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Class Information
Number: 257/E27.053
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all cmos (epo) > Bipolar component only (epo)
Description: This subclass is indented under subclass E27.046. This subclass is substantially the same in scope as ECLA classification H01L27/082.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622357 |
Semiconductor device structures with backside contacts for improved heat dissipation and reduced parasitic resistance |
Nov. 24, 2009 |
| 7622756 |
Semiconductor device and radio communication device |
Nov. 24, 2009 |
| 7612430 |
Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor |
Nov. 3, 2009 |
| 7605445 |
Sealed nitride layer for integrated circuits |
Oct. 20, 2009 |
| 7605446 |
Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation |
Oct. 20, 2009 |
| 7582536 |
Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same |
Sep. 1, 2009 |
| 7531851 |
Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same |
May. 12, 2009 |
| 7482642 |
Bipolar transistors having controllable temperature coefficient of current gain |
Jan. 27, 2009 |
| 7473983 |
Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns |
Jan. 6, 2009 |
| 7442595 |
Bipolar transistor with collector having an epitaxial Si:C region |
Oct. 28, 2008 |
| 7371650 |
Method for producing a transistor structure |
May. 13, 2008 |
| RE40222 |
Electronic semiconductor power device with integrated diode |
Apr. 8, 2008 |
| 7342294 |
SOI bipolar transistors with reduced self heating |
Mar. 11, 2008 |
| 7329940 |
Semiconductor structure and method of manufacture |
Feb. 12, 2008 |
| 7268412 |
Double polysilicon bipolar transistor |
Sep. 11, 2007 |
| 7265434 |
Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology |
Sep. 4, 2007 |
| 7164186 |
Structure of semiconductor device with sinker contact region |
Jan. 16, 2007 |
| 7075156 |
Collector structure for electrostatic discharge protection circuits |
Jul. 11, 2006 |
| 6762094 |
Nanometer-scale semiconductor devices and method of making |
Jul. 13, 2004 |
| 6664574 |
Heterojunction semiconductor device and method of manufacturing |
Dec. 16, 2003 |
| 6657279 |
PNP lateral bipolar electronic device and corresponding manufacturing process |
Dec. 2, 2003 |
| 6638807 |
Technique for gated lateral bipolar transistors |
Oct. 28, 2003 |
| 6627925 |
Transistor having a novel layout and an emitter having more than one feed point |
Sep. 30, 2003 |
| 6605870 |
Pressure-contact type semiconductor device |
Aug. 12, 2003 |
| 6600211 |
Bipolar transistor constructions |
Jul. 29, 2003 |
| 6586782 |
Transistor layout having a heat dissipative emitter |
Jul. 1, 2003 |
| 6524921 |
Methods of forming bipolar transistor constructions |
Feb. 25, 2003 |
| 6507089 |
Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor device |
Jan. 14, 2003 |
| 6489665 |
Lateral bipolar transistor |
Dec. 3, 2002 |
| 6376898 |
Bipolar transistor layout with minimized area and improved heat dissipation |
Apr. 23, 2002 |
| 6344775 |
Semiconductor device |
Feb. 5, 2002 |
| 6337503 |
Integrated power circuit with reduced parasitic current flow |
Jan. 8, 2002 |
| 6307235 |
Another technique for gated lateral bipolar transistors |
Oct. 23, 2001 |
| 6236071 |
Transistor having a novel layout and an emitter having more than one feed point |
May. 22, 2001 |
| 6218722 |
Antifuse based on silicided polysilicon bipolar transistor |
Apr. 17, 2001 |
| 6166426 |
Lateral bipolar transistors and systems using such |
Dec. 26, 2000 |
| 6146956 |
PNP lateral bipolar electronic device and corresponding manufacturing process |
Nov. 14, 2000 |
| 6144252 |
High power heterojunction bipolar transistor |
Nov. 7, 2000 |
| 6140690 |
Semiconductor device |
Oct. 31, 2000 |
| 6127236 |
Method of forming a lateral bipolar transistor |
Oct. 3, 2000 |
| 5973513 |
Integrated circuit arrangement with an open-collector transistor designed as npn transistor |
Oct. 26, 1999 |
| 5945726 |
Lateral bipolar transistor |
Aug. 31, 1999 |
| 5920771 |
Method of making antifuse based on silicided single polysilicon bipolar transistor |
Jul. 6, 1999 |
| 5895964 |
Thermoelectric cooling system |
Apr. 20, 1999 |
| 5773873 |
Semiconductor device having multi-emitter structure |
Jun. 30, 1998 |
| 5668397 |
High frequency analog transistors, method of fabrication and circuit implementation |
Sep. 16, 1997 |
| 5614422 |
Process for doping two levels of a double poly bipolar transistor after formation of second poly layer |
Mar. 25, 1997 |
| 5561073 |
Method of fabricating an isolation trench for analog bipolar devices in harsh environments |
Oct. 1, 1996 |
| 5525533 |
Method of making a low voltage coefficient capacitor |
Jun. 11, 1996 |
| 5523613 |
Band gap reference power supply device |
Jun. 4, 1996 |
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