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Class Information
Number: 257/E27.023
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Integrated circuit having a two-dimensional layout of components without a common active region (epo) > With component other than field-effect type (epo) > Bipolar transistor in combination with diode, capacitor, or resistor (epo) > Lateral bipolar transistor in combination with diode, capacitor, or resistor (epo)
Description: This subclass is indented under subclass E27.019. This subclass is substantially the same in scope as ECLA classification H01L27/06D6T4.










Patents under this class:

Patent Number Title Of Patent Date Issued
8637924 Lateral trench MESFET Jan. 28, 2014
8587094 Semiconductor device using a compound semiconductor subtrate Nov. 19, 2013
8441084 Horizontal polysilicon-germanium heterojunction bipolar transistor May. 14, 2013
8030731 Isolated rectifier diode Oct. 4, 2011
8022477 Semiconductor apparatus having lateral type MIS transistor Sep. 20, 2011
7723823 Buried asymmetric junction ESD protection device May. 25, 2010
7675141 Semiconductor device and method of manufacturing the same Mar. 9, 2010
7633139 Semiconductor diode device with lateral transistor Dec. 15, 2009
7569903 Component arrangement having a transistor and an open-load detector Aug. 4, 2009
7554146 Metal-insulator-metal capacitor and method of fabricating the same Jun. 30, 2009
7271070 Method for producing transistors Sep. 18, 2007
7042064 Integrated circuit with a MOS capacitor May. 9, 2006
6946720 Bipolar transistor for an integrated circuit having variable value emitter ballast resistors Sep. 20, 2005
6835628 Integrated circuit with a MOS capacitor Dec. 28, 2004
6740562 Manufacturing method of a semiconductor device having a polysilicon electrode May. 25, 2004
RE34893 Semiconductor pressure sensor and method of manufacturing same Apr. 4, 1995
4626710 Low power logic circuit with storage charge control for fast switching Dec. 2, 1986
4100565 Monolithic resistor for compensating beta of a lateral transistor Jul. 11, 1978
4057894 Controllably valued resistor Nov. 15, 1977











 
 
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