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Class Information
Number: 257/E27.031
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Including component having an active region in common (epo) > Including component of the field-effect type (epo) > In combination with bipolar transistor and diode, capacitor, or resistor (epo) > In combination with vertical bipolar transistor and diode, capacitor, or resistor (epo)
Description: This subclass is indented under subclass E27.03. This subclass is substantially the same in scope as ECLA classification H01L27/07F2B.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8614489 Vertical NPNP structure in a triple well CMOS process Dec. 24, 2013
8587094 Semiconductor device using a compound semiconductor subtrate Nov. 19, 2013
8008687 Electrostatic discharge protection device Aug. 30, 2011
7994068 Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon Aug. 9, 2011
7880234 NPN Darlington ESD protection circuit Feb. 1, 2011
7838937 Circuits providing ESD protection to high voltage laterally diffused metal oxide semiconductor (LDMOS) transistors Nov. 23, 2010
7800093 Resistive memory including buried word lines Sep. 21, 2010
7718546 Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon May. 18, 2010
7586130 Vertical field effect transistor using linear structure as a channel region and method for fabricating the same Sep. 8, 2009
7554160 Semiconductor device Jun. 30, 2009
7528468 Capacitor assembly with shielded connections and method for forming the same May. 5, 2009
7470585 Integrated circuit and fabrication process Dec. 30, 2008
6882009 Electrostatic discharge protection device and method of manufacturing the same Apr. 19, 2005
6642120 Semiconductor circuit Nov. 4, 2003
6259134 Trench thyristor with improved breakdown voltage characteristics Jul. 10, 2001
6255713 Current source using merged vertical bipolar transistor based on gate induced gate leakage current Jul. 3, 2001
6144077 Semiconductor device comprising a bipolar transistor Nov. 7, 2000
6121640 Monolithically integrated device with protective structure Sep. 19, 2000
5960277 Method of making a merged device with aligned trench FET and buried emitter patterns Sep. 28, 1999
RE36311 Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process Sep. 21, 1999
5929485 High voltage insulated gate type bipolar transistor for self-isolated smart power IC Jul. 27, 1999
5910664 Emitter-switched transistor structures Jun. 8, 1999
5907503 Vertical bipolar SRAM cell, array and system, and a method for making the cell and the array May. 25, 1999
5896313 Vertical bipolar SRAM cell, array and system, and a method of making the cell and the array Apr. 20, 1999
5811860 Bi-CMOS merged devices Sep. 22, 1998
5710443 Merged device with aligned trench fet and buried emitter patterns Jan. 20, 1998
RE35642 Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process Oct. 28, 1997
5679972 Semiconductor device Oct. 21, 1997
5659190 Semiconductor device in a thin active layer with high breakdown voltage Aug. 19, 1997
5637889 Composite power transistor structures using semiconductor materials with different bandgaps Jun. 10, 1997
5591655 Process for manufacturing a vertical switched-emitter structure with improved lateral isolation Jan. 7, 1997
5583363 Inverter gate circuit of a bi-CMOS structure having common layers between fets and bipolar transistors Dec. 10, 1996
5574301 Vertical switched-emitter structure with improved lateral isolation Nov. 12, 1996
5572048 Voltage-driven type semiconductor device Nov. 5, 1996
5567969 Compound modulated integrated transistor structure with reduced bipolar switch back effect Oct. 22, 1996
5538908 Method for manufacturing a BiCMOS semiconductor device Jul. 23, 1996
5538908 Method for manufacturing a BiCMOS semiconductor device Jul. 23, 1996
5538907 Method for forming a CMOS integrated circuit with electrostatic discharge protection Jul. 23, 1996
5538907 Method for forming a CMOS integrated circuit with electrostatic discharge protection Jul. 23, 1996
5525826 Integrated vertical bipolar and vertical MOSFET transistors Jun. 11, 1996
5488241 Integrated device combining a bipolar transistor and a field effect transistor Jan. 30, 1996
5471419 Semiconductor device having a programmable memory cell Nov. 28, 1995
5441903 BiCMOS process for supporting merged devices Aug. 15, 1995
5442220 Constant voltage diode having a reduced leakage current and a high electrostatic breakdown voltage Aug. 15, 1995
5440164 MOS/bipolar device Aug. 8, 1995
5365100 Low voltage compound modulated integrated transistor structure Nov. 15, 1994
5341004 Semiconductor switching device with reduced switching loss Aug. 23, 1994
5247200 MOSFET input type BiMOS IC device Sep. 21, 1993
5182469 Integrated circuit having bipolar transistors and field effect transistors respectively using potentials of opposite polarities relative to substrate Jan. 26, 1993
5172209 Integral Bi-CMOS logic circuit Dec. 15, 1992

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