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Class Information
Number: 257/E27.02
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Integrated circuit having a two-dimensional layout of components without a common active region (epo) > With component other than field-effect type (epo) > Bipolar transistor in combination with diode, capacitor, or resistor (epo) > Vertical bipolar transistor in combination with diode, capacitor, or resistor (epo)
Description: This subclass is indented under subclass E27.019. This subclass is substantially the same in scope as ECLA classification H01L27/06D6T2.










Sub-classes under this class:

Class Number Class Name Patents
257/E27.022 Vertical bipolar transistor in combination with diode only (epo) 52
257/E27.021 Vertical bipolar transistor in combination with resistor or capacitor only (epo) 57


Patents under this class:

Patent Number Title Of Patent Date Issued
8587094 Semiconductor device using a compound semiconductor subtrate Nov. 19, 2013
8421154 Semiconductor device having super junction structure and method for manufacturing the same Apr. 16, 2013
8399319 Semiconductor device and method for manufacturing the same Mar. 19, 2013
8039879 Semiconductor device having a control circuit and method of its manufacture Oct. 18, 2011
7994068 Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon Aug. 9, 2011
7968940 Insulated gate bipolar transistor device comprising a depletion-mode MOSFET Jun. 28, 2011
7915094 Method of making a diode read/write memory cell in a programmed state Mar. 29, 2011
7718546 Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon May. 18, 2010
7671371 Semiconductor layer structure and method of making the same Mar. 2, 2010
7618850 Method of making a diode read/write memory cell in a programmed state Nov. 17, 2009
7586130 Vertical field effect transistor using linear structure as a channel region and method for fabricating the same Sep. 8, 2009
7488625 Vertically stacked, field programmable, nonvolatile memory and method of fabrication Feb. 10, 2009
7352042 Radiation-emitting semiconductor device and method of manufacturing such a device Apr. 1, 2008
6989301 Method for manufacturing semiconductor device Jan. 24, 2006
6943428 Semiconductor device including bipolar transistor and buried conductive region Sep. 13, 2005
6936877 Integrated circuit including a capacitor with a high capacitance density Aug. 30, 2005
6867079 Method for manufacturing semiconductor device Mar. 15, 2005
6835632 Semiconductor device and process of producing the same Dec. 28, 2004
6649458 Method for manufacturing semiconductor device with hetero junction bipolar transistor Nov. 18, 2003
6610569 Semiconductor device and process of producing the same Aug. 26, 2003
6524924 Semiconductor device and process of producing the same Feb. 25, 2003
6133094 Semiconductor device and process of producing the same Oct. 17, 2000
5949122 Integrated circuit with a device having a predetermined reverse conduction threshold and a thermal compensation device with Vbe multipliers Sep. 7, 1999
5793097 Semiconductor device having conducting structure Aug. 11, 1998
5694071 Electronic device comprising means for compensating an undesired capacitance Dec. 2, 1997
5500541 Semiconductor device having voltage sensing element Mar. 19, 1996
5391905 Integrated logic circuit Feb. 21, 1995
5240867 Semiconductor integrated circuit having interconnection with improved design flexibility, and method of production Aug. 31, 1993
5065216 Semiconductor integrated circuit having interconnection with improved design flexibility, and method of production Nov. 12, 1991
4969030 Integrated structure for a signal transfer network, in particular for a pilot circuit for MOS power transistors Nov. 6, 1990
4689579 Analog integrated circuit Aug. 25, 1987
4295088 Temperature-sensitive voltage divider Oct. 13, 1981
4268348 Method for making semiconductor structure May. 19, 1981
4260436 Fabrication of moat resistor ram cell utilizing polycrystalline deposition and etching Apr. 7, 1981
4258311 Constant voltage generator for generating a constant voltage having a predetermined temperature coefficient Mar. 24, 1981
4193836 Method for making semiconductor structure Mar. 18, 1980
4134124 Semiconductor devices and circuit arrangements including such devices Jan. 9, 1979
4053336 Method of manufacturing a semiconductor integrated circuit device having a conductive plane and a diffused network of conductive tracks Oct. 11, 1977
4024417 Integrated semiconductor structure with means to prevent unlimited current flow May. 17, 1977
4009484 Integrated circuit isolation using gold-doped polysilicon Feb. 22, 1977
4009057 Method of manufacturing a semiconductor device Feb. 22, 1977
3990092 Resistance element for semiconductor integrated circuit Nov. 2, 1976
3967310 Semiconductor device having controlled surface charges by passivation films formed thereon Jun. 29, 1976
3946425 Multi-emitter transistor having heavily doped N+ regions surrounding base region of transistors Mar. 23, 1976
3945032 Semiconductor integrated circuit device having a conductive plane and a diffused network of conductive tracks Mar. 16, 1976











 
 
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