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Class Information
Number: 257/E27.017
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Integrated circuit having a two-dimensional layout of components without a common active region (epo) > Including a field-effect type component (epo) > In combination with bipolar transistor and diode, resistor, or capacitor (epo)
Description: This subclass is indented under subclass E27.014. This subclass is substantially the same in scope as ECLA classification H01L27/06D4W.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8659066 Integrated circuit with a thin body field effect transistor and capacitor Feb. 25, 2014
8618584 Semiconductor device Dec. 31, 2013
8587094 Semiconductor device using a compound semiconductor subtrate Nov. 19, 2013
8581339 Structure of NPN-BJT for improving punch through between collector and emitter Nov. 12, 2013
8445970 Bipolar device compatible with CMOS process technology May. 21, 2013
8441031 ESD protection device May. 14, 2013
8299539 Semiconductor device having IGBT and FWD on same substrate Oct. 30, 2012
8237227 Dummy gate structure for gate last process Aug. 7, 2012
8232156 Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance Jul. 31, 2012
8125051 Device layout for gate last process Feb. 28, 2012
8102002 System and method for isolated NMOS-based ESD clamp cell Jan. 24, 2012
8049223 Semiconductor device with large blocking voltage Nov. 1, 2011
8049284 Bipolar device compatible with CMOS process technology Nov. 1, 2011
7944019 Voltage-controlled semiconductor inductor and method May. 17, 2011
7791169 Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errors Sep. 7, 2010
7759172 Method of forming a planar combined structure of a bipolar junction transistor and n-type and p-type metal semiconductor field-effect transistors and method for forming the same Jul. 20, 2010
7759759 Integrated circuit including a high voltage bipolar device and low voltage devices Jul. 20, 2010
7642154 BiCMOS device and method of manufacturing a biCMOS device Jan. 5, 2010
7638828 Embedded capacitor Dec. 29, 2009
7612397 Memory cell having first and second capacitors with electrodes acting as control gates for nonvolatile memory transistors Nov. 3, 2009
7595526 Capacitor and method for fabricating the same Sep. 29, 2009
7573120 Semiconductor device and method of manufacturing the same Aug. 11, 2009
7535080 Reducing parasitic mutual capacitances May. 19, 2009
7528468 Capacitor assembly with shielded connections and method for forming the same May. 5, 2009
7511356 Voltage-controlled semiconductor inductor and method Mar. 31, 2009
7485905 Electrostatic discharge protection device Feb. 3, 2009
7414267 Semiconductor device and process for production thereof Aug. 19, 2008
7279753 Floating base bipolar ESD devices Oct. 9, 2007
7208766 Semiconductor device and process for production thereof Apr. 24, 2007
7199443 Integration of filters using on-chip transformers for RF and wireless applications Apr. 3, 2007
6960797 Semiconductor device Nov. 1, 2005
6958506 High-dielectric constant insulators for feol capacitors Oct. 25, 2005
6943428 Semiconductor device including bipolar transistor and buried conductive region Sep. 13, 2005
6885280 High value split poly p-resistor with low standard deviation Apr. 26, 2005
6833594 Semiconductor integrated circuit device and manufacture method therefore Dec. 21, 2004
6815302 Method of making a bipolar transistor with an oxygen implanted emitter window Nov. 9, 2004
6812108 BICMOS process with low temperature coefficient resistor (TCRL) Nov. 2, 2004
6800921 Method of fabricating a polysilicon capacitor utilizing fet and bipolar base polysilicon layers Oct. 5, 2004
6798024 BiCMOS process with low temperature coefficient resistor (TCRL) Sep. 28, 2004
6771112 Semiconductor integrated circuit having pads with less input signal attenuation Aug. 3, 2004
6720637 SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks Apr. 13, 2004
6670228 Method of fabricating a polysilicon capacitor utilizing FET and bipolar base polysilicon layers Dec. 30, 2003
6667207 High-dielectric constant insulators for FEOL capacitors Dec. 23, 2003
6555857 Semiconductor device Apr. 29, 2003
6552406 SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks Apr. 22, 2003
6548873 Semiconductor device and manufacturing method of the same Apr. 15, 2003
6541325 Method for fabricating a capacitor device with BiCMOS process and the capacitor device formed thereby Apr. 1, 2003
6528826 Depletion type MOS semiconductor device and MOS power IC Mar. 4, 2003
6522012 Semiconductor device with HIHG resistivity Feb. 18, 2003
6511889 Reference voltage supply circuit having reduced dispersion of an output voltage Jan. 28, 2003

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