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Class Information
Number: 257/E27.015
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo) > Including a plurality of components in a non-repetitive configuration (epo) > Integrated circuit having a two-dimensional layout of components without a common active region (epo) > Including a field-effect type component (epo) > In combination with bipolar transistor (epo)
Description: This subclass is indented under subclass E27.014. This subclass is substantially the same in scope as ECLA classification H01L27/06D4T.










Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
8692288 Heterojunction bipolar transistors and methods of manufacture Apr. 8, 2014
8674471 Semiconductor device supplying charging current to element to be charged Mar. 18, 2014
8669621 Semiconductor device and method of manufacturing semiconductor device Mar. 11, 2014
8643118 Bipolar field effect transistor structures and methods of forming the same Feb. 4, 2014
8610169 Electrostatic discharge protection circuit Dec. 17, 2013
8546939 RF module including control IC without the aid of a relay pad Oct. 1, 2013
8536002 Bipolar transistor in bipolar-CMOS technology Sep. 17, 2013
8507339 BiCMOS device Aug. 13, 2013
8461621 Method and apparatus of forming bipolar transistor device Jun. 11, 2013
8455980 Schottky-clamped bipolar transistor with reduced self heating Jun. 4, 2013
8405157 Bipolar integration without additional masking steps Mar. 26, 2013
8310027 Electronic device and manufacturing method thereof Nov. 13, 2012
8309990 Integrated devices on a common compound semiconductor III-V wafer Nov. 13, 2012
8304308 Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length Nov. 6, 2012
8293598 Process for manufacturing a memory device including a vertical bipolar junction transistor and a CMOS transistor with spacers Oct. 23, 2012
8288797 Integrated devices on a common compound semiconductor III-V wafer Oct. 16, 2012
8283696 Integrated low leakage diode Oct. 9, 2012
8253203 Electrostatic discharge (ESD) protection circuit Aug. 28, 2012
8242007 Semiconductor device formed using single polysilicon process and method of fabricating the same Aug. 14, 2012
8237191 Heterojunction bipolar transistors and methods of manufacture Aug. 7, 2012
8212292 High gain tunable bipolar transistor Jul. 3, 2012
8159026 Lateral high-voltage semiconductor devices with majorities of both types for conduction Apr. 17, 2012
8134212 Implanted well breakdown in high voltage devices Mar. 13, 2012
8119436 Image sensor having optical waveguide structure and method for manufacturing the same Feb. 21, 2012
8026555 Bipolar/dual FET structure having FETs with isolated channels Sep. 27, 2011
8017975 Semiconductor device Sep. 13, 2011
8017957 Semiconductor laser apparatus Sep. 13, 2011
8012842 Method for fabricating isolated integrated semiconductor structures Sep. 6, 2011
8008727 Semiconductor integrated circuit device including a pad and first mosfet Aug. 30, 2011
7999345 Semiconductor device and manufacturing method thereof Aug. 16, 2011
7989845 Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereof Aug. 2, 2011
7898038 Method to improve writer leakage in SiGe bipolar device Mar. 1, 2011
7893463 Integrated devices on a common compound semiconductor III-V wafer Feb. 22, 2011
7855421 Embedded phase-change memory and method of fabricating the same Dec. 21, 2010
7847326 Backside illuminated image sensor Dec. 7, 2010
7842968 Integrated low leakage diode Nov. 30, 2010
7834456 Electrical contacts for CMOS devices and III-V devices formed on a silicon substrate Nov. 16, 2010
7829405 Lateral bipolar transistor with compensated well regions Nov. 9, 2010
7825475 Mixed voltage tolerant input/output electrostatic discharge devices Nov. 2, 2010
7795637 ESD protection circuit Sep. 14, 2010
7786532 Structure of a high breakdown voltage element for use in high power application Aug. 31, 2010
7772060 Integrated SiGe NMOS and PMOS transistors Aug. 10, 2010
7759731 Lateral trench MOSFET with direct trench polysilicon contact and method of forming the same Jul. 20, 2010
7755106 Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode Jul. 13, 2010
7723803 Bipolar device compatible with CMOS process technology May. 25, 2010
7718486 Structures and methods for fabricating vertically integrated HBT-FET device May. 18, 2010
7700423 Process for manufacturing epitaxial wafers for integrated devices on a common compound semiconductor III-V wafer Apr. 20, 2010
7692214 Semiconductor device having IGBT cell and diode cell and method for designing the same Apr. 6, 2010
7682919 Semiconductor process and PMOS varactor Mar. 23, 2010
7674681 Semiconductor device and method for manufacturing the same Mar. 9, 2010

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