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Class Information
Number: 257/E23.122
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Packaging, interconnects, and markings for semiconductor or other solid-state devices (epo) > Encapsulations, e.g., encapsulating layers, coatings, e.g., for protection (epo) > Characterized by material, e.g., carbon (epo) > Semiconductor material, e.g., amorphous silicon (epo)
Description: This subclass is indented under subclass E23.117. This subclass is substantially the same in scope as ECLA classification H01L23/29S.

Patents under this class:

Patent Number Title Of Patent Date Issued
7960256 Use of CL2 and/or HCL during silicon epitaxial film formation Jun. 14, 2011
7790582 Method for fabricating polysilicon liquid crystal display device Sep. 7, 2010
7759151 Solid state imaging apparatus, imaging apparatus and solid state imaging apparatus manufacturing method Jul. 20, 2010
7750351 Epitaxial substrate for field effect transistor Jul. 6, 2010
7550778 System and method for providing access to an encapsulated device Jun. 23, 2009
7397063 Semiconductor device Jul. 8, 2008
7081400 Method for manufacturing polysilicon layer and method for manufacturing thin film transistor thereby Jul. 25, 2006
5602056 Method for forming reliable MOS devices using silicon rich plasma oxide film Feb. 11, 1997
5543360 Method of making a semiconductor device with sidewall etch stopper and wide through-hole having multilayered wiring structure Aug. 6, 1996
5539248 Semiconductor device with improved insulating/passivating layer of indium gallium fluoride (InGaF) Jul. 23, 1996
5492865 Method of making structure for suppression of field inversion caused by charge build-up in the dielectric Feb. 20, 1996
5483097 Device protecting layer Jan. 9, 1996
5462893 Method of making a semiconductor device with sidewall etch stopper and wide through-hole having multilayered wiring structure Oct. 31, 1995
5374833 Structure for suppression of field inversion caused by charge build-up in the dielectric Dec. 20, 1994
5290727 Method for suppressing charge loss in EEPROMs/EPROMS and instabilities in SRAM load resistors Mar. 1, 1994
5238850 Bi-MOS type semiconductor integrated circuit device having high-frequency characteristics and method of making the same Aug. 24, 1993
5187558 Stress reduction structure for a resin sealed semiconductor device Feb. 16, 1993
5162875 Protective layer for electroactive passivation layers Nov. 10, 1992
5156909 Thick, low-stress films, and coated substrates formed therefrom, and methods for making same Oct. 20, 1992
5144406 Diode devices and active matrix addressed display devices incorporating them Sep. 1, 1992
5087959 Protective coating useful as a passivation layer for semiconductor devices Feb. 11, 1992
5047833 Solderable front metal contact for MOS devices Sep. 10, 1991
4972250 Protective coating useful as passivation layer for semiconductor devices Nov. 20, 1990
4901133 Multilayer semi-insulating film for hermetic wafer passivation and method for making same Feb. 13, 1990
4888306 Method of manufacturing a bipolar transistor Dec. 19, 1989
4824716 Impermeable encapsulation system for integrated circuits Apr. 25, 1989
4742384 Structure for passivating a PN junction May. 3, 1988
4597825 Intermediate passivation and cleaning of compound semiconductor surfaces Jul. 1, 1986
4473597 Method and structure for passivating a PN junction Sep. 25, 1984
4420765 Multi-layer passivant system Dec. 13, 1983
4375125 Method of passivating pn-junction in a semiconductor device Mar. 1, 1983
4362766 Method for preparing a protective amorphous silicon passivating film on a semiconductor device Dec. 7, 1982
4332837 Passivation process and structure for self-alignment with the location of a mask Jun. 1, 1982
4331709 Process of reducing density of fast surface states in MOS devices May. 25, 1982
4322452 Process for passivating semiconductor members Mar. 30, 1982
4262299 Semiconductor-on-insulator device and method for its manufacture Apr. 14, 1981
4254426 Method and structure for passivating semiconductor material Mar. 3, 1981
4224084 Method and structure for passivating a semiconductor device Sep. 23, 1980
4176372 Semiconductor device having oxygen doped polycrystalline passivation layer Nov. 27, 1979
4134125 Passivation of metallized semiconductor substrates Jan. 9, 1979
4086613 Semiconductor device having a passivated surface and method of manufacturing the device Apr. 25, 1978
4062034 Semiconductor device having a hetero junction Dec. 6, 1977

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