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Class Information
Number: 257/E23.157
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Packaging, interconnects, and markings for semiconductor or other solid-state devices (epo) > Arrangements for conducting electric current within device in operation from one component to another, interconnections, e.g., wires, lead frames (epo) > Including external interconnections consisting of multilayer structure of conductive and insulating layers inseparably formed on semiconductor body (epo) > Characterized by materials (epo) > Conductive materials (epo) > Based on metals, e.g., alloys, metal silicides (epo)
Description: This subclass is indented under subclass E23.155. This subclass is substantially the same in scope as ECLA classification H01L23/532M1.

Sub-classes under this class:

Class Number Class Name Patents
257/E23.158 Principal metal being aluminum (epo) 54
257/E23.161 Principal metal being copper (epo) 230
257/E23.162 Principal metal being noble metal, e.g., gold (epo) 150
257/E23.163 Principal metal being refractory metal (epo) 224

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8513122 Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor Aug. 20, 2013
8492899 Method to electrodeposit nickel on silicon for forming controllable nickel silicide Jul. 23, 2013
8482076 Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor Jul. 9, 2013
8456007 Chemical vapor deposition of titanium Jun. 4, 2013
8456011 Method to control metal semiconductor micro-structure Jun. 4, 2013
8405091 Display device and method of manufacturing the same Mar. 26, 2013
8378485 Solder interconnect by addition of copper Feb. 19, 2013
8362570 Method for making complementary P and N MOSFET transistors, electronic device including such transistors, and processor including at least one such device Jan. 29, 2013
8349730 Transitional interface between metal and dielectric in interconnect structures Jan. 8, 2013
8344511 Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloy Jan. 1, 2013
8309993 Pixel of image sensor and method for fabricating the same Nov. 13, 2012
8304841 Metal gate transistor, integrated circuits, systems, and fabrication methods thereof Nov. 6, 2012
8258627 Group II element alloys for protecting metal interconnects Sep. 4, 2012
8242599 Electronic component with diffusion barrier layer Aug. 14, 2012
8242602 Composite solder TIM for electronic package Aug. 14, 2012
8168538 Buried silicide structure and method for making May. 1, 2012
8129844 Method of forming a metal silicide layer, devices incorporating metal silicide layers and design structures for the devices Mar. 6, 2012
8076778 Method for preventing Al-Cu bottom damage using TiN liner Dec. 13, 2011
8049334 Buried silicide local interconnect with sidewall spacers and method for making the same Nov. 1, 2011
7999382 Semiconductor device and fabrication method for the same Aug. 16, 2011
7989344 Method for forming a nickelsilicide FUSI gate Aug. 2, 2011
7960832 Integrated circuit arrangement with layer stack Jun. 14, 2011
7956464 Sputtering target and semiconductor device manufactured using the same Jun. 7, 2011
7888808 System in package integrating a plurality of semiconductor chips Feb. 15, 2011
7875939 Semiconductor device including an ohmic layer Jan. 25, 2011
7875976 Semiconductor device including a silicide layer and a dielectric layer Jan. 25, 2011
7858518 Method for forming a selective contact and local interconnect in situ Dec. 28, 2010
7800186 Semiconductor device and method of fabricating metal gate of the same Sep. 21, 2010
7777344 Transitional interface between metal and dielectric in interconnect structures Aug. 17, 2010
7714440 Metal interconnection structure of a semiconductor device having low resistance and method of fabricating the same May. 11, 2010
7585762 Vapor deposition processes for tantalum carbide nitride materials Sep. 8, 2009
7449782 Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby Nov. 11, 2008
7435679 Alloyed underlayer for microelectronic interconnects Oct. 14, 2008
7425765 Zinc-aluminum solder alloy Sep. 16, 2008
7411300 Agglomeration control using early transition metal alloys Aug. 12, 2008
7400042 Substrate with adhesive bonding metallization with diffusion barrier Jul. 15, 2008
7358574 Semiconductor device having silicide-blocking layer and fabrication method thereof Apr. 15, 2008
7326652 Atomic layer deposition using photo-enhanced bond reconfiguration Feb. 5, 2008
7132352 Method of eliminating source/drain junction spiking, and device produced thereby Nov. 7, 2006
6906547 Conductive material for integrated circuit fabrication Jun. 14, 2005
6870380 Conductive material for integrated circuit fabrication Mar. 22, 2005
6864584 Semiconductor device Mar. 8, 2005
6838769 Dual damascene bond pad structure for lowering stress and allowing circuitry under pads Jan. 4, 2005
6781365 Conductive material for integrated circuit fabrication Aug. 24, 2004
6765398 Conductive material for integrated circuit fabrication Jul. 20, 2004
6699781 Conductive material for integrated circuit fabrication Mar. 2, 2004
6646456 Conductive material for integrated circuit fabrication Nov. 11, 2003
6630688 Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same Oct. 7, 2003
6624514 Semiconductor device and manufacturing method thereof Sep. 23, 2003
6593653 Low leakage current silicon carbonitride prepared using methane, ammonia and silane for copper diffusion barrier, etchstop and passivation applications Jul. 15, 2003

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