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Class Information
Number: 257/E23.163
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Packaging, interconnects, and markings for semiconductor or other solid-state devices (epo) > Arrangements for conducting electric current within device in operation from one component to another, interconnections, e.g., wires, lead frames (epo) > Including external interconnections consisting of multilayer structure of conductive and insulating layers inseparably formed on semiconductor body (epo) > Characterized by materials (epo) > Conductive materials (epo) > Based on metals, e.g., alloys, metal silicides (epo) > Principal metal being refractory metal (epo)
Description: This subclass is indented under subclass E23.157. This subclass is substantially the same in scope as ECLA classification H01L23/532M1R.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8704232 Thin film transistor with increased doping regions Apr. 22, 2014
8679978 Method for forming a film including Zr, Hf or the like, and method for manufacturing a semiconductor device using the same Mar. 25, 2014
8633101 Semiconductor device and manufacturing method of semiconductor device Jan. 21, 2014
8617984 Tungsten metallization: structure and fabrication of same Dec. 31, 2013
8564129 Low resistivity contact Oct. 22, 2013
8564132 Tungsten metallization: structure and fabrication of same Oct. 22, 2013
8466553 Semiconductor device and semiconductor package having the same Jun. 18, 2013
8409985 Methods for growing low-resistivity tungsten for high aspect ratio and small features Apr. 2, 2013
8344511 Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloy Jan. 1, 2013
8056500 Thermal reactor with improved gas flow distribution Nov. 15, 2011
8022542 Semiconductor device having improved metal wiring Sep. 20, 2011
7999384 Top layers of metal for high performance IC's Aug. 16, 2011
7968455 Copper deposition for filling features in manufacture of microelectronic devices Jun. 28, 2011
7960832 Integrated circuit arrangement with layer stack Jun. 14, 2011
7955972 Methods for growing low-resistivity tungsten for high aspect ratio and small features Jun. 7, 2011
7875978 Metal line having a multi-layered diffusion layer in a semiconductor device and method for forming the same Jan. 25, 2011
7800105 Ga.sub.2O.sub.3 semiconductor device Sep. 21, 2010
7790616 Encapsulated silicidation for improved SiC processing and device yield Sep. 7, 2010
7589017 Methods for growing low-resistivity tungsten film Sep. 15, 2009
7557446 Semiconductor device and a fabrication process thereof Jul. 7, 2009
7554162 Thin film transistor substrate with low reflectance upper electrode Jun. 30, 2009
7545043 Device comprising multi-layered thin film having excellent adhesive strength and method for fabricating the same Jun. 9, 2009
7521802 Semiconductor device having a refractory metal containing film and method for manufacturing the same Apr. 21, 2009
7504731 Interconnect structure to reduce stress induced voiding effect Mar. 17, 2009
7435679 Alloyed underlayer for microelectronic interconnects Oct. 14, 2008
7391089 Semiconductor device and method of manufacturing the same Jun. 24, 2008
7385292 Top layers of metal for high performance IC's Jun. 10, 2008
7372160 Barrier film deposition over metal for reduction in metal dishing after CMP May. 13, 2008
7326652 Atomic layer deposition using photo-enhanced bond reconfiguration Feb. 5, 2008
7157798 Selective refractory metal and nitride capping Jan. 2, 2007
7122878 Method to fabricate high reliable metal capacitor within copper back-end process Oct. 17, 2006
7115996 Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped Oct. 3, 2006
6911381 Boron incorporated diffusion barrier material Jun. 28, 2005
6906547 Conductive material for integrated circuit fabrication Jun. 14, 2005
6870380 Conductive material for integrated circuit fabrication Mar. 22, 2005
6861030 Method of manufacturing high purity zirconium and hafnium Mar. 1, 2005
6844601 Local interconnect structure for integrated circuit devices, source structure for the same, and method for fabricating the same Jan. 18, 2005
6833282 Method of forming an optical sensor device having a composite sandwich structure of alternating titanium and titanium nitride layers Dec. 21, 2004
6787914 Tungsten-based interconnect that utilizes thin titanium nitride layer Sep. 7, 2004
6784549 Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum Aug. 31, 2004
6781365 Conductive material for integrated circuit fabrication Aug. 24, 2004
6765398 Conductive material for integrated circuit fabrication Jul. 20, 2004
6720657 Semiconductor device and method of manufacturing the same Apr. 13, 2004
6699781 Conductive material for integrated circuit fabrication Mar. 2, 2004
6670267 Formation of tungstein-based interconnect using thin physically vapor deposited titanium nitride layer Dec. 30, 2003
6646456 Conductive material for integrated circuit fabrication Nov. 11, 2003
6639319 Conductive structure in an integrated circuit Oct. 28, 2003
6638852 Structure and method for preventing barrier failure Oct. 28, 2003
6635939 Boron incorporated diffusion barrier material Oct. 21, 2003
6630391 Boron incorporated diffusion barrier material Oct. 7, 2003

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