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Class Information
Number: 257/E27.031
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Including component having an active region in common (epo) > Including component of the field-effect type (epo) > In combination with bipolar transistor and diode, capacitor, or resistor (epo) > In combination with vertical bipolar transistor and diode, capacitor, or resistor (epo)
Description: This subclass is indented under subclass E27.03. This subclass is substantially the same in scope as ECLA classification H01L27/07F2B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7586130 |
Vertical field effect transistor using linear structure as a channel region and method for fabricating the same |
Sep. 8, 2009 |
| 7554160 |
Semiconductor device |
Jun. 30, 2009 |
| 7528468 |
Capacitor assembly with shielded connections and method for forming the same |
May. 5, 2009 |
| 7470585 |
Integrated circuit and fabrication process |
Dec. 30, 2008 |
| 6882009 |
Electrostatic discharge protection device and method of manufacturing the same |
Apr. 19, 2005 |
| 6642120 |
Semiconductor circuit |
Nov. 4, 2003 |
| 6259134 |
Trench thyristor with improved breakdown voltage characteristics |
Jul. 10, 2001 |
| 6255713 |
Current source using merged vertical bipolar transistor based on gate induced gate leakage current |
Jul. 3, 2001 |
| 6144077 |
Semiconductor device comprising a bipolar transistor |
Nov. 7, 2000 |
| 6121640 |
Monolithically integrated device with protective structure |
Sep. 19, 2000 |
| 5960277 |
Method of making a merged device with aligned trench FET and buried emitter patterns |
Sep. 28, 1999 |
| RE36311 |
Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process |
Sep. 21, 1999 |
| 5929485 |
High voltage insulated gate type bipolar transistor for self-isolated smart power IC |
Jul. 27, 1999 |
| 5910664 |
Emitter-switched transistor structures |
Jun. 8, 1999 |
| 5907503 |
Vertical bipolar SRAM cell, array and system, and a method for making the cell and the array |
May. 25, 1999 |
| 5896313 |
Vertical bipolar SRAM cell, array and system, and a method of making the cell and the array |
Apr. 20, 1999 |
| 5811860 |
Bi-CMOS merged devices |
Sep. 22, 1998 |
| 5710443 |
Merged device with aligned trench fet and buried emitter patterns |
Jan. 20, 1998 |
| RE35642 |
Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process |
Oct. 28, 1997 |
| 5679972 |
Semiconductor device |
Oct. 21, 1997 |
| 5659190 |
Semiconductor device in a thin active layer with high breakdown voltage |
Aug. 19, 1997 |
| 5637889 |
Composite power transistor structures using semiconductor materials with different bandgaps |
Jun. 10, 1997 |
| 5591655 |
Process for manufacturing a vertical switched-emitter structure with improved lateral isolation |
Jan. 7, 1997 |
| 5583363 |
Inverter gate circuit of a bi-CMOS structure having common layers between fets and bipolar transistors |
Dec. 10, 1996 |
| 5574301 |
Vertical switched-emitter structure with improved lateral isolation |
Nov. 12, 1996 |
| 5572048 |
Voltage-driven type semiconductor device |
Nov. 5, 1996 |
| 5567969 |
Compound modulated integrated transistor structure with reduced bipolar switch back effect |
Oct. 22, 1996 |
| 5538907 |
Method for forming a CMOS integrated circuit with electrostatic discharge protection |
Jul. 23, 1996 |
| 5538908 |
Method for manufacturing a BiCMOS semiconductor device |
Jul. 23, 1996 |
| 5538908 |
Method for manufacturing a BiCMOS semiconductor device |
Jul. 23, 1996 |
| 5538907 |
Method for forming a CMOS integrated circuit with electrostatic discharge protection |
Jul. 23, 1996 |
| 5525826 |
Integrated vertical bipolar and vertical MOSFET transistors |
Jun. 11, 1996 |
| 5488241 |
Integrated device combining a bipolar transistor and a field effect transistor |
Jan. 30, 1996 |
| 5471419 |
Semiconductor device having a programmable memory cell |
Nov. 28, 1995 |
| 5441903 |
BiCMOS process for supporting merged devices |
Aug. 15, 1995 |
| 5442220 |
Constant voltage diode having a reduced leakage current and a high electrostatic breakdown voltage |
Aug. 15, 1995 |
| 5440164 |
MOS/bipolar device |
Aug. 8, 1995 |
| 5365100 |
Low voltage compound modulated integrated transistor structure |
Nov. 15, 1994 |
| 5341004 |
Semiconductor switching device with reduced switching loss |
Aug. 23, 1994 |
| 5247200 |
MOSFET input type BiMOS IC device |
Sep. 21, 1993 |
| 5182469 |
Integrated circuit having bipolar transistors and field effect transistors respectively using potentials of opposite polarities relative to substrate |
Jan. 26, 1993 |
| 5172209 |
Integral Bi-CMOS logic circuit |
Dec. 15, 1992 |
| 5164812 |
Conductance modulated integrated transistor structure with low drain capacitance |
Nov. 17, 1992 |
| 5119160 |
Clocked CBICMOS integrated transistor structure |
Jun. 2, 1992 |
| 5118635 |
Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process |
Jun. 2, 1992 |
| 5117274 |
Merged complementary bipolar and MOS means and method |
May. 26, 1992 |
| 5105105 |
High speed logic and memory family using ring segment buffer |
Apr. 14, 1992 |
| 5103281 |
MOS-cascoded bipolar current sources in non-epitaxial structure |
Apr. 7, 1992 |
| 5101257 |
Semiconductor device having merged bipolar and MOS transistors and process for making the same |
Mar. 31, 1992 |
| 5065213 |
Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process |
Nov. 12, 1991 |
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