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Class Information
Number: 257/E27.021
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Integrated circuit having a two-dimensional layout of components without a common active region (epo) > With component other than field-effect type (epo) > Bipolar transistor in combination with diode, capacitor, or resistor (epo) > Vertical bipolar transistor in combination with diode, capacitor, or resistor (epo) > Vertical bipolar transistor in combination with resistor or capacitor only (epo)
Description: This subclass is indented under subclass E27.02. This subclass is substantially the same in scope as ECLA classification H01L27/06D6T2B.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8587094 Semiconductor device using a compound semiconductor subtrate Nov. 19, 2013
8319286 System and method for input pin ESD protection with floating and/or biased polysilicon regions Nov. 27, 2012
8138574 PCM with poly-emitter BJT access devices Mar. 20, 2012
7791169 Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errors Sep. 7, 2010
7768004 Semiconductor device including chips with electrically-isolated test elements and its manufacturing method Aug. 3, 2010
7053463 High-voltage integrated vertical resistor and manufacturing process thereof May. 30, 2006
7042064 Integrated circuit with a MOS capacitor May. 9, 2006
6946720 Bipolar transistor for an integrated circuit having variable value emitter ballast resistors Sep. 20, 2005
6940357 Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment line Sep. 6, 2005
6835628 Integrated circuit with a MOS capacitor Dec. 28, 2004
6791160 Semiconductor device and process for fabrication thereof Sep. 14, 2004
6740562 Manufacturing method of a semiconductor device having a polysilicon electrode May. 25, 2004
6667491 Semiconductor device Dec. 23, 2003
6639300 Semiconductor integrated circuit having an integrated resistance region Oct. 28, 2003
6563194 BJT with surface resistor connection May. 13, 2003
6551890 Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor Apr. 22, 2003
6511889 Reference voltage supply circuit having reduced dispersion of an output voltage Jan. 28, 2003
6483168 Integrated circuit having resistor formed over emitter of vertical bipolar transistor Nov. 19, 2002
6479360 Semiconductor device and manufacturing method Nov. 12, 2002
6465870 ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region Oct. 15, 2002
6410370 Capacitor for a semiconductor device Jun. 25, 2002
6403436 Semiconductor device and method of manufacturing the same Jun. 11, 2002
6329262 Method for producing semiconductor integrated circuit Dec. 11, 2001
6313515 Reference voltage supply circuit Nov. 6, 2001
6291873 Semiconductor device having a resistive element connected to a transistor and substrate Sep. 18, 2001
6177701 Semiconductor device with resistor and fabrication method therof Jan. 23, 2001
6090647 Capacitor for a semiconductor device Jul. 18, 2000
6040225 Method of fabricating polysilicon based resistors in Si-Ge heterojunction devices Mar. 21, 2000
6025632 Semiconductor integrated circuit with tungston silicide nitride thermal resistor Feb. 15, 2000
5889309 Electrostatic discharge protection circuit Mar. 30, 1999
5874771 Punch-through resistor Feb. 23, 1999
5858850 Process of fabricating integrated heterojunction bipolar device and MIS capacitor Jan. 12, 1999
5805410 MOS capacitor for improving electrostatic durability by using of a transistor Sep. 8, 1998
5691214 Method of manufacturing semiconductor devices Nov. 25, 1997
5684326 Emitter ballast bypass for radio frequency power transistors Nov. 4, 1997
5489796 Integrated circuit resistor comprising amorphous silicon Feb. 6, 1996
5336632 Method for manufacturing capacitor and bipolar transistor Aug. 9, 1994
5296734 Semiconductor integrated circuit having silicon nitride provided as insulator of capacitor Mar. 22, 1994
5221857 Bipolar transistor structure with polycrystalline resistor layer Jun. 22, 1993
4947231 Integrated structure with active and passive components enclosed in insulating pockets and operating at higher than the breakdown voltage between each component and the pocket containing it Aug. 7, 1990
4903109 Semiconductor devices having local oxide isolation Feb. 20, 1990
4898839 Semiconductor integrated circuit and manufacturing method therefor Feb. 6, 1990
4898837 Method of fabricating a semiconductor integrated circuit Feb. 6, 1990
4871977 Monolithic integrated wideband power amplifier Oct. 3, 1989
4812894 Semiconductor device Mar. 14, 1989
4758873 Balanced MOS capacitor with low stray capacitance and high ESD survival Jul. 19, 1988
4732872 Method for making a bipolar transistor and capacitors using doped polycrystalline silicon or metal silicide Mar. 22, 1988
4509250 Process for manufacturing a monolithic integrated circuit comprising at least one bipolar planar transistor Apr. 9, 1985
4418469 Method of simultaneously forming buried resistors and bipolar transistors by ion implantation Dec. 6, 1983
4416055 Method of fabricating a monolithic integrated circuit structure Nov. 22, 1983

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