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Class Information
Number: 257/E27.004
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) > Including solid state component for rectifying, amplifying, or switching without a potential barrier or surface barrier (epo)
Description: This subclass is indented under subclass E27.001. This subclass is substantially the same in scope as ECLA classification H01L27/24.

Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8711613 Non-volatile flash-RAM memory with magnetic memory Apr. 29, 2014
8704271 Bidirectional electrostatic discharge (ESD) protection Apr. 22, 2014
8637342 Phase change memory with threshold switch select device Jan. 28, 2014
8624218 Non-volatile memory structure and method for fabricating the same Jan. 7, 2014
8610099 Planar resistive memory integration Dec. 17, 2013
8569881 Semiconductor device Oct. 29, 2013
8569172 Noble metal/non-noble metal electrode for RRAM applications Oct. 29, 2013
8563961 Semiconductor storage device and method for manufacturing same Oct. 22, 2013
8563960 Phase change random access memory and method for manufacturing the same Oct. 22, 2013
8536058 Method of growing electrical conductors Sep. 17, 2013
8486752 Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devices Jul. 16, 2013
8481348 Phase change memory and method for fabricating the same Jul. 9, 2013
8482094 Semiconductor device and method for fabricating the same Jul. 9, 2013
8476686 Memory device and method for making same Jul. 2, 2013
8468692 Method of manufacturing a variable resistance memory device Jun. 25, 2013
8445354 Methods for manufacturing a phase-change memory device May. 21, 2013
8435830 Methods of fabricating semiconductor devices May. 7, 2013
8431922 Lateral phase change memory Apr. 30, 2013
8410607 Semiconductor memory structures Apr. 2, 2013
8399908 Programmable metallization memory cells via selective channel forming Mar. 19, 2013
8338224 Resistance-type random access memory device having three-dimensional bit line and word line patterning Dec. 25, 2012
8334165 Programmable metallization memory cells via selective channel forming Dec. 18, 2012
8320173 Methods of forming programmed memory cells Nov. 27, 2012
8293600 Thermally stabilized electrode structure Oct. 23, 2012
8293650 Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the same Oct. 23, 2012
8294134 Phase change memory devices having a current increase unit Oct. 23, 2012
8236623 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same Aug. 7, 2012
8211742 Lateral phase change memory Jul. 3, 2012
8207519 Ionic-modulated dopant profile control in nanoscale switching devices Jun. 26, 2012
8207518 Information recording and reproducing device Jun. 26, 2012
8206995 Method for manufacturing a resistive switching memory device and devices obtained thereof Jun. 26, 2012
8207558 Semiconductor device, DC/DC converter and power supply Jun. 26, 2012
8189375 Methods of forming memory cells and methods of forming programmed memory cells May. 29, 2012
8169053 Resistive random access memories and methods of manufacturing the same May. 1, 2012
8153471 Method for forming a reduced active area in a phase change memory structure Apr. 10, 2012
8125056 Double trench rectifier Feb. 28, 2012
8111384 Method for measuring thermo-optically induced material phase-change response in a multiple layer thin film structure using visible and ultraviolet spectroscopy Feb. 7, 2012
8106375 Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator Jan. 31, 2012
8097872 Modifiable gate stack memory element Jan. 17, 2012
8097902 Programmable metallization memory cells via selective channel forming Jan. 17, 2012
8097903 Semiconductor memory device Jan. 17, 2012
8084842 Thermally stabilized electrode structure Dec. 27, 2011
8080817 Memory cells Dec. 20, 2011
8072035 Semiconductor device and method of manufacturing the same Dec. 6, 2011
8071396 Embedded phase-change memory and method of fabricating the same Dec. 6, 2011
8062923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method Nov. 22, 2011
8030129 Method of fabricating nonvolatile memory device Oct. 4, 2011
8030695 Structure and manufacturing method of semiconductor memory device Oct. 4, 2011
8008114 Phase change memory device and manufacturing method Aug. 30, 2011
8004033 High-density nonvolatile memory Aug. 23, 2011

1 2 3 4 5 6 7 8

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