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Class Information
Number: 257/E27.037
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Including component having an active region in common (epo) > With component other than field-effect type (epo) > Bipolar transistor in combination with diode, capacitor, or resistor (epo)
Description: This subclass is indented under subclass E27.036. This subclass is substantially the same in scope as ECLA classification H01L27/07T2.










Sub-classes under this class:

Class Number Class Name Patents
257/E27.043 Lateral bipolar transistor in combination with diode, capacitor, or resistor (epo) 8
257/E27.038 Vertical bipolar transistor in combination with diode, capacitor, or resistor (epo) 44


Patents under this class:

Patent Number Title Of Patent Date Issued
8648386 Semiconductor structure and manufacturing method for the same and ESD circuit Feb. 11, 2014
8624355 Semiconductor device and method for manufacturing the same Jan. 7, 2014
8609502 Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode Dec. 17, 2013
8569865 Integrated circuit and production method Oct. 29, 2013
8507352 Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode Aug. 13, 2013
8288824 Semiconductor device including insulated gate bipolar transistor and diode Oct. 16, 2012
8138575 Integrated circuit including a reverse current complex Mar. 20, 2012
8102025 Semiconductor device having IGBT and diode Jan. 24, 2012
8049306 High voltage integration circuit with freewheeling diode embedded in transistor Nov. 1, 2011
7838879 Array substrate having enhanced aperture ratio, method of manufacturing the same and display device having the same Nov. 23, 2010
7473609 Surface treatment in preparation for contact placement Jan. 6, 2009
7382025 ESD protection structure with lower maximum voltage Jun. 3, 2008
6756280 Semiconductor device and a process for producing same Jun. 29, 2004
6642605 Semiconductor device and a process for producing same Nov. 4, 2003
5514901 Epitaxial island with adjacent asymmetrical structure to reduce collection of injected current from the island into other islands May. 7, 1996
5023482 ISL to TTL translator Jun. 11, 1991
4716314 Integrated circuit Dec. 29, 1987
4595942 Integrated circuit Jun. 17, 1986
4567501 Resistor structure in integrated injection logic Jan. 28, 1986
4380021 Semiconductor integrated circuit Apr. 12, 1983
4288805 Integrated logic gate with NPN inverter, PNP clamp, coupling, Shottky diodes and diffused crossunder Sep. 8, 1981
4199775 Integrated circuit and method for fabrication thereof Apr. 22, 1980
4131806 I.I.L. with injector base resistor and schottky clamp Dec. 26, 1978
4100564 Power transistor device Jul. 11, 1978
4076556 Method for fabrication of improved bipolar injection logic circuit Feb. 28, 1978
4053923 Integrated logic elements with improved speed-power characteristics Oct. 11, 1977
3988569 Thermal printhead with memory Oct. 26, 1976
3979734 Multiple element charge storage memory cell Sep. 7, 1976











 
 
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