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Class Information
Number: 257/E23.019
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Packaging, interconnects, and markings for semiconductor or other solid-state devices (epo) > Arrangements for conducting electric current to or from solid-state body in operation, e.g., leads, terminal arrangements (epo) > Consisting of lead-in layers inseparably applied to semiconductor body (epo) > Consisting of layered constructions comprising conductive layers and insulating layers, e.g., planar contacts (epo)
Description: This subclass is indented under subclass E23.012. This subclass is substantially the same in scope as ECLA classification H01L23/485.

Sub-classes under this class:

Class Number Class Name Patents
257/E23.02 Bonding areas, e.g., pads (epo) 1,264
257/E23.021 Bump or ball contacts (epo) 2,068
257/E23.022 Overhang structure (epo) 39

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
6351025 Semiconductor chip having an underplate metal layer Feb. 26, 2002
6348709 Electrical contact for high dielectric constant capacitors and method for fabricating the same Feb. 19, 2002
6348409 Self aligned contact plug technology Feb. 19, 2002
6344410 Manufacturing method for semiconductor metalization barrier Feb. 5, 2002
6342415 Method and system for providing reduced-sized contacts in a semiconductor device Jan. 29, 2002
6333547 Semiconductor device and method of manufacturing the same Dec. 25, 2001
6333233 Semiconductor device with self-aligned contact and its manufacture Dec. 25, 2001
6326287 Semiconductor device and method of fabricating the same Dec. 4, 2001
6323558 Method for fabricating a contact of a semiconductor device Nov. 27, 2001
6320261 High aspect ratio metallization structures for shallow junction devices, and methods of forming the same Nov. 20, 2001
6320240 Semiconductor device and method of manufacturing the same Nov. 20, 2001
6319825 Metallization process of semiconductor device Nov. 20, 2001
6316835 Method for forming zig-zag bordered openings in semiconductor structures and structures formed Nov. 13, 2001
6316360 High aspect ratio metallization structures for shallow junction devices, and methods of forming the same Nov. 13, 2001
6313027 Method for low thermal budget metal filling and planarization of contacts vias and trenches Nov. 6, 2001
6312830 Method and an apparatus for forming an under bump metallization structure Nov. 6, 2001
6309967 Method of forming a contact Oct. 30, 2001
6307226 Contact openings to electronic components having recessed sidewall structures Oct. 23, 2001
6307263 Integrated semiconductor chip with modular dummy structures Oct. 23, 2001
6307261 Method for the manufacturing of a semiconductor device which comprises at least one chip and corresponding device Oct. 23, 2001
6303493 Wiring for semiconductor device and method for forming the same Oct. 16, 2001
6297532 Semiconductor device and method of manufacturing the same Oct. 2, 2001
6294451 Semiconductor device and method for manufacturing the same Sep. 25, 2001
6294835 Self-aligned composite insulator with sub-half-micron multilevel high density electrical interconnections and process thereof Sep. 25, 2001
6291333 Method of fabricating dual damascene structure Sep. 18, 2001
6291344 Integrated circuit with improved contact barrier Sep. 18, 2001
6291890 Semiconductor device having a silicide structure Sep. 18, 2001
6287958 Method of manufacturing a self-aligned etch stop for polycrystalline silicon plugs on a semiconductor device Sep. 11, 2001
6287963 Method for forming a metal contact Sep. 11, 2001
6284651 Method for forming a contact having a diffusion barrier Sep. 4, 2001
6285038 Integrated circuitry and DRAM integrated circuitry Sep. 4, 2001
6281083 Methods of forming field effect transistor gates, and methods of forming integrated circuitry Aug. 28, 2001
6281051 Semiconductor device and manufacturing method thereof Aug. 28, 2001
6278189 High density integrated circuits using tapered and self-aligned contacts Aug. 21, 2001
6277731 Method for forming a semiconductor connection with a top surface having an enlarged recess Aug. 21, 2001
6271126 Method of forming contact openings Aug. 7, 2001
6271469 Direct build-up layer on an encapsulated die package Aug. 7, 2001
6271137 Method of producing an aluminum stacked contact/via for multilayer Aug. 7, 2001
6268284 In situ titanium aluminide deposit in high aspect ratio features Jul. 31, 2001
6268655 Semiconductor device including edge bond pads and methods Jul. 31, 2001
6268658 Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof Jul. 31, 2001
6261948 Method of forming contact openings Jul. 17, 2001
6255212 Method of making a void-free aluminum film Jul. 3, 2001
6255192 Methods for barrier layer formation Jul. 3, 2001
6255686 Semiconductor storage device including short circuit avoiding structure and method of fabricating thereof Jul. 3, 2001
6249015 Semiconductor device and fabrication method thereof Jun. 19, 2001
6245661 Method of producing a wiring for a semiconductor circuit Jun. 12, 2001
6242807 Semiconductor integrated circuit having heat sinking means for heat generating wires Jun. 5, 2001
6242811 Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature Jun. 5, 2001
6238533 Integrated PVD system for aluminum hole filling using ionized metal adhesion layer May. 29, 2001

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

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