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Class Information
Number: 257/E27.064
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all cmos (epo) > Including field-effect component only (epo) > Field-effect transistor with insulated gate (epo) > Complementary mis (epo) > Combination of complementary transistors having a different structure, e.g. stacked cmos, high-voltage and low-voltage cmos (epo)
Description: This subclass is indented under subclass E27.062. This subclass is substantially the same in scope as ECLA classification H01L27/092D.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
6670694 Semiconductor device Dec. 30, 2003
6661061 Integrated circuit with differing gate oxide thickness Dec. 9, 2003
6642543 Thin and thick gate oxide transistors on a functional block of a CMOS circuit residing within the core of an IC chip Nov. 4, 2003
6621125 Buried channel device structure Sep. 16, 2003
6611027 Protection transistor with improved edge structure Aug. 26, 2003
6603179 Semiconductor apparatus including CMOS circuits and method for fabricating the same Aug. 5, 2003
6596575 High voltage breakdown isolation semiconductor device and manufacturing process for making the device Jul. 22, 2003
6589829 Semiconductor device and method for forming the same Jul. 8, 2003
6541819 Semiconductor device having non-power enhanced and power enhanced metal oxide semiconductor devices and a method of manufacture therefor Apr. 1, 2003
6538278 CMOS integrated circuit having PMOS and NMOS devices with different gate dielectric layers Mar. 25, 2003
6518628 Integrated CMOS circuit configuration, and production of same Feb. 11, 2003
6504218 Asymmetrical N-channel and P-channel devices Jan. 7, 2003
6501139 High-voltage transistor and fabrication process Dec. 31, 2002
6492671 CMOS process Dec. 10, 2002
6492685 Semiconductor device having a pair of N-channel TFT and P-channel TFT Dec. 10, 2002
6492693 Low voltage high performance semiconductor devices and methods Dec. 10, 2002
6479338 CMOS device and method of manufacturing the same Nov. 12, 2002
6469346 High-breakdown-voltage semiconductor device Oct. 22, 2002
6468860 Integrated circuit capable of operating at two different power supply voltages Oct. 22, 2002
6462585 High performance CPL double-gate latch Oct. 8, 2002
6451640 Semiconductor device having NMOS and PMOS transistors on common substrate and method of fabricating the same Sep. 17, 2002
6433395 Electrostatic discharge protection for salicided devices Aug. 13, 2002
6410377 Method for integrating CMOS sensor and high voltage device Jun. 25, 2002
6406955 Method for manufacturing CMOS devices having transistors with mutually different punch-through voltage characteristics Jun. 18, 2002
6403992 Complementary metal-oxide semiconductor device Jun. 11, 2002
6404026 Semiconductor devices Jun. 11, 2002
6380594 Semiconductor device Apr. 30, 2002
6380015 MOSFETs with improved short channel effects and method of making the same Apr. 30, 2002
6380004 Process for manufacturing radhard power integrated circuit Apr. 30, 2002
6376891 High voltage breakdown isolation semiconductor device and manufacturing process for making the device Apr. 23, 2002
6373106 Semiconductor device and method for fabricating the same Apr. 16, 2002
6362038 Low and high voltage CMOS devices and process for fabricating same Mar. 26, 2002
6358787 Method of forming CMOS integrated circuitry Mar. 19, 2002
6355962 CMOS FET with P-well with P- type halo under drain and counterdoped N- halo under source region Mar. 12, 2002
6348719 Using a change in doping of poly gate to permit placing both high voltage and low voltage transistors on the same chip Feb. 19, 2002
6342412 Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same Jan. 29, 2002
6337236 Semiconductor device and method for forming the same Jan. 8, 2002
6323539 High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor Nov. 27, 2001
6312997 Low voltage high performance semiconductor devices and methods Nov. 6, 2001
RE37424 Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high suppl Oct. 30, 2001
6287906 Semiconductor device having MOS transistor and method of manufacturing the same Sep. 11, 2001
6262456 Integrated circuit having transistors with different threshold voltages Jul. 17, 2001
6261888 Method of forming CMOS integrated circuitry Jul. 17, 2001
6242759 Semiconductor device and method for forming the same Jun. 5, 2001
6222238 Low voltage CMOS process and device with individually adjustable LDD spacers Apr. 24, 2001
6211001 Electrostatic discharge protection for salicided devices and method of making same Apr. 3, 2001
6208010 Semiconductor memory device Mar. 27, 2001
6187620 Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctions Feb. 13, 2001
6184558 Comparator having reduced offset voltage Feb. 6, 2001

1 2 3 4 5 6 7 8 9 10 11

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