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Class Information
Number: 257/E27.054
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all cmos (epo) > Bipolar component only (epo) > Combination of lateral and vertical transistors only (epo)
Description: This subclass is indented under subclass E27.053. This subclass is substantially the same in scope as ECLA classification H01L27/082L.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7586130 |
Vertical field effect transistor using linear structure as a channel region and method for fabricating the same |
Sep. 8, 2009 |
| 7569910 |
Multiple-transistor structure systems and methods in which portions of a first transistor and a second transistor are formed from the same layer |
Aug. 4, 2009 |
| 7242050 |
Stacked gate memory cell with erase to gate, array, and method of manufacturing |
Jul. 10, 2007 |
| 7196367 |
Spin polarization amplifying transistor |
Mar. 27, 2007 |
| 7067899 |
Semiconductor integrated circuit device |
Jun. 27, 2006 |
| 6943426 |
Complementary analog bipolar transistors with trench-constrained isolation diffusion |
Sep. 13, 2005 |
| 6815801 |
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer |
Nov. 9, 2004 |
| 6518139 |
Power semiconductor device structure with vertical PNP transistor |
Feb. 11, 2003 |
| 6441437 |
Integrated semiconductor circuit with protective structure for protection against electrostatic discharge |
Aug. 27, 2002 |
| 6291303 |
Method for manufacturing a bipolar junction device |
Sep. 18, 2001 |
| 6150225 |
Method for fabricating a semiconductor device having vertical and lateral type bipolar transistors |
Nov. 21, 2000 |
| 6060762 |
Integrated structure with reduced injection of current between homologous regions |
May. 9, 2000 |
| 5914522 |
Power semiconductor structure with lateral transistor driven by vertical transistor |
Jun. 22, 1999 |
| 5763934 |
Integrated electronic device with reduced parasitic currents, and corresponding methods |
Jun. 9, 1998 |
| 5679587 |
Method of fabricating an integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistors |
Oct. 21, 1997 |
| 5670821 |
Guard ring for mitigation of parasitic transistors in junction isolated integrated circuits |
Sep. 23, 1997 |
| 5650657 |
Protection from short circuits between P and N wells |
Jul. 22, 1997 |
| 5565701 |
Integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistors |
Oct. 15, 1996 |
| 5545918 |
Circuit construction for controlling saturation of a transistor |
Aug. 13, 1996 |
| 5508551 |
Current mirror with saturation limiting |
Apr. 16, 1996 |
| 5508553 |
Transversal bipolar transistor integrated with another transistor commonly provided on a semiconductor substrate |
Apr. 16, 1996 |
| 5418386 |
Circuit construction for controlling saturation of a transistor |
May. 23, 1995 |
| 5382837 |
Switching circuit for semiconductor device |
Jan. 17, 1995 |
| 5372955 |
Method of making a device with protection from short circuits between P and N wells |
Dec. 13, 1994 |
| 5329147 |
High voltage integrated flyback circuit in 2 .mu.m CMOS |
Jul. 12, 1994 |
| 5287047 |
Motor drive circuit and motor drive system using the same |
Feb. 15, 1994 |
| 5262689 |
BIMOS current driver circuit |
Nov. 16, 1993 |
| 5237198 |
Lateral PNP transistor using a latch voltage of NPN transistor |
Aug. 17, 1993 |
| 5229711 |
Reference voltage generating circuit |
Jul. 20, 1993 |
| 5221855 |
Monolithic vertical-type semiconductor power device with a protection against parasitic currents |
Jun. 22, 1993 |
| 5204543 |
Lateral type semiconductor device having a structure for eliminating turning-on of parasitic MOS transistors formed therein |
Apr. 20, 1993 |
| 5179432 |
Integrated PNP power bipolar transistor with low injection into substrate |
Jan. 12, 1993 |
| 5066869 |
Reset circuit with PNP saturation detector |
Nov. 19, 1991 |
| 4949212 |
Circuit configuration for protecting an integrated circuit |
Aug. 14, 1990 |
| 4936928 |
Semiconductor device |
Jun. 26, 1990 |
| 4886985 |
Transistor arrangement with an output transistor |
Dec. 12, 1989 |
| 4886982 |
Power transistor with improved resistance to direct secondary breakdown |
Dec. 12, 1989 |
| 4714842 |
Integrated injection logic circuits |
Dec. 22, 1987 |
| 4712152 |
Semiconductor integrated circuit device |
Dec. 8, 1987 |
| 4710793 |
Voltage comparator with hysteresis |
Dec. 1, 1987 |
| 4654543 |
Thyristor with "on" protective circuit and darlington output stage |
Mar. 31, 1987 |
| 4613887 |
Semiconductor device with a means for discharging carriers |
Sep. 23, 1986 |
| 4595942 |
Integrated circuit |
Jun. 17, 1986 |
| 4577397 |
Method for manufacturing a semiconductor device having vertical and lateral transistors |
Mar. 25, 1986 |
| 4558286 |
Symmetrical diode clamp |
Dec. 10, 1985 |
| 4542399 |
Feed forward Darlington circuit |
Sep. 17, 1985 |
| 4492008 |
Methods for making high performance lateral bipolar transistors |
Jan. 8, 1985 |
| 4475280 |
Method of making an integrated circuit incorporating low voltage and high voltage semiconductor devices |
Oct. 9, 1984 |
| 4466011 |
Device for protection against leakage currents in integrated circuits |
Aug. 14, 1984 |
| 4446611 |
Method of making a saturation-limited bipolar transistor device |
May. 8, 1984 |
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