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Class Information
Number: 257/E27.032
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Including component having an active region in common (epo) > Including component of the field-effect type (epo) > In combination with bipolar transistor and diode, capacitor, or resistor (epo) > In combination with lateral bipolar transistor and diode, capacitor, or resistor (epo)
Description: This subclass is indented under subclass E27.03. This subclass is substantially the same in scope as ECLA classification H01L27/07F2L.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8587094 Semiconductor device using a compound semiconductor subtrate Nov. 19, 2013
8519432 Semiconductor switch Aug. 27, 2013
8138574 PCM with poly-emitter BJT access devices Mar. 20, 2012
7948058 Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device May. 24, 2011
7943957 Lateral SOI semiconductor devices and manufacturing method thereof May. 17, 2011
7741700 Transistor with heat dissipating means Jun. 22, 2010
7633139 Semiconductor diode device with lateral transistor Dec. 15, 2009
7569448 Semiconductor device including bipolar junction transistor with protected emitter-base junction Aug. 4, 2009
6337501 Semiconductor device having bipolar transistor and MOS transistor Jan. 8, 2002
6284582 MOS-gate tunneling-injection bipolar transistor Sep. 4, 2001
6140683 Efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection Oct. 31, 2000
6081139 Differential amplifier with lateral bipolar transistor Jun. 27, 2000
6071768 Method of making an efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection Jun. 6, 2000
6015982 Lateral bipolar field effect mode hybrid transistor and method for operating the same Jan. 18, 2000
5998854 Semiconductor device Dec. 7, 1999
5936454 Lateral bipolar transistor operating with independent base and gate biasing Aug. 10, 1999
5914522 Power semiconductor structure with lateral transistor driven by vertical transistor Jun. 22, 1999
5834814 Semiconductor integrated circuit Nov. 10, 1998
5764106 Gain-controlled amplifier and automatic gain control amplifier using GCLBT Jun. 9, 1998
5717241 Gate controlled lateral bipolar junction transistor Feb. 10, 1998
5670396 Method of forming a DMOS-controlled lateral bipolar transistor Sep. 23, 1997
5578856 BicMOS device having a bipolar transistor and a MOS triggering transistor Nov. 26, 1996
5572048 Voltage-driven type semiconductor device Nov. 5, 1996
5552624 Multi-function electronic component, especially negative dynamic resistance element, and corresponding method of fabrication Sep. 3, 1996
5508550 Semiconductor device including a lateral-type transistor Apr. 16, 1996
5467057 Circuit and method of varying amplifier gain Nov. 14, 1995
5459083 Method for making BIMOS device having a bipolar transistor and a MOS triggering transistor Oct. 17, 1995
5404043 Semiconductor devices of the planar type bipolar transistors and combination bipolar/MIS type transistors Apr. 4, 1995
5281544 Method of manufacturing planar type polar transistors and combination bipolar/MIS type transistors Jan. 25, 1994
5103281 MOS-cascoded bipolar current sources in non-epitaxial structure Apr. 7, 1992
4891533 MOS-cascoded bipolar current sources in non-epitaxial structure Jan. 2, 1990
4811064 Static induction transistor and integrated circuit device using same Mar. 7, 1989
4786961 Bipolar transistor with transient suppressor Nov. 22, 1988
4700213 Multi-drain enhancement JFET logic (SITL) with complementary MOSFET load Oct. 13, 1987
4697199 Semiconductor protection device having a bipolar transistor and an auxiliary field effect transistor Sep. 29, 1987
4678936 MOS-cascoded bipolar current sources in non-epitaxial structure Jul. 7, 1987
4645957 Normally-off semiconductor device with low on resistance and circuit analogue Feb. 24, 1987
4608582 Semiconductor device having non-saturating I-V characteristics and integrated circuit structure including same Aug. 26, 1986
4506282 Normally-off semiconductor device with low on resistance and circuit analogue Mar. 19, 1985
4395812 Forming an integrated circuit Aug. 2, 1983
4380021 Semiconductor integrated circuit Apr. 12, 1983
4338618 Composite static induction transistor and integrated circuit utilizing same Jul. 6, 1982
4314267 Dense high performance JFET compatible with NPN transistor formation and merged BIFET Feb. 2, 1982
4270059 Static induction transistor logic circuit May. 26, 1981
4259681 Integrated circuit Mar. 31, 1981
4237472 High performance electrically alterable read only memory (EAROM) Dec. 2, 1980
4215322 High frequency oscillating circuit using AT cut quartz crystal vibrator Jul. 29, 1980
4198648 Integrated semiconductor device Apr. 15, 1980
4131908 Semiconductor protection device having a bipolar lateral transistor Dec. 26, 1978
4068254 Integrated FET circuit with input current cancellation Jan. 10, 1978

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