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Class Information
Number: 257/E27.01
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or including integrated passive circuit elements (epo) > With semiconductor substrate only (epo)
Description: This subclass is indented under subclass E27.009. This subclass is substantially the same in scope as ECLA classification H01L27/04.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7589393 |
Semiconductor structure of a high side driver for two high voltage nodes with partially linked deep wells and method for manufacturing the same |
Sep. 15, 2009 |
| 7494837 |
Thin film forming apparatus |
Feb. 24, 2009 |
| 7345368 |
Semiconductor device and the manufacturing method for the same |
Mar. 18, 2008 |
| 7319263 |
Semiconductor component with switching element configured to reduce parasitic current flow |
Jan. 15, 2008 |
| 7196397 |
Termination design with multiple spiral trench rings |
Mar. 27, 2007 |
| 7180144 |
Corner compensation method for fabricating MEMS and structure thereof |
Feb. 20, 2007 |
| 7075150 |
Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique |
Jul. 11, 2006 |
| 6617661 |
High voltage component and method for making same |
Sep. 9, 2003 |
| 6563159 |
Substrate of semiconductor integrated circuit |
May. 13, 2003 |
| 6509605 |
Flash memory cell having a flexible element |
Jan. 21, 2003 |
| 5754009 |
Low cost system for effecting high density interconnection between integrated circuit devices |
May. 19, 1998 |
| 5413942 |
Monolithic electronic structures |
May. 9, 1995 |
| 4828629 |
Process of fabricating silicon oxide and gettering films on polycrystalline silicon resistance element |
May. 9, 1989 |
| 4826781 |
Semiconductor device and method of preparation |
May. 2, 1989 |
| 4743953 |
Random access memory cell with MIS capacitor having insulator of oxide of doped metal |
May. 10, 1988 |
| 4737902 |
Inner potential generating circuit |
Apr. 12, 1988 |
| 4714842 |
Integrated injection logic circuits |
Dec. 22, 1987 |
| 4443812 |
High-breakdown-voltage semiconductor device |
Apr. 17, 1984 |
| 4430623 |
Monolithic amplifier comprising a power division and recombination system grouping a plurality of transistors |
Feb. 7, 1984 |
| 4415816 |
Monolithically integrated circuit for the production of long pulses |
Nov. 15, 1983 |
| 4339672 |
Delay circuit constituted by MISFETs |
Jul. 13, 1982 |
| 4286177 |
Integrated injection logic circuits |
Aug. 25, 1981 |
| 4266151 |
Semiconductor circuit with at least two field effect transistors united in a semiconductor crystal |
May. 5, 1981 |
| 4260909 |
Back gate bias voltage generator circuit |
Apr. 7, 1981 |
| 4115711 |
Threshold circuit with hysteresis |
Sep. 19, 1978 |
| 4092552 |
Bipolar monolithic integrated push-pull power stage for digital signals |
May. 30, 1978 |
| 4080577 |
Semiconductor integrated circuit |
Mar. 21, 1978 |
| 4078208 |
Linear amplifier circuit with integrated current injector |
Mar. 7, 1978 |
| 4056810 |
Integrated injection logic memory circuit |
Nov. 1, 1977 |
| 4013979 |
CMOS oscillator with first and second MOS transistors of opposed type integrated on the same substrate |
Mar. 22, 1977 |
| 4005342 |
Integrated circuit overvoltage protection circuit |
Jan. 25, 1977 |
| 3990098 |
Structure capable of forming a diode and associated conductive path |
Nov. 2, 1976 |
| 3974404 |
Integrated circuit interface stage for high noise environment |
Aug. 10, 1976 |
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