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Class Information
Number: 257/E27.026
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Integrated circuit having a three-dimensional layout (epo)
Description: This subclass is indented under subclass E27.011. This subclass is substantially the same in scope as ECLA classification H01L27/06E.










Sub-classes under this class:

Class Number Class Name Patents
257/E27.027 Including components formed on opposite sides of a semiconductor substrate (epo) 23


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
4814841 Semiconductor device Mar. 21, 1989
4805071 High voltage capacitor for integrated circuits Feb. 14, 1989
4799097 CMOS integrated devices in seeded islands Jan. 17, 1989
4794442 Three-dimensional integrated circuit Dec. 27, 1988
4777147 Forming a split-level CMOS device Oct. 11, 1988
4768076 Recrystallized CMOS with different crystal planes Aug. 30, 1988
4763183 Semiconductor-on-insulator (SOI) devices and SOI IC fabrication method Aug. 9, 1988
4758896 3-Dimensional integrated circuit for liquid crystal display TV receiver Jul. 19, 1988
4754314 Split-level CMOS Jun. 28, 1988
4751562 Field-effect semiconductor device Jun. 14, 1988
4737470 Method of making three dimensional structures of active and passive semiconductor components Apr. 12, 1988
4717681 Method of making a heterojunction bipolar transistor with SIPOS Jan. 5, 1988
4712192 Semiconductor memory device and fabrication process thereof Dec. 8, 1987
4710791 Protection device in an integrated circuit Dec. 1, 1987
4698659 Stacked complementary metal oxide semiconductor inverter Oct. 6, 1987
4692994 Process for manufacturing semiconductor devices containing microbridges Sep. 15, 1987
4679299 Formation of self-aligned stacked CMOS structures by lift-off Jul. 14, 1987
4680609 Structure and fabrication of vertically integrated CMOS logic gates Jul. 14, 1987
4670768 Complementary MOS integrated circuits having vertical channel FETs Jun. 2, 1987
4670765 Semiconductor photodetector element Jun. 2, 1987
4669062 Two-tiered dynamic random access memory (DRAM) cell May. 26, 1987
4667217 Two bit vertically/horizontally integrated memory cell May. 19, 1987
4663648 Three dimensional structures of active and passive semiconductor components May. 5, 1987
4654121 Fabrication process for aligned and stacked CMOS devices Mar. 31, 1987
4654690 Capacitive elements with reduced stray capacitance Mar. 31, 1987
4649627 Method of fabricating silicon-on-insulator transistors with a shared element Mar. 17, 1987
4646266 Programmable semiconductor structures and methods for using the same Feb. 24, 1987
4641173 Integrated circuit load device Feb. 3, 1987
4639758 Metal oxide semiconductor field-effect transistor with metal source making ohmic contact to channel-base region Jan. 27, 1987
4635089 MIS-integrated semiconductor device Jan. 6, 1987
4633438 Stacked semiconductor memory Dec. 30, 1986
4631563 Metal oxide semiconductor field-effect transistor with metal source region Dec. 23, 1986
4630089 Semiconductor memory device Dec. 16, 1986
4622575 Integrated circuit bipolar memory cell Nov. 11, 1986
4620212 Semiconductor device with a resistor of polycrystalline silicon Oct. 28, 1986
4612563 High voltage integrated circuit Sep. 16, 1986
4609407 Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers Sep. 2, 1986
4609835 Semiconductor integrated circuit Sep. 2, 1986
4603341 Stacked double dense read only memory Jul. 29, 1986
4593453 Two-level transistor structures and method utilizing minimal area therefor Jun. 10, 1986
4593300 Folded logic gate Jun. 3, 1986
4584594 Logic structure utilizing polycrystalline silicon Schottky diodes Apr. 22, 1986
4571609 Stacked MOS device with means to prevent substrate floating Feb. 18, 1986
4569700 Method of manufacturing a stacked semiconductor device Feb. 11, 1986
4570175 Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations Feb. 11, 1986
4565712 Method of making a semiconductor read only memory Jan. 21, 1986
4566025 CMOS Structure incorporating vertical IGFETS Jan. 21, 1986
4555721 Structure of stacked, complementary MOS field effect transistor circuits Nov. 26, 1985
4554729 Method of making semiconductor memory device Nov. 26, 1985
4554570 Vertically integrated IGFET device Nov. 19, 1985

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