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Class Information
Number: 257/E27.03
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Including component having an active region in common (epo) > Including component of the field-effect type (epo) > In combination with bipolar transistor and diode, capacitor, or resistor (epo)
Description: This subclass is indented under subclass E27.029. This subclass is substantially the same in scope as ECLA classification H01L27/07F2.










Sub-classes under this class:

Class Number Class Name Patents
257/E27.032 In combination with lateral bipolar transistor and diode, capacitor, or resistor (epo) 52
257/E27.031 In combination with vertical bipolar transistor and diode, capacitor, or resistor (epo) 131


Patents under this class:

Patent Number Title Of Patent Date Issued
8587094 Semiconductor device using a compound semiconductor subtrate Nov. 19, 2013
8476157 Buried bit line anti-fuse one-time-programmable nonvolatile memory Jul. 2, 2013
8232156 Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance Jul. 31, 2012
8072033 Semiconductor device having elongated electrostatic protection element along long side of semiconductor chip Dec. 6, 2011
7791102 Electrostatic discharge protection devices and methods for protecting semiconductor devices against electrostatic discharge events Sep. 7, 2010
7786000 Buried bit line anti-fuse one-time-programmable nonvolatile memory Aug. 31, 2010
7655965 Semiconductor light receiving device and method of manufacturing the same Feb. 2, 2010
7528468 Capacitor assembly with shielded connections and method for forming the same May. 5, 2009
7485931 Semiconductor integrated circuit Feb. 3, 2009
7338875 Method of fabricating a semiconductor device having a toroidal-like junction Mar. 4, 2008
7217613 Low cost fabrication of high resistivity resistors May. 15, 2007
7183612 Semiconductor device having an electrostatic discharge protecting element Feb. 27, 2007
6377115 Integrated potentiometer and corresponding fabrication process Apr. 23, 2002
6137140 Integrated SCR-LDMOS power device Oct. 24, 2000
5854100 Method of forming a new bipolar/CMOS pixel for high resolution imagers Dec. 29, 1998
4999518 MOS switching circuit having gate enhanced lateral bipolar transistor Mar. 12, 1991
4920399 Conductance-modulated integrated transistor structure Apr. 24, 1990
4868135 Method for manufacturing a Bi-CMOS device Sep. 19, 1989
4847671 Monolithically integrated insulated gate semiconductor device Jul. 11, 1989
4458408 Method for making a light-activated line-operable zero-crossing switch Jul. 10, 1984
4429326 I.sup.2 L Memory with nonvolatile storage Jan. 31, 1984
4396932 Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other Aug. 2, 1983
4150392 Semiconductor integrated flip-flop circuit device including merged bipolar and field effect transistors Apr. 17, 1979
3986177 Semiconductor store element and stores formed by matrices of such elements Oct. 12, 1976











 
 
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