1997
5683927 Method of forming CMOS integrated circuitry Nov. 4, 1997
5682051 CMOS integrated circuit with reduced susceptibility to PMOS punchthrough Oct. 28, 1997
5677224 Method of making asymmetrical N-channel and P-channel devices Oct. 14, 1997
5674763 Method of manufacturing a semiconductor device Oct. 7, 1997
5672524 Three-dimensional complementary field effect transistor process Sep. 30, 1997
5670810 Semiconductor device with a vertical field effect transistor Sep. 23, 1997
5650653 Microelectronic integrated circuit including triangular CMOS "nand" gate device Jul. 22, 1997
5640040 High breakdown voltage semiconductor device Jun. 17, 1997
5637903 Depleted gate transistor for high voltage operation Jun. 10, 1997
5635753 Integrated circuit Jun. 3, 1997
5631178 Method for forming a stable semiconductor device having an arsenic doped ROM portion May. 20, 1997
5620920 Process for fabricating a CMOS structure with ESD protection Apr. 15, 1997
5618740 Method of making CMOS output buffer with enhanced ESD resistance Apr. 8, 1997
5616935 Semiconductor integrated circuit having N-channel and P-channel transistors Apr. 1, 1997
5614432 Method for manufacturing LDD type MIS device Mar. 25, 1997
5614433 Method of fabricating low leakage SOI integrated circuits Mar. 25, 1997
5610421 Integrated circuit with EPROM cells Mar. 11, 1997
5610089 Method of fabrication of semiconductor integrated circuit device Mar. 11, 1997
5604137 Method for forming a multilayer integrated circuit Feb. 18, 1997
5602416 Power integrated circuit ("PIC") structure Feb. 11, 1997
5595923 Method of forming a thin film transistor Jan. 21, 1997
5592014 High breakdown voltage semiconductor device Jan. 7, 1997
5591662 Method of manufacturing a power integrated circuit (PIC) structure Jan. 7, 1997
5583368 Stacked devices Dec. 10, 1996
5580805 Semiconductor device having various threshold voltages and manufacturing same Dec. 3, 1996
5578855 High-voltage CMOS transistors on a standard CMOS wafer Nov. 26, 1996
5569936 Semiconductor device employing crystallization catalyst Oct. 29, 1996
5563440 Semiconductor device and method for forming the same Oct. 8, 1996
5559353 Integrated circuit structure having at least one CMOS-NAND gate and method for the manufacture thereof Sep. 24, 1996
5559042 Method of fabricating a thin film semiconductor device using an insulating film which contracts when thermally treated Sep. 24, 1996
5557147 Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same Sep. 17, 1996
5554871 Semiconductor device having MOS transistor with nitrogen doping Sep. 10, 1996
5550396 Vertical field effect transistor with a trench structure Aug. 27, 1996
5547885 Method of making asymmetric LDD transistor Aug. 20, 1996
5541431 Semiconductor device having transistor pair Jul. 30, 1996
5536961 High breakdown voltage semiconductor device Jul. 16, 1996
5534723 Semiconductor integrated circuit device having output and internal circuit MISFETS Jul. 9, 1996
5535158 Non-volatile semiconductor memory device and method for erasure and production thereof Jul. 9, 1996
5534449 Methods of forming complementary metal oxide semiconductor (CMOS) integrated circuitry Jul. 9, 1996

1 2 3 4 5 6 7 8 9 10 11

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