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Class Information
Number: 257/E23.019
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Packaging, interconnects, and markings for semiconductor or other solid-state devices (epo) > Arrangements for conducting electric current to or from solid-state body in operation, e.g., leads, terminal arrangements (epo) > Consisting of lead-in layers inseparably applied to semiconductor body (epo) > Consisting of layered constructions comprising conductive layers and insulating layers, e.g., planar contacts (epo)
Description: This subclass is indented under subclass E23.012. This subclass is substantially the same in scope as ECLA classification H01L23/485.










Sub-classes under this class:

Class Number Class Name Patents
257/E23.02 Bonding areas, e.g., pads (epo) 1,264
257/E23.021 Bump or ball contacts (epo) 2,068
257/E23.022 Overhang structure (epo) 39


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
6130482 Semiconductor device and method for fabricating the same Oct. 10, 2000
6127265 Method of manufacturing a semiconductor device with a stacked via Oct. 3, 2000
6127734 Semiconductor device comprising a contact hole of varying width thru multiple insulating layers Oct. 3, 2000
6117768 Void-free tungsten-plug contact for ULSI interconnection Sep. 12, 2000
6114244 Method for manufacturing a semiconductor device having fine contact hole with high aspect ratio Sep. 5, 2000
6107196 Integrated circuit, and method for forming an integrated circuit Aug. 22, 2000
6107170 Silicon sensor contact with platinum silicide, titanium/tungsten and gold Aug. 22, 2000
6096572 Manufacturing method and semiconductor device with low contact resistance between transparent electrode and pad electrode Aug. 1, 2000
6093641 Method for fabricating semiconductor device with an increased process tolerance Jul. 25, 2000
6093642 Tungsten-nitride for contact barrier application Jul. 25, 2000
6093963 Dual landing pad structure including dielectric pocket Jul. 25, 2000
6090700 Metallization method for forming interconnects in an integrated circuit Jul. 18, 2000
6090672 Ultra short channel damascene MOS transistors Jul. 18, 2000
6087727 Misfet semiconductor device having different vertical levels Jul. 11, 2000
6084302 Barrier layer cladding around copper interconnect lines Jul. 4, 2000
6072241 Semiconductor device with self-aligned contact and its manufacture Jun. 6, 2000
6071785 Low resistance ground wiring in a semiconductor device Jun. 6, 2000
6071812 Method of forming a modified metal contact opening to decrease its aspect ratio for deep sub-micron processes Jun. 6, 2000
6066894 Semiconductor device and a method of manufacturing the same May. 23, 2000
6066559 Method for forming a semiconductor connection with a top surface having an enlarged recess May. 23, 2000
6064099 Layout of well contacts and source contacts of a semiconductor device May. 16, 2000
6060766 Protection of hydrogen sensitive regions in semiconductor devices from the positive charge associated with plasma deposited barriers or layers May. 9, 2000
6060783 Self-aligned contact plugs May. 9, 2000
6057229 Method for metallizing submicron contact holes in semiconductor bodies May. 2, 2000
6057231 Method for improved metal fill by treatment of mobility layers May. 2, 2000
6057232 Wiring structure for semiconductor device and fabrication method therefor May. 2, 2000
6057604 Integrated circuit contact structure having gate electrode protection for self-aligned contacts with zero enclosure May. 2, 2000
6054768 Metal fill by treatment of mobility layers Apr. 25, 2000
6054770 Electric solid state device and method for manufacturing the device Apr. 25, 2000
6051883 Manufacturing method and semiconductor device with low contact resistance between transparent electrode and pad electrode Apr. 18, 2000
6051490 Method of forming wirings Apr. 18, 2000
6045892 Metal wiring structures for integrated circuits including seed layer Apr. 4, 2000
6045666 Aluminum hole filling method using ionized metal adhesion layer Apr. 4, 2000
6040242 Method of manufacturing a contact plug Mar. 21, 2000
6037252 Method of titanium nitride contact plug formation Mar. 14, 2000
6037261 Semiconductor processing method of making electrical contact to a node received within a mass of insulating dielectric material Mar. 14, 2000
6034401 Local interconnection process for preventing dopant cross diffusion in shared gate electrodes Mar. 7, 2000
6030894 Method for manufacturing a semiconductor device having contact plug made of Si/SiGe/Si Feb. 29, 2000
6031288 Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof Feb. 29, 2000
6028362 Damascene wiring with flat surface Feb. 22, 2000
6025265 Method of forming a landing pad structure in an integrated circuit Feb. 15, 2000
6025634 Integrated circuit having formed therein low contact leakage and low contact resistance integrated circuit device electrode Feb. 15, 2000
6025645 Semiconductor device and method of manufacturing the same Feb. 15, 2000
6023095 Semiconductor device and manufacture method thereof Feb. 8, 2000
6022798 Method of forming an interconnect using thin films of Ti and TiN Feb. 8, 2000
6020266 Single step electroplating process for interconnect via fill and metal line patterning Feb. 1, 2000
6020642 Interconnection system in a semiconductor device Feb. 1, 2000
6018195 MOS gate structure semiconductor device Jan. 25, 2000
6018185 Semiconductor device with element isolation film Jan. 25, 2000
6017813 Method for fabricating a damascene landing pad Jan. 25, 2000

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