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Class Information
Number: 257/E27.016
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Integrated circuit having a two-dimensional layout of components without a common active region (epo) > Including a field-effect type component (epo) > In combination with diode, resistor, or capacitor (epo)
Description: This subclass is indented under subclass E27.014. This subclass is substantially the same in scope as ECLA classification H01L27/06D4V.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6103621 Silicide process for mixed mode product with dual layer capacitor which is protected by a capacitor protective oxide during silicidation of FET device Aug. 15, 2000
6100126 Method of making a resistor utilizing a polysilicon plug formed with a high aspect ratio Aug. 8, 2000
6100154 Using LPCVD silicon nitride cap as a barrier to reduce resistance variations from hydrogen intrusion of high-value polysilicon resistor Aug. 8, 2000
6096600 Method of forming a capacitative section of a semiconductor device and method of forming a capacitative section and gate section of a semiconductor device Aug. 1, 2000
6097046 Vertical field effect transistor and diode Aug. 1, 2000
6097048 Dynamic random access memory cell suitable for integration with semiconductor logic devices Aug. 1, 2000
6096591 Method of making an IGFET and a protected resistor with reduced processing steps Aug. 1, 2000
6090656 Linear capacitor and process for making same Jul. 18, 2000
6090647 Capacitor for a semiconductor device Jul. 18, 2000
6083805 Method of forming capacitors in a semiconductor device Jul. 4, 2000
6084464 On-chip decoupling capacitor system with parallel fuse Jul. 4, 2000
6080617 Semiconductor device having capacitor and manufacturing method thereof Jun. 27, 2000
6080615 Method for forming a semiconductor device incorporating a dummy gate electrode Jun. 27, 2000
6081005 Semiconductor integrated circuit Jun. 27, 2000
6075266 Semiconductor device having MIS transistors and capacitor Jun. 13, 2000
6069036 Method of fabricating semiconductor device May. 30, 2000
6069403 Power module with lowered inductance and reduced voltage overshoots May. 30, 2000
6069391 Semiconductor device with boosting circuit and detecting circuit May. 30, 2000
6066567 Methods for in-situ removal of an anti-reflective coating during an oxide resistor protect etching process May. 23, 2000
6057572 Semiconductor integrated circuit device with MOS transistor and MOS capacitor and method for manufacturing the same May. 2, 2000
6057590 Structure of polysilicon load for static random access memory May. 2, 2000
6054344 OTP (open trigger path) latchup scheme using buried-diode for sub-quarter micron transistors Apr. 25, 2000
6054751 Semiconductor integrated circuit Apr. 25, 2000
6054359 Method for making high-sheet-resistance polysilicon resistors for integrated circuits Apr. 25, 2000
6040596 Dynamic random access memory devices having improved peripheral circuit resistors therein Mar. 21, 2000
6037627 MOS semiconductor device Mar. 14, 2000
6034388 Depleted polysilicon circuit element and method for producing the same Mar. 7, 2000
6033965 Process for fabricating mixed signal integrated circuit Mar. 7, 2000
6033950 Dual layer poly deposition to prevent auto-doping in mixed-mode product fabrication Mar. 7, 2000
6033232 Process of fabricating photodiode integrated with MOS device Mar. 7, 2000
6031266 Semiconductor device with conductive sidewall film Feb. 29, 2000
6027964 Method of making an IGFET with a selectively doped gate in combination with a protected resistor Feb. 22, 2000
6027965 Method of manufacturing an integrated circuit with MOS transistors having high breakdown voltages, and with precision resistors Feb. 22, 2000
6020229 Semiconductor device method for manufacturing Feb. 1, 2000
6013940 Poly-crystalline silicon film ladder resistor Jan. 11, 2000
6010927 Method for making a ferroelectric device having a tantalum nitride barrier layer Jan. 4, 2000
6011419 Decoupling scheme for mixed voltage integrated circuits Jan. 4, 2000
5994223 Method of manufacturing analog semiconductor device Nov. 30, 1999
5990521 Semiconductor device and method of producing the same Nov. 23, 1999
5990538 High resistivity integrated circuit resistor Nov. 23, 1999
5973346 Low-profile shallow trench double polysilicon capacitor Oct. 26, 1999
5973367 Multiple gated MOSFET for use in DC-DC converter Oct. 26, 1999
5973381 MOS capacitor and MOS capacitor fabrication method Oct. 26, 1999
5956593 Semiconductor device comprising an MOS capacitance Sep. 21, 1999
5939934 Integrated circuit passively biasing transistor effective threshold voltage and related methods Aug. 17, 1999
5939753 Monolithic RF mixed signal IC with power amplification Aug. 17, 1999
5937305 Manufacturing method of polysilicon load for static random access memory Aug. 10, 1999
5936288 Semiconductor integrated circuit device and low breakdown voltage zener diode Aug. 10, 1999
5929473 MMIC semiconductor device with WN.sub.x capacitor electrode Jul. 27, 1999
5926064 Floating MOS capacitor Jul. 20, 1999

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