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Class Information
Number: 257/E23.158
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Packaging, interconnects, and markings for semiconductor or other solid-state devices (epo) > Arrangements for conducting electric current within device in operation from one component to another, interconnections, e.g., wires, lead frames (epo) > Including external interconnections consisting of multilayer structure of conductive and insulating layers inseparably formed on semiconductor body (epo) > Characterized by materials (epo) > Conductive materials (epo) > Based on metals, e.g., alloys, metal silicides (epo) > Principal metal being aluminum (epo)
Description: This subclass is indented under subclass E23.157. This subclass is substantially the same in scope as ECLA classification H01L23/532M1A.

Sub-classes under this class:

Class Number Class Name Patents
257/E23.16 Additional layers associated with aluminum layers, e.g., adhesion, barrier, cladding layers (epo) 726
257/E23.159 Aluminum alloys (epo) 116

Patents under this class:
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Patent Number Title Of Patent Date Issued
8129844 Method of forming a metal silicide layer, devices incorporating metal silicide layers and design structures for the devices Mar. 6, 2012
8119518 Noble metal barrier for fluorine-doped carbon films Feb. 21, 2012
8004061 Conductive trace with reduced RF impedance resulting from the skin effect Aug. 23, 2011
7998793 Light illumination during wafer dicing to prevent aluminum corrosion Aug. 16, 2011
7855454 Semiconductor device structures including nickel plated aluminum, copper, and tungsten structures Dec. 21, 2010
6979882 Electronic device and method for manufacturing the same Dec. 27, 2005
6940094 Electronic device and method for manufacturing the same Sep. 6, 2005
6909188 Semiconductor device and manufacturing method thereof Jun. 21, 2005
6903014 Low temperature reflow method for filling high aspect ratio contacts Jun. 7, 2005
6844628 Electronic device and method for manufacturing the same Jan. 18, 2005
6727590 Semiconductor device with internal bonding pad Apr. 27, 2004
6677236 Semiconductor device fabrication method for interconnects that suppresses loss of interconnect metal Jan. 13, 2004
6657299 Semiconductor with a stress reduction layer and manufacturing method therefor Dec. 2, 2003
6597067 Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration Jul. 22, 2003
6534870 Apparatus and method for manufacturing a semiconductor device Mar. 18, 2003
6433428 Semiconductor device with a dual damascene type via contact structure and method for the manufacture of same Aug. 13, 2002
6383924 Method of forming buried conductor patterns by surface transformation of empty spaces in solid state materials May. 7, 2002
6361704 Self stop aluminum pad for copper process Mar. 26, 2002
6346749 Semiconductor device Feb. 12, 2002
6320262 Semiconductor device and manufacturing method thereof Nov. 20, 2001
5982040 Semiconductor device and method for manufacturing the same Nov. 9, 1999
5929527 Electronic device Jul. 27, 1999
5904557 Method for forming multilevel interconnection of semiconductor device May. 18, 1999
5661345 Semiconductor device having a single-crystal metal wiring Aug. 26, 1997
5641993 Semiconductor IC with multilayered Al wiring Jun. 24, 1997
5606203 Semiconductor device having Al-Cu wiring lines where Cu concentration is related to line width Feb. 25, 1997
5602424 Semiconductor circuit device wiring with F.C.C. structure, plane oriention (100) and aligned with the current direction Feb. 11, 1997
5518947 Method of forming a semiconductor memory device having silicon nitride overlying only in peripheral circuit area May. 21, 1996
5512779 Semiconductor memory device having silicon nitride overlying only peripheral circuit areas Apr. 30, 1996
5470788 Method of making self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration Nov. 28, 1995
5448113 Micro metal-wiring structure having stress induced migration resistance Sep. 5, 1995
5428251 Multi-layer wiring structure having continuous grain boundaries Jun. 27, 1995
5409862 Method for making aluminum single crystal interconnections on insulators Apr. 25, 1995
5407863 Method of manufacturing semiconductor device Apr. 18, 1995
5382831 Integrated circuit metal film interconnect having enhanced resistance to electromigration Jan. 17, 1995
5378653 Method of forming aluminum based pattern Jan. 3, 1995
5300307 Microstructure control of Al-Cu films for improved electromigration resistance Apr. 5, 1994
5266521 Method for forming a planarized composite metal layer in a semiconductor device Nov. 30, 1993
5262361 Via filling by single crystal aluminum Nov. 16, 1993
5233135 Interconnect for integrated circuits Aug. 3, 1993
5208187 Metal film forming method May. 4, 1993
5101261 Electronic circuit device with electronomigration-resistant metal conductors Mar. 31, 1992
5001541 Advanced electromigration resistant interconnect structure and process Mar. 19, 1991
4989064 Aluminum alloy line resistive to stress migration formed in semiconductor integrated circuit Jan. 29, 1991
4976809 Method of forming an aluminum conductor with highly oriented grain structure Dec. 11, 1990
4923526 Homogeneous fine grained metal film on substrate and manufacturing method thereof May. 8, 1990
4922320 Integrated circuit metallization with reduced electromigration May. 1, 1990
4891112 Sputtering method for reducing hillocking in aluminum layers formed on substrates Jan. 2, 1990
4744858 Integrated circuit metallization with reduced electromigration May. 17, 1988
4734754 Semiconductor device having improved structure of multi-wiring layers Mar. 29, 1988

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