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Class Information
Number: 257/E27.022
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Integrated circuit having a two-dimensional layout of components without a common active region (epo) > With component other than field-effect type (epo) > Bipolar transistor in combination with diode, capacitor, or resistor (epo) > Vertical bipolar transistor in combination with diode, capacitor, or resistor (epo) > Vertical bipolar transistor in combination with diode only (epo)
Description: This subclass is indented under subclass E27.02. This subclass is substantially the same in scope as ECLA classification H01L27/06D6T2D.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8659082 Method for manufacturing a semiconductor device having super junction structure Feb. 25, 2014
8643146 Semiconductor device Feb. 4, 2014
8624355 Semiconductor device and method for manufacturing the same Jan. 7, 2014
8609502 Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode Dec. 17, 2013
8587094 Semiconductor device using a compound semiconductor subtrate Nov. 19, 2013
8536655 Semiconductor device with power element and circuit element formed within the same semiconductor substrate Sep. 17, 2013
8507352 Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode Aug. 13, 2013
8288824 Semiconductor device including insulated gate bipolar transistor and diode Oct. 16, 2012
8106453 Semiconductor device having super junction structure Jan. 31, 2012
8102025 Semiconductor device having IGBT and diode Jan. 24, 2012
7989885 Semiconductor device having means for diverting short circuit current arranged in trench and method for producing same Aug. 2, 2011
7928470 Semiconductor device having super junction MOS transistor and method for manufacturing the same Apr. 19, 2011
7838907 Semiconductor device and power conversion device using the same Nov. 23, 2010
7768101 Semiconductor device having an insulated gate bipolar transistor and a free wheel diode Aug. 3, 2010
7718546 Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon May. 18, 2010
7602045 Semiconductor device and inverter device using the same Oct. 13, 2009
7586130 Vertical field effect transistor using linear structure as a channel region and method for fabricating the same Sep. 8, 2009
6800926 Tracking circuit Oct. 5, 2004
6800532 Method of manufacturing a semiconductor device comprising a bipolar transistor and a variable capacitor Oct. 5, 2004
6692982 Optical semiconductor integrated circuit device and manufacturing method for the same Feb. 17, 2004
6670255 Method of fabricating lateral diodes and bipolar transistors Dec. 30, 2003
6642607 Semiconductor device Nov. 4, 2003
6605830 Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein Aug. 12, 2003
6590273 Semiconductor integrated circuit device and manufacturing method thereof Jul. 8, 2003
6586317 Method of forming a zener diode in a npn and pnp bipolar process flow that requires no additional steps to set the breakdown voltage Jul. 1, 2003
6441463 IGBT, control circuit, and protection circuit on same substrate Aug. 27, 2002
6406965 Method of fabricating HBT devices Jun. 18, 2002
6387769 Method of producing a schottky varicap May. 14, 2002
6323509 Power semiconductor device including a free wheeling diode and method of manufacturing for same Nov. 27, 2001
6146957 Method of manufacturing a semiconductor device having a buried region with higher impurity concentration Nov. 14, 2000
5942783 Semiconductor device having improved latch-up protection Aug. 24, 1999
5798560 Semiconductor integrated circuit having a spark killer diode Aug. 25, 1998
5719066 Method of manufacturing a semiconductor integrated circuit apparatus having a mis-type condenser Feb. 17, 1998
5583348 Method for making a schottky diode that is compatible with high performance transistor structures Dec. 10, 1996
5539301 Monolithically integrated power output stage Jul. 23, 1996
5521414 Monolithic integrated structure to protect a power transistor against overvoltage May. 28, 1996
5432360 Semiconductor device including an anode layer having low density regions by selective diffusion Jul. 11, 1995
5323021 Semiconductor integrated circuit device having diode and bipolar transistor held in contact through oxygen-leakage film with emitter electrode Jun. 21, 1994
5320971 Process for obtaining high barrier Schottky diode and local interconnect Jun. 14, 1994
5306937 Semiconductor device having a built-in current-sensing diode Apr. 26, 1994
5285100 Semiconductor switching device Feb. 8, 1994
5268316 Fabrication process for Schottky diode with localized diode well Dec. 7, 1993
5179030 Method of fabricating a buried zener diode simultaneously with other semiconductor devices Jan. 12, 1993
5150177 Schottky diode structure with localized diode well Sep. 22, 1992
4965643 Schottky diode for integrated circuits Oct. 23, 1990
4523215 Semiconductor device Jun. 11, 1985
4398142 Kelvin-connected buried zener voltage reference circuit Aug. 9, 1983
4243435 Bipolar transistor fabrication process with an ion implanted emitter Jan. 6, 1981
4106048 Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor Aug. 8, 1978
4017882 Transistor having integrated protection Apr. 12, 1977

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