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Class Information
Number: 257/E27.028
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Including component having an active region in common (epo)
Description: This subclass is indented under subclass E27.011. This subclass is substantially the same in scope as ECLA classification H01L27/07.










Sub-classes under this class:

Class Number Class Name Patents
257/E27.029 Including component of the field-effect type (epo) 74
257/E27.036 With component other than field-effect type (epo) 14


Patents under this class:

Patent Number Title Of Patent Date Issued
8659059 Strained transistor structure Feb. 25, 2014
8648392 Semiconductor integrated circuit Feb. 11, 2014
8614487 Split dual gate field effect transistor Dec. 24, 2013
8575706 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two different gate level features inner extensions Nov. 5, 2013
8564071 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two different gate level feature extensions beyond Oct. 22, 2013
8558322 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two gate electrodes electrically connected to each Oct. 15, 2013
8552508 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with shared diffusion regions on opposite sides of two-transistor Oct. 8, 2013
8405162 Integrated circuit including gate electrode level region including cross-coupled transistors having at least one gate contact located over outer portion of gate electrode level region Mar. 26, 2013
8405163 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with shared diffusion regions on opposite sides of two-transistor Mar. 26, 2013
8395224 Linear gate level cross-coupled transistor device with non-overlapping PMOS transistors and non-overlapping NMOS transistors relative to directions of gate electrodes Mar. 12, 2013
8026545 EEPROM Sep. 27, 2011
8008667 Semiconductor device including a transparent semiconductor layer for viewing an underlying transistor in a semiconductor substrate Aug. 30, 2011
7714389 Semiconductor device having two bipolar transistors constituting electrostatic protective element May. 11, 2010
6140680 Integrated power semiconductor transistor with current sensing Oct. 31, 2000
5699008 Thyristor controllable by logic signals Dec. 16, 1997
5451806 Method and device for sensing a surface temperature of an insulated gate semiconductor device Sep. 19, 1995
5363325 Dynamic semiconductor memory device having high integration density Nov. 8, 1994
5280200 Pipelined buffer for analog signal and power supply Jan. 18, 1994
5198691 BiMOS devices and BiMOS memories Mar. 30, 1993
4059814 Controllable semiconductor element Nov. 22, 1977











 
 
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