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Class Information
Number: 257/E27.06
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all cmos (epo) > Including field-effect component only (epo) > Field-effect transistor with insulated gate (epo)
Description: This subclass is indented under subclass E27.059. This subclass is substantially the same in scope as ECLA classification H01L27/088.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618869 |
Manufacturing method for increasing product yield of memory devices suffering from source/drain junction leakage |
Nov. 17, 2009 |
| 7615820 |
Self-aligned trenches with grown dielectric for high coupling ratio in semiconductor devices |
Nov. 10, 2009 |
| 7608895 |
Modular CMOS analog integrated circuit and power technology |
Oct. 27, 2009 |
| 7560780 |
Active region spacer for semiconductor devices and method to form the same |
Jul. 14, 2009 |
| 7554139 |
Semiconductor manufacturing method and semiconductor device |
Jun. 30, 2009 |
| 7550809 |
Semiconductor integrated circuit device having deposited layer for gate insulation |
Jun. 23, 2009 |
| 7535064 |
Semiconductor device having a fin and method of manufacturing the same |
May. 19, 2009 |
| 7531880 |
Semiconductor device and manufacturing method thereof |
May. 12, 2009 |
| 7531853 |
Semiconductor device and manufacturing method of the same |
May. 12, 2009 |
| 7525160 |
Multigate device with recessed strain regions |
Apr. 28, 2009 |
| 7514728 |
Semiconductor integrated circuit device using four-terminal transistors |
Apr. 7, 2009 |
| 7510922 |
Spacer T-gate structure for CoSi.sub.2 extendibility |
Mar. 31, 2009 |
| 7504696 |
CMOS with dual metal gate |
Mar. 17, 2009 |
| 7482670 |
Enhancing strained device performance by use of multi narrow section layout |
Jan. 27, 2009 |
| 7442995 |
Semiconductor device and method of manufacturing the same |
Oct. 28, 2008 |
| 7423330 |
Semiconductor device with strain |
Sep. 9, 2008 |
| 7422953 |
Semiconductor device and method of manufacturing the same |
Sep. 9, 2008 |
| 7411252 |
Substrate backgate for trigate FET |
Aug. 12, 2008 |
| 7408226 |
Electronic card with protection against aerial discharge |
Aug. 5, 2008 |
| 7402873 |
Semiconductor integrated circuit device having deposited layer for gate insulation |
Jul. 22, 2008 |
| 7382027 |
MOSFET device with low gate contact resistance |
Jun. 3, 2008 |
| 7378712 |
Gate stacks |
May. 27, 2008 |
| 7355253 |
Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates |
Apr. 8, 2008 |
| 7355221 |
Field effect transistor having an asymmetrically stressed channel region |
Apr. 8, 2008 |
| 7339232 |
Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same |
Mar. 4, 2008 |
| 7332774 |
Multiple-gate MOS transistor and a method of manufacturing the same |
Feb. 19, 2008 |
| 7332806 |
Thin, thermally enhanced molded package with leadframe having protruding region |
Feb. 19, 2008 |
| 7268401 |
Semiconductor integrated circuit device having deposited layer for gate insulation |
Sep. 11, 2007 |
| 7253484 |
Low-power multiple-channel fully depleted quantum well CMOSFETs |
Aug. 7, 2007 |
| 7230296 |
Self-aligned low-k gate cap |
Jun. 12, 2007 |
| 7227234 |
Embedded non-volatile memory cell with charge-trapping sidewall spacers |
Jun. 5, 2007 |
| 7214992 |
Multi-source, multi-gate MOS transistor with a drain region that is wider than the source regions |
May. 8, 2007 |
| 7208380 |
Interface improvement by stress application during oxide growth through use of backside films |
Apr. 24, 2007 |
| 7183614 |
Semiconductor device and method of manufacture thereof |
Feb. 27, 2007 |
| 7176090 |
Method for making a semiconductor device that includes a metal gate electrode |
Feb. 13, 2007 |
| 7138324 |
Method of inhibiting degradation of gate oxide film |
Nov. 21, 2006 |
| 7112851 |
Field effect transistor with electroplated metal gate |
Sep. 26, 2006 |
| 7067878 |
Field effect transistor |
Jun. 27, 2006 |
| 7056798 |
Semiconductor device, method for manufacturing the same, and liquid jet apparatus |
Jun. 6, 2006 |
| 7049850 |
Semiconductor device with a voltage detecting device to prevent shoot-through phenomenon in first and second complementary switching devices |
May. 23, 2006 |
| 7045856 |
Semiconductor device |
May. 16, 2006 |
| 7042007 |
Semiconductor device and method for evaluating characteristics of the same |
May. 9, 2006 |
| 7033877 |
Vertical replacement-gate junction field-effect transistor |
Apr. 25, 2006 |
| 7030445 |
Power MOSFET, power MOSFET packaged device, and method of manufacturing power MOSFET |
Apr. 18, 2006 |
| 7022566 |
Integrated radio frequency circuits |
Apr. 4, 2006 |
| 7023053 |
Differential transistor pair |
Apr. 4, 2006 |
| 7019337 |
Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switchin |
Mar. 28, 2006 |
| 7019342 |
Double-gated transistor circuit |
Mar. 28, 2006 |
| 7015105 |
Method of simultaneously making a pair of transistors with insulated gates having respectively a thin oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of tr |
Mar. 21, 2006 |
| 7015547 |
Multi-configurable independently multi-gated MOSFET |
Mar. 21, 2006 |
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