Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Integrated circuit having a three-dimensional layout (epo) > Patents

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Class Information
Number: 257/E27.026
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Integrated circuit having a three-dimensional layout (epo)
Description: This subclass is indented under subclass E27.011. This subclass is substantially the same in scope as ECLA classification H01L27/06E.

Sub-classes under this class:

Class Number	Class Name	Patents
257/E27.027	Including components formed on opposite sides of a semiconductor substrate (epo)	20

Patents under this class:

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number	Title Of Patent	Date Issued
4698659	Stacked complementary metal oxide semiconductor inverter	Oct. 6, 1987
4692994	Process for manufacturing semiconductor devices containing microbridges	Sep. 15, 1987
4679299	Formation of self-aligned stacked CMOS structures by lift-off	Jul. 14, 1987
4680609	Structure and fabrication of vertically integrated CMOS logic gates	Jul. 14, 1987
4670768	Complementary MOS integrated circuits having vertical channel FETs	Jun. 2, 1987
4670765	Semiconductor photodetector element	Jun. 2, 1987
4669062	Two-tiered dynamic random access memory (DRAM) cell	May. 26, 1987
4667217	Two bit vertically/horizontally integrated memory cell	May. 19, 1987
4663648	Three dimensional structures of active and passive semiconductor components	May. 5, 1987
4654121	Fabrication process for aligned and stacked CMOS devices	Mar. 31, 1987
4654690	Capacitive elements with reduced stray capacitance	Mar. 31, 1987
4649627	Method of fabricating silicon-on-insulator transistors with a shared element	Mar. 17, 1987
4646266	Programmable semiconductor structures and methods for using the same	Feb. 24, 1987
4641173	Integrated circuit load device	Feb. 3, 1987
4639758	Metal oxide semiconductor field-effect transistor with metal source making ohmic contact to channel-base region	Jan. 27, 1987
4635089	MIS-integrated semiconductor device	Jan. 6, 1987
4633438	Stacked semiconductor memory	Dec. 30, 1986
4631563	Metal oxide semiconductor field-effect transistor with metal source region	Dec. 23, 1986
4630089	Semiconductor memory device	Dec. 16, 1986
4622575	Integrated circuit bipolar memory cell	Nov. 11, 1986
4620212	Semiconductor device with a resistor of polycrystalline silicon	Oct. 28, 1986
4612563	High voltage integrated circuit	Sep. 16, 1986
4609835	Semiconductor integrated circuit	Sep. 2, 1986
4609407	Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers	Sep. 2, 1986
4603341	Stacked double dense read only memory	Jul. 29, 1986
4593453	Two-level transistor structures and method utilizing minimal area therefor	Jun. 10, 1986
4593300	Folded logic gate	Jun. 3, 1986
4584594	Logic structure utilizing polycrystalline silicon Schottky diodes	Apr. 22, 1986
4571609	Stacked MOS device with means to prevent substrate floating	Feb. 18, 1986
4570175	Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations	Feb. 11, 1986
4569700	Method of manufacturing a stacked semiconductor device	Feb. 11, 1986
4566025	CMOS Structure incorporating vertical IGFETS	Jan. 21, 1986
4565712	Method of making a semiconductor read only memory	Jan. 21, 1986
4555721	Structure of stacked, complementary MOS field effect transistor circuits	Nov. 26, 1985
4554729	Method of making semiconductor memory device	Nov. 26, 1985
4554570	Vertically integrated IGFET device	Nov. 19, 1985
4554572	Self-aligned stacked CMOS	Nov. 19, 1985
4544941	Semiconductor device having multiple conductive layers and the method of manufacturing the semiconductor device	Oct. 1, 1985
4541006	Static memory having load polysilicon resistors formed over driver FET drains	Sep. 10, 1985
4536785	One transistor dynamic random access memory	Aug. 20, 1985
4533935	Semiconductor device and a method for manufacturing the same	Aug. 6, 1985
4530149	Method for fabricating a self-aligned vertical IGFET	Jul. 23, 1985
4529998	Amplified gate thyristor with non-latching amplified control transistors across base layers	Jul. 16, 1985
4528582	Interconnection structure for polycrystalline silicon resistor and methods of making same	Jul. 9, 1985
4504743	Semiconductor resistor element	Mar. 12, 1985
4500905	Stacked semiconductor device with sloping sides	Feb. 19, 1985
4498226	Method for manufacturing three-dimensional semiconductor device by sequential beam epitaxy	Feb. 12, 1985
4494135	Programmable read only memory cell having an electrically destructible programmation element integrally formed with a junction diode	Jan. 15, 1985
4492974	DMOS With gate protection diode formed over base region	Jan. 8, 1985
4491742	Semiconductor switch device	Jan. 1, 1985