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Class Information
Number: 257/E23.16
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Packaging, interconnects, and markings for semiconductor or other solid-state devices (epo) > Arrangements for conducting electric current within device in operation from one component to another, interconnections, e.g., wires, lead frames (epo) > Including external interconnections consisting of multilayer structure of conductive and insulating layers inseparably formed on semiconductor body (epo) > Characterized by materials (epo) > Conductive materials (epo) > Based on metals, e.g., alloys, metal silicides (epo) > Principal metal being aluminum (epo) > Additional layers associated with aluminum layers, e.g., adhesion, barrier, cladding layers (epo)
Description: This subclass is indented under subclass E23.158. This subclass is substantially the same in scope as ECLA classification H01L23/532M1A4.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
8685851 MOS device with memory function and manufacturing method thereof Apr. 1, 2014
8680599 Semiconductor device and method of manufacturing the same Mar. 25, 2014
8653664 Barrier layers for copper interconnect Feb. 18, 2014
8558381 Semiconductor device Oct. 15, 2013
8524512 Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method Sep. 3, 2013
8461682 Ruthenium silicide diffusion barrier layers and methods of forming same Jun. 11, 2013
8441112 Method of manufacturing layered chip package May. 14, 2013
8384221 Semiconductor device, LED head and method of manufacturing the same Feb. 26, 2013
8368218 Adhesive flexible barrier film, method of forming same, and organic electronic device including same Feb. 5, 2013
8159069 Metal line of semiconductor device without production of high resistance compound due to metal diffusion and method for forming the same Apr. 17, 2012
8106512 Low resistance high reliability contact via and metal line structure for semiconductor device Jan. 31, 2012
7964967 High surface area aluminum bond pad for through-wafer connections to an electronic package Jun. 21, 2011
7944053 Semiconductor device and method of manufacturing the same May. 17, 2011
7928570 Interconnect structure Apr. 19, 2011
7902682 Ultraviolet energy curable tape and method of making a semiconductor chip using the tape Mar. 8, 2011
7875976 Semiconductor device including a silicide layer and a dielectric layer Jan. 25, 2011
7872351 Multi-layered metal line of semiconductor device for preventing diffusion between metal lines and method for forming the same Jan. 18, 2011
7867917 Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity Jan. 11, 2011
7855456 Metal line of semiconductor device without production of high resistance compound due to metal diffusion and method for forming the same Dec. 21, 2010
7820490 Method for LTCC circuitry Oct. 26, 2010
7812452 Semiconductor device having barrier layer comprised of dissimilar materials, and method for fabricating the same Oct. 12, 2010
7795135 Method for producing a layer arrangement Sep. 14, 2010
7777336 Metal line of semiconductor device and method for forming the same Aug. 17, 2010
7768119 Carrier structure embedded with semiconductor chip Aug. 3, 2010
7759796 Semiconductor device with two barrier layers formed between copper-containing line layer and aluminum-containing conductive layer Jul. 20, 2010
7741714 Bond pad structure with stress-buffering layer capping interconnection metal layer Jun. 22, 2010
7704885 Semiconductor device and method for fabricating the same Apr. 27, 2010
7638877 Alternative to desmear for build-up roughening and copper adhesion promotion Dec. 29, 2009
7638425 Metal line of semiconductor device having a diffusion barrier including CR.sub.xB.sub.y and method for forming the same Dec. 29, 2009
7626264 Substrate for device bonding and method for manufacturing same Dec. 1, 2009
7560815 Device structures including ruthenium silicide diffusion barrier layers Jul. 14, 2009
7560814 Semiconductor device that improves electrical connection reliability Jul. 14, 2009
7514359 Adhering layers to metals with dielectric adhesive layers Apr. 7, 2009
7485516 Method of ion implantation of nitrogen into semiconductor substrate prior to oxidation for offset spacer formation Feb. 3, 2009
7470992 Barrier layer stack to prevent Ti diffusion Dec. 30, 2008
7470986 Mounting structure, electro-optical device, and electronic apparatus Dec. 30, 2008
7449773 Microelectromechanical device packages with integral heaters Nov. 11, 2008
7411255 Dopant barrier for doped glass in memory devices Aug. 12, 2008
7405447 Silicon rich barrier layers for integrated circuit devices Jul. 29, 2008
7361991 Closed air gap interconnect structure Apr. 22, 2008
7282802 Modified via bottom structure for reliability enhancement Oct. 16, 2007
7268413 Bipolar transistors with low-resistance emitter contacts Sep. 11, 2007
7230338 Semiconductor device that improves electrical connection reliability Jun. 12, 2007
7211479 Silicon rich barrier layers for integrated circuit devices May. 1, 2007
7193326 Mold type semiconductor device Mar. 20, 2007
7187080 Semiconductor device with a conductive layer including a copper layer with a dopant Mar. 6, 2007
7183649 Methods and procedures for engineering of composite conductive films by atomic layer deposition Feb. 27, 2007
7157795 Composite tantalum nitride/tantalum copper capping layer Jan. 2, 2007
7148560 IC chip package structure and underfill process Dec. 12, 2006
7141880 Metal line stacking structure in semiconductor device and formation method thereof Nov. 28, 2006

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

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