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Class Information
Number: 257/E27.059
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all cmos (epo) > Including field-effect component only (epo)
Description: This subclass is indented under subclass E27.046. This subclass is substantially the same in scope as ECLA classification H01L27/085.










Sub-classes under this class:

Class Number Class Name Patents
257/E27.06 Field-effect transistor with insulated gate (epo) 902
257/E27.069 Pn junction gate field-effect transistor 59
257/E27.068 Schottky barrier gate field-effect transistor (epo) 109


Patents under this class:
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Patent Number Title Of Patent Date Issued
8455929 Formation of III-V based devices on semiconductor substrates Jun. 4, 2013
8421126 Double-sided integrated circuit chips Apr. 16, 2013
8373239 Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric Feb. 12, 2013
8362574 Faceted EPI shape and half-wrap around silicide in S/D merged FinFET Jan. 29, 2013
8354698 VDMOS and JFET integrated semiconductor device Jan. 15, 2013
8344426 Semiconductor device and design method thereof Jan. 1, 2013
8212311 Semiconductor device having increased gate length implemented by surround gate transistor arrangements Jul. 3, 2012
8030159 Method of fabricating EEPROM Oct. 4, 2011
8022475 Semiconductor device optimized to increase withstand voltage and reduce on resistance Sep. 20, 2011
7888712 Semiconductor device and method for manufacturing same Feb. 15, 2011
7871907 Mask and method of fabricating a polysilicon layer using the same Jan. 18, 2011
7868391 3-D single gate inverter Jan. 11, 2011
7754572 Semiconductor device and a method of manufacturing thereof Jul. 13, 2010
7714395 Static random access memory and fabricating method thereof May. 11, 2010
7687834 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 30, 2010
7683414 Semiconductor device, its manufacturing method and electronic apparatus thereof Mar. 23, 2010
6831331 Power MOS transistor for absorbing surge current Dec. 14, 2004
6373318 Electronic switching device having at least two semiconductor components Apr. 16, 2002
6242787 Semiconductor device and manufacturing method thereof Jun. 5, 2001
6157049 Electronic device, in particular for switching electric currents, for high reverse voltages and with low on-state losses Dec. 5, 2000
6153453 JFET transistor manufacturing method Nov. 28, 2000
5989947 Method for the manufacture of quantum structures, in particular quantum dots and tunnel barriers as well as components with such quantum structures Nov. 23, 1999
5973377 Semiconductor device having FETs with shared source and drain regions Oct. 26, 1999
5945699 Reduce width, differentially doped vertical JFET device Aug. 31, 1999
5670393 Method of making combined metal oxide semiconductor and junction field effect transistor device Sep. 23, 1997
5606184 Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making Feb. 25, 1997
5561300 Atomic switching devices and logical circuits Oct. 1, 1996
5396085 Silicon carbide switching device with rectifying-gate Mar. 7, 1995
5341007 Semiconductor device and a method for fabricating the same Aug. 23, 1994
5313082 High voltage MOS transistor with a low on-resistance May. 17, 1994
5286986 Semiconductor device having CCD and its peripheral bipolar transistors Feb. 15, 1994
5241197 Transistor provided with strained germanium layer Aug. 31, 1993
5100831 Method for fabricating semiconductor device Mar. 31, 1992
5087889 Area efficient cascode driver circuit Feb. 11, 1992
5060031 Complementary heterojunction field effect transistor with an anisotype N+ g a -channel devices Oct. 22, 1991
5005059 Digital-to-analog converting field effect device and circuitry Apr. 2, 1991
4811075 High voltage MOS transistors Mar. 7, 1989
4791072 Method for making a complementary device containing MODFET Dec. 13, 1988
4700213 Multi-drain enhancement JFET logic (SITL) with complementary MOSFET load Oct. 13, 1987
4654548 Complementary logic circuit Mar. 31, 1987
4612629 Highly scalable dynamic RAM cell with self-signal amplification Sep. 16, 1986
4609835 Semiconductor integrated circuit Sep. 2, 1986
4546370 Monolithic integration of logic, control and high voltage interface circuitry Oct. 8, 1985
4459684 Nonvolatile JRAM cell using nonvolatile capacitance for information retrieval Jul. 10, 1984
4449142 Semiconductor memory device May. 15, 1984
4448400 Highly scalable dynamic RAM cell with self-signal amplification May. 15, 1984
4442448 Logic integrated circuit device Apr. 10, 1984
4435785 Unipolar voltage non-volatile JRAM cell Mar. 6, 1984
4417325 Highly scaleable dynamic ram cell with self-signal amplification Nov. 22, 1983
4409725 Method of making semiconductor integrated circuit Oct. 18, 1983

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