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Class Information
Number: 257/E27.061
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all cmos (epo) > Including field-effect component only (epo) > Field-effect transistor with insulated gate (epo) > Combination of depletion and enhancement field-effect transistors (epo)
Description: This subclass is indented under subclass E27.06. This subclass is substantially the same in scope as ECLA classification H01L27/088D.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7087967 LSI device having core and interface regions with SOI layers of different thickness Aug. 8, 2006
6969875 Buried channel strained silicon FET using a supply layer created through ion implantation Nov. 29, 2005
6930361 Semiconductor device realizing characteristics like a SOI MOSFET Aug. 16, 2005
6919600 Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact Jul. 19, 2005
6740942 Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact May. 25, 2004
6703670 Depletion-mode transistor that eliminates the need to separately set the threshold voltage of the depletion-mode transistor Mar. 9, 2004
6653694 Reference voltage semiconductor Nov. 25, 2003
6593191 Buried channel strained silicon FET using a supply layer created through ion implantation Jul. 15, 2003
6555839 Buried channel strained silicon FET using a supply layer created through ion implantation Apr. 29, 2003
6500715 Method of forming a CMOS structure having gate insulation films of different thicknesses Dec. 31, 2002
6307236 Semiconductor integrated circuit device Oct. 23, 2001
6200838 Compound semiconductor device and method of manufacturing the same Mar. 13, 2001
5923984 Method of making enhancement-mode and depletion-mode IGFETS with different gate materials Jul. 13, 1999
5514610 Method of making an optimized code ion implantation procedure for read only memory devices May. 7, 1996
5382819 Semiconductor device having MOS source follower circuit Jan. 17, 1995
5371418 Drive circuit for a power MOSFET with load at the source side Dec. 6, 1994
5323048 MIS type semiconductor ROM programmed by conductive interconnects Jun. 21, 1994
5311115 Enhancement-depletion mode cascode current mirror May. 10, 1994
5245207 Integrated circuit Sep. 14, 1993
5229633 High voltage lateral enhancement IGFET Jul. 20, 1993
5135880 Method of manufacturing a semiconductor device Aug. 4, 1992
5077586 VDMOS/logic integrated circuit comprising a diode Dec. 31, 1991
5045902 VDMOS/logic integrated circuit comprising a vertical depleted MOS transistor and a zener diode and a method of making same Sep. 3, 1991
5038188 Insulated-gate type transistor and semiconductor integrated circuit using such transistor Aug. 6, 1991
5021356 Method of making MOSFET depletion device Jun. 4, 1991
4994872 Insulated gate static induction transistor and integrated circuit including same Feb. 19, 1991
4939571 Insulated-gate type transistor and semiconductor integrated circuit using such transistor Jul. 3, 1990
4814839 Insulated gate static induction transistor and integrated circuit including same Mar. 21, 1989
4803530 Semiconductor integrated circuit formed on an insulator substrate Feb. 7, 1989
4740714 Enhancement-depletion CMOS circuit with fixed output Apr. 26, 1988
4733283 GaAs semiconductor device Mar. 22, 1988
4663643 Semiconductor device and process for producing the same May. 5, 1987
4644386 Integrated circuit employing insulated gate electrostatic induction transistor Feb. 17, 1987
4635343 Method of manufacturing GaAs semiconductor device Jan. 13, 1987
4622570 Semiconductor memory Nov. 11, 1986
4606113 Method of manufacturing metal-semiconductor field effect transistors using orientation dependent etched recesses of different depths Aug. 19, 1986
4583011 Circuit to prevent pirating of an MOS circuit Apr. 15, 1986
4578694 Inverter circuit provided with gate protection Mar. 25, 1986
4570237 Microprocessor Feb. 11, 1986
4554644 Static RAM cell Nov. 19, 1985
4451744 Monolithic integrated reference voltage source May. 29, 1984
4417263 Semiconductor device Nov. 22, 1983
4395646 Logic performing cell for use in array structures Jul. 26, 1983
4346344 Stable field effect transistor voltage reference Aug. 24, 1982
4329186 Simultaneously forming fully implanted DMOS together with enhancement and depletion mode MOSFET devices May. 11, 1982
4239980 Integrated circuit having an operation voltage supplying depletion type MISFET of high breakdown voltage structure Dec. 16, 1980
4228447 Submicron channel length MOS inverter with depletion-mode load transistor Oct. 14, 1980
4219828 Multidrain metal-oxide-semiconductor field-effect Aug. 26, 1980
4218693 Integrated logic circuit having interconnections of various lengths between field effect transistors of enhancement and depletion modes Aug. 19, 1980
4206005 Method of making split gate LSI VMOSFET Jun. 3, 1980

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