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Class Information
Number: 257/E27.062
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all cmos (epo) > Including field-effect component only (epo) > Field-effect transistor with insulated gate (epo) > Complementary mis (epo)
Description: This subclass is indented under subclass E27.06. This subclass is substantially the same in scope as ECLA classification H01L27/092.

Sub-classes under this class:

Class Number Class Name Patents
257/E27.064 Combination of complementary transistors having a different structure, e.g. stacked cmos, high-voltage and low-voltage cmos (epo) 504
257/E27.066 Including a p-well only in the substrate (epo) 74
257/E27.065 Including an n-well only in the substrate (epo) 62
257/E27.067 Including both n- and p- wells in the substrate, e.g. twin-tub (epo) 437
257/E27.063 Means for preventing a parasitic bipolar action between the different transistor regions, e.g. latch-up prevention (epo) 297

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Patent Number Title Of Patent Date Issued
8703569 MOS transistor, manufacturing method thereof, and semiconductor device Apr. 22, 2014
8704311 Semiconductor device having epitaxial semiconductor layer above impurity layer Apr. 22, 2014
8691654 Semiconductor device having stressor film and method of manufacturing semiconductor device Apr. 8, 2014
8692332 Strained-silicon transistor and method of making the same Apr. 8, 2014
8686512 Elevation of transistor channels to reduce impact of shallow trench isolation on transistor performance Apr. 1, 2014
8680629 Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices Mar. 25, 2014
8680584 MOS transistor structure with easy access to all nodes Mar. 25, 2014
8679950 Manufacturing method for semiconductor device having side by side different fins Mar. 25, 2014
8673755 Semiconductor device having metal gate and manufacturing method thereof Mar. 18, 2014
8673757 Structure and method for using high-k material as an etch stop layer in dual stress layer process Mar. 18, 2014
8674402 Power semiconductor device and methods for fabricating the same Mar. 18, 2014
8674453 Mechanisms for forming stressor regions in a semiconductor device Mar. 18, 2014
8669596 Semiconductor device Mar. 11, 2014
8669620 Semiconductor device and method of manufacturing the same Mar. 11, 2014
8658483 Method of fabricating an integrated circuit device having backside bevel protection Feb. 25, 2014
8658489 Method for dual work function metal gate CMOS with selective capping Feb. 25, 2014
8652956 High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning Feb. 18, 2014
8643115 Structure and method of T.sub.inv scaling for high .kappa. metal gate technology Feb. 4, 2014
8643116 Semiconductor device Feb. 4, 2014
8643113 Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer Feb. 4, 2014
8629039 Substrate fins with different heights Jan. 14, 2014
8624295 SRAM devices utilizing strained-channel transistors and methods of manufacture Jan. 7, 2014
8624325 Semiconductor device and method of manufacturing the same Jan. 7, 2014
8624326 FinFET device and method of manufacturing same Jan. 7, 2014
8610236 Edge devices layout for improved performance Dec. 17, 2013
8610219 Semiconductor device having a memory cell section, an adjacent circuit section, and silicide formed on an impurity diffused region Dec. 17, 2013
8604554 Semiconductor device Dec. 10, 2013
8604553 Semiconductor device and manufacturing method thereof Dec. 10, 2013
8603916 CMP techniques for overlapping layer removal Dec. 10, 2013
8598663 Semiconductor structure having NFET and PFET formed in SOI substrate with underlapped extensions Dec. 3, 2013
8598666 Semiconductor structure and method for manufacturing the same Dec. 3, 2013
8592922 Transistor device and a method of manufacturing the same Nov. 26, 2013
8580632 Semiconductor device and method of manufacturing same Nov. 12, 2013
8581309 Semiconductor device Nov. 12, 2013
8569841 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least one gate level feature extending into adjacent gate Oct. 29, 2013
8564066 Interface-free metal gate stack Oct. 22, 2013
8552509 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with other transistors positioned between cross-coupled transisto Oct. 8, 2013
8552507 Semiconductor device and method of manufacturing the same Oct. 8, 2013
8552506 Semiconductor device and method of manufacturing the same Oct. 8, 2013
8546886 Controlling the device performance by forming a stressed backside dielectric layer Oct. 1, 2013
8546887 Semiconductor devices Oct. 1, 2013
8541814 Minimizing leakage current and junction capacitance in CMOS transistors by utilizing dielectric spacers Sep. 24, 2013
8536653 Metal oxide semiconductor transistor Sep. 17, 2013
8536654 Structure and method for dual work function metal gate CMOS with selective capping Sep. 17, 2013
8530974 CMOS structure having multiple threshold voltage devices Sep. 10, 2013
8524588 Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process Sep. 3, 2013
8513740 Complementary metal oxide semiconductor device having metal gate stack structure and method of manufacturing the same Aug. 20, 2013
8507994 Semiconductor device Aug. 13, 2013
8501558 Semiconductor device and manufacturing method of the same Aug. 6, 2013
8502317 Level shifter circuits for integrated circuits Aug. 6, 2013

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

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